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Label-free Detection of Antibody-Antigen Interaction by Si Nanowire MOSFET
홍남경,이형구,이민수,강인철 한국바이오칩학회 2008 BioChip Journal Vol.2 No.4
We have fabricated Si nanowire transistors for protein detection using an SOI wafer and ultra-thin hafnium oxides as a gate dielectric. When a self-assembled monolayer is formed using a ProLinker on the gate dielectrics, the conductance of a transistor increases, and further attachment of hIgG protein on the surface does not noticeably change the conductance. By contrast, additional immobilization of antihIgG protein over the hIgG has reduced the conductance by antibody-antigen interaction and has exhibited the largest conductance change. These results confirm that this device has recognized a specific protein reaction through direct electrical detection.
Botulinum Toxin Type A Injection for Neuropathic Pain in a Patient With a Brain Tumor: A Case Report
남경은,김준성,홍보영,설보미,최혜훈,전소연,임성훈 대한재활의학회 2017 Annals of Rehabilitation Medicine Vol.41 No.6
Neuropathic pain is usually managed pharmacologically, rather than with botulinum toxin type A (BTX-A). However, medications commonly fail to relieve pain effectively or have intolerable side effects. We present the case of a 62-year-old man diagnosed with an intracranial chondrosarcoma, which was removed surgically and treated with radiation therapy. He suffered from neuropathic pain despite combined pharmacological therapy with gabapentin, amitriptyline, tramadol, diazepam, and duloxetine because of adverse effects. BTX-A (100 units) was injected subcutaneously in the most painful area in the posterior left thigh. Immediately after the injection, his pain decreased significantly from 6/10 to 2/10 on a visual analogue scale. Pain relief lasted for 12 weeks. This case report describes intractable neuropathic pain caused by a brain tumor that was treated with subcutaneous BTX-A, which is a useful addition for the management of neuropathic pain related to a brain tumor.
河萬景,洪淳翼,金南京 釜山工業大學校 1993 論文集 Vol.35 No.-
Grinding is one of thee major precise cutting processes which make rough surface into fine one, but it is difficult to estimate the effects because the grinding process which is affected by many factors is very complex. In order to raise the grinding effects without making worse the grinding quality by using grinding machine, grinding characteristics according to variable grinding conditions are observed. The purpose of this research is to suggest the theoretical guide for high effects and the critical value in grinding process, and clarify the sufficient grinding heat and dimensional errors by the experiment and the theory. The estimated results of thermal deformation are compared with measured profiles of ground surface. Main results to be obtained are as follows ; 1) In terms of grinding method, the down cut grinding method produces good grinding surface roughness in case of small grinding depth, otherwise, the up cut method in case of large grinding depth. 2) A grinding temperature and dimensional error by grinding machine with developed nozzle is decreased and these results obtain a good workpiece quality.
P3HT 유기물을 활성층으로 이용한 박막 트랜지스터 제작
이건웅,홍남경,권오성,이형규 충북대학교 컴퓨터정보통신 연구소 2005 컴퓨터정보통신연구 Vol.13 No.1
구동회로가 유기물로 구성된다면 단순하고 저렴한 제작공정의 장점으로 인해 두루마리 디스플레이, RFID 카드에 사용될 수 있다. 본 연구는 이를 위해 고분자 유기물인 P3HT(poly-3-hexylthiophene)를 산화막이 성장된 Si 기판위에 스핀코팅하여 활성층으로 사용한 박막 트랜지스터를 제작하고 소자 구조에 따른 특성을 측정하였다. 트랜지스터는 하부 게이트 전극으로 Si 기판을, 몰리브덴 소스와 드레인이 유기물 활성층 하부 또는 그 상부에 위치하는 구조를 채택하였다. 제작된 박막 트랜지스터는 정상전도 p-채널 MOSFET 동작특성을 보이며 V_(GS) = -60 V, V_(DS) = -100 V에서 측정한 드레인 전류는 하부, 상부 접촉 구조에서 각각 I_(DS) = 8 pA/㎛, 4.7 pA/㎛ 이었으며 점멸비 (I_(on/off))는 10^(2)과 10을 나타내었다. 또한, 계산된 전계 효과 이동도는 두 구조에서 동일한 값으로써 약 1×10^(-6) ㎠/V-s 을 보이고 있었다. 상부구조의 장점은 트랜지스터의 특성은 박막의 품질이 향상되고 낮은 접촉저항을 나타내는 금속을 선택함으로써 들어날 것으로 기대된다. If the driving circuits were formed by organic materials, these can be applicable to flexible displays and RFID cards due to the simple fabrication methods and inexpensive costs of production, In this article, we report on the characteristics of organic thin-film transistors using P3HT(poly-3-hexylthiophene) polymer as an active layer material by spin-coating on a Si wafer. The transistor is composed of a Si back-gate, 150 nm thick thermal oxide, and Mo source/drain contacts formed either below (bottom-contact) or above (top-contact) the active channel. Fabricated devices have exhibited the normally-on p-channel MOSFET characteristics with the drain currents of 8 pA/㎛ and 4.7 pA/㎛, and with I_(on/off) ratios of 10^(2) and 10, from bottom- and top-contact structure, respectively, measured at V_(GS) = -60 V and V_(DS) = -100 V. And, the calculated mobility shows about 1×10^(-6) ㎠/V-s same in both structures. We expect that the advantages of top-contact structure could be revealed by employing low contact resistance metal and improvement of the film quality.