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솔-젤법에 의한 Al-doped ZnO 투명전도막의 제조 및 특성
현승민,홍권,김병호,Hyun, Seung-Min,Hong, Kwon,Kim, Byong-Ho 한국세라믹학회 1996 한국세라믹학회지 Vol.33 No.2
ZnO and Al-doped ZnO thin films were prepared by sol-gel dip-coating method and electrical and optical properties of films were investigated. Using the zinc acetate dihydrate and acetylaceton(AcAc) as a chelating agent stable ZnO sol was synthesized with HCl catalyst. Adding aluminium chloride to the ZnO sol Al-doped ZnO sol could be also synthesized. As Al contents increase the crystallinity of ZnO thin film was retarded by increased compressive stress in the film resulted from the difference of ionic radius between Zn2+ and Al3+ The thickness of ZnO and Al-doped ZnO thin film was in the range of 2100~2350$\AA$. The resistivity of ZnO thin films was measured by Van der Pauw method. ZnO and Al-doped ZnO thin films with annealing temperature and Al content had the resistivity of 0.78~1.65$\Omega$cm and ZnO and Al-doped ZnO thin film post-annealed at 40$0^{\circ}C$ in vacuum(5$\times$10-5 torr) showed the resistivity of 2.28$\times$10-2$\Omega$cm. And the trans-mittance of ZnO and Al-doped ZnO thin film is in the range of 91-97% in visible range.
3차원 소자 집적을 위한 Cu-Cu 접합의 계면접착에너지에 미치는 후속 열처리의 영향
장은정,현승민,이학주,박영배,Jang, Eun-Jung,Pfeiffer, Sarah,Kim, Bi-Oh,Mtthias, Thorsten,Hyun, Seung-Min,Lee, Hak-Joo,Park, Young-Bae 한국재료학회 2008 한국재료학회지 Vol.18 No.4
$1.5\;{\mu}m$-thick copper films deposited on silicon wafers were successfully bonded at $415^{\circ}C$/25 kN for 40 minutes in a thermo-compression bonding method that did not involve a pre-cleaning or pre-annealing process. The original copper bonding interface disappeared and showed a homogeneous microstructure with few voids at the original bonding interface. Quantitative interfacial adhesion energies were greater than $10.4\;J/m^2$ as measured via a four-point bending test. Post-bonding annealing at a temperature that was less than $300^{\circ}C$ had only a slight effect on the bonding energy, whereas an oxygen environment significantly deteriorated the bonding energy over $400^{\circ}C$. This was most likely due to the fast growth of brittle interfacial oxides. Therefore, the annealing environment and temperature conditions greatly affect the interfacial bonding energy and reliability in Cu-Cu bonded wafer stacks.
Cu-Cu 열압착 웨이퍼 접합부의 계면접합강도에 미치는 $N_2+H_2$ 분위기 열처리의 영향
장은정,김재원,현승민,이학주,박영배,Jang, Eun-Jung,Kim, Jae-Won,Kim, Bioh,Matthias, Thorsten,Hyun, Seung-Min,Lee, Hak-Joo,Park, Young-Bae 한국마이크로전자및패키징학회 2009 마이크로전자 및 패키징학회지 Vol.16 No.3
3차원 소자 집적을 위한 저온접합 공정 개발을 위해 Cu-Cu 열 압착 접합을 $300^{\circ}C$에서 30분간 실시하고 $N_2+H_2$, $N_2$분위기에서 전 후속 열처리 효과에 따른 정량적인 계면접착에너지를 4점굽힘시험법을 통해 평가하였다. 전 열처리는 100, $200^{\circ}C$의 $N_2+H_2$ 가스 분위기에서 각각 15분간 처리하였고, 계면접착에너지는 2.58, 2.41, 2.79 $J/m^2$로 전 열처리 전 후에 따른 변화가 없었다. 하지만 250, $300^{\circ}C$의 $N_2$ 분위기에서 1시간씩 후속 열처리 결과 2.79, 8.87, 12.17 $J/m^2$으로 Cu 접합부의 계면접착에너지가 3배 이상 향상된 결과를 얻을 수 있었다. Cu-Cu thermo-compression bonding process was successfully developed as functions of the $N_2+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the quantitative interfacial adhesion energy was measured by 4-point bending test. While the pre-annealing with $N_2+H_2$ gas below $200^{\circ}C$ is not effective to improve the interfacial adhesion energy at bonding temperature of $300^{\circ}C$, the interfacial adhesion energy increased over 3 times due to post-annealing over $250^{\circ}C$ after bonding at $300^{\circ}C$, which is ascribed to the effective removal of native surface oxide after post-annealing treatment.
