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지역난방 열사용시설 자동제어시스템 개선을 통한 회수온도 저감 연구
하승규(Seung-Kyu Ha),김연홍(Youn-Hong Kim),이훈(Hoon Lee) 대한설비공학회 2006 대한설비공학회 학술발표대회논문집 Vol.2006 No.6
The main idea of this study is to turn attention on the question of good cooling ability of customer substations in large district heating networks. The main reason for that is based on our experience that the optimization of district heating very often is directed toward production, whereas questions of optimal distribution are neglected if only the necessary load can be supplied and the customer's request for comfort is met. Our view is that low return temperature(operational temperature differences, ΔT) in district heating systems is an important feature for efficient net operation and gives both economic and operational benefits to the district heating supplier. Furthermore, it is as well a prerequisite for meeting the customers demand for reliable supply of the heat load. However, in many practical cases we have seen that district heating return temperatures are higher than necessary. Hence, the aim of the study is to propose and verify a method for detection of the most critical consumers of the net and to identify the reasons for resulting high return temperature. From the results, temperature control system is presented as one of the most important reason of high return temperature in DH networks.
유기금속화학기상증착법을 이용한 적층 InAs 양자점 적외선 수광소자 성장 및 특성 평가 연구
김정섭,하승규,양창재,이재열,박세훈,최원준,윤의준,Kim, Jung-Sub,Ha, Seung-Kyu,Yang, Chang-Jae,Lee, Jae-Yel,Park, Se-Hun,Choi, Won-Jun,Yoon, Eui-Joon 한국진공학회 2010 Applied Science and Convergence Technology Vol.19 No.3
유기금속화학기상증착법으로 적층 InAs/$In_{0.1}Ga_{0.9}As$ DWELL (dot-in-a-well) 구조를 성장하여 n-i-n 구조의 적외선 수광소자를 제작하였으며, PL (photoluminescence) 발광 특성 및 암전류 특성을 분석하였다. 동일한 조건으로 양자점을 적층하였을 때 크기 및 밀도의 변화에 의한 이중 PL peak을 관찰하였으며, TMIn의 유량을 조절함으로써 단일 peak을 갖는 균일한 크기의 양자점 적층 구조를 성장할 수 있었다. 적외선 수광소자 구조를 성장함에 있어서, 상부의 n-형 GaAs의 성장 온도가 600도 이상인 경우 PL 발광 세기가 급격히 감소하였고 이에 따른 암전류의 증가를 관찰하였다. 0.5 V 인가 전압에서 암전류의 온도 의존성에 대한 활성화 에너지의 크기는 성장온도가 580도인 경우 106 meV이고, 650도의 경우는 48 meV로 급격이 낮아졌다. 이는 고온의 성장 온도에 의한 InAs 양자점과 $In_{0.1}Ga_{0.9}As$ 양자우물구조 계면에서의 열적 상호 확산에 의하여 비발광 천이가 증가되었기 때문이다. We grew multi-stacked InAs/$In_{0.1}Ga_{0.9}As$ DWELL (dot-in-a-well) structure by metal organic chemical vapor deposition and investigated optical properties by photoluminescence and I-V characteristics by dark current measurement. When stacking InAs quantum dots (QDs) with same growth parameter, the size and density of QDs were changed, resulting in the bimodal emission peak. By decreasing the flow rate of TMIn, we achieved the uniform multi-stacked QD structure which had the single emission peak and high PL intensity. As the growth temperature of n-type GaAs top contact layer (TCL) is above $600^{\circ}C$, the PL intensity severely decreased and dark current level increased. At bias of 0.5 V, the activation energy for temperature dependence of dark current decreased from 106 meV to 48 meV with increasing the growth temperature of n-type