Cu 두께에 따른 Cu-Cu 열 압착 웨이퍼 접합부의 접합 특성 평가
김재원,정명혁,이학주,현승민,박영배,Kim, Jae-Won,Jeong, Myeong-Hyeok,Carmak, Erkan,Kim, Bioh,Matthias, Thorsten,Lee, Hak-Joo,Hyun, Seung-Min,Park, Young-Bae 한국마이크로전자및패키징학회 2010 마이크로전자 및 패키징학회지 Vol.17 No.4
3차원 TSV 접합 시접합 두께 및 전, 후 추가 공정 처리가 Cu-Cu 열 압착 접합에 미치는 영향을 알아보기 위해 0.25, 0.5, 1.5, 3.0 um 두께로 Cu 박막을 제작한 후 접합 전 $300^{\circ}C$에서 15분간 $Ar+H_2$, 분위기에서 열처리 후 $300^{\circ}C$에서 30분 접합 후 후속 열처리 효과를 실시하여 계면접착에너지를 4점굽힘 시험법을 통해 평가하였다. FIB 이미지 확인 결과 Cu 두께에 상관없이 열 압착 접합이 잘 이루어져 있었다. 계면접착에너지 역시 두께에 상관없이 $4.34{\pm}0.17J/m^2$ 값을 얻었으며, 파괴된 계면을 분석 한 결과 $Ta/SiO_2$의 약한 계면에서 파괴가 일어났음을 확인하였다. Cu-Cu thermo-compression bonding process was successfully developed as functions of the deposited Cu thickness and $Ar+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the interfacial toughness was measured by 4-point bending test. Pre-annealing with $Ar+H_2$ gas at $300^{\circ}C$ is effective to achieve enough interfacial adhesion energy irrespective of Cu film thickness. Successful Cu-Cu bonding process achieved in this study results in delamination at $Ta/SiO_2$ interface rather than Cu/Cu interface.
4-point bending test system을 이용한 Cu-Cu 열 압착 접합 특성 평가
김재원,김광섭,이학주,김희연,박영배,현승민,Kim, Jae-Won,Kim, Kwang-Seop,Lee, Hak-Joo,Kim, Hee-Yeon,Park, Young-Bae,Hyun, Seung-Min 한국마이크로전자및패키징학회 2011 마이크로전자 및 패키징학회지 Vol.18 No.4
3차원 칩 적층 접합에 사용하기 위한 Cu-Cu 금속 저온 접합 공정을 위하여 접합 온도 및 플라즈마 표면 전처리에 따른 열 압착 접합을 수행 하였다. 4점굽힘시험과 CCD 카메라를 이용하여 Cu 접합부의 정량적인 계면접착에너지를 평가하였다. 접합 온도 $250^{\circ}C$, $300^{\circ}C$, $350^{\circ}C$에서 각각 $1.38{\pm}1.06$(상한값), $7.91{\pm}0.27$(하한값), $10.36{\pm}1.01$(하한값) $J/m^2$으로 접합온도 $300^{\circ}C$ 이상에서 계면접착에너지 5 $J/m^2$ 이상의 값을 얻었다. 접합 온도 $300^{\circ}C$ 이하 낮은 온도에서 접합하기 위해 Cu-Cu 열 압착 접합 전 Ar+$H_2$ 플라즈마로 $200^{\circ}C$에서 2분간 표면 전처리 후 $250^{\circ}C$ 조건에서 열 압착 접합할 경우 계면접착에너지 값이 $6.59${\pm}0.03$(하한값) $J/m^2$로 표면 전 처리하지 않은 시험편에 비해 접합 특성이 크게 증가 하였다. The quantitative interfacial adhesion energy of the Cu-Cu direct bonding layers was evaluated in terms of the bonding temperature and Ar+$H_2$ plasma treatment on Cu surface by using a 4-point bending test. The interfacial adhesion energy and bonding quality depend on increased bonding temperature and post-annealing temperature. With increasing bonding temperature from $250^{\circ}C$ to $350^{\circ}C$, the interfacial adhesion energy increase from $1.38{\pm}1.06$ $J/m^2$ to $10.36{\pm}1.01$ $J/m^2$. The Ar+$H_2$ plasma treatment on Cu surface drastically increase the interfacial adhesion energy form $1.38{\pm}1.06$ $J/m^2$ to $6.59{\pm}0.03$ $J/m^2$. The plasma pre-treatment successfully reduces processing temperature of Cu to Cu direct bonding.
이상주(Sang-Joo Lee),이학주(Hak-Joo Lee),한승우(Seung-Woo Han),김재현(Jae-Hyun Kim),현승민(Seung-Min Hyun) 대한기계학회 2008 대한기계학회 춘추학술대회 Vol.2008 No.5
The rate-dependent behaviors of gold thin films are investigated based on the stress-relaxation test. Tensile and stress-relaxation specimens of gold thin film with a thickness about 1㎛ are designed and fabricated. The stress-strain curves of gold thin films are measured by micro-tensile test with novel real-time strain measurement module, and their rate-dependent behaviors are discussed in terms of strain rate. As the strain rate increases, the gold thin film tends to be brittle. The fracture surfaces after tensile tests are observed using scanning electron microscope. The stress-relaxation test under various stress-level are also performed and reported to characterize the rate-dependent behavior of gold thin films in terms of viscoelasticity.
금 박막의 기계적 물성에 끼치는 두께와 미세조직의 영향
전영선(Young-Sun Jeon),이상주(Sang-Joo Lee),현승민(Seung-Min Hyun),이학주(Hak-Joo Lee) 대한기계학회 2007 대한기계학회 춘추학술대회 Vol.2007 No.10
We have used Visual Image Tracing(VIT) strain measurement system coupled with a micro tensile testing unit to test thickness and microstructure dependent mechanical behavior of Au film. The advantage using this method is to monitor the real time images of specimen during the test in order to determine its Young’s modulus, yield strength and tensile strength. 0.5, 1 and 2 ㎛ thick films were deposited by sputtering system. Free standing films were prepared through lithography and etching processes. Au films were annealed at 300℃ and 350℃ to achieve microstructure evolution and Focus ion beam (FIB SEM) and transmission electron microscopy (TEM) were employed to characterize grain sizes of films. Thickness and grain sizes dependent mechanical behavior such as stress-strain curve, Young’s modulus and yield strength of Au thin film will be presented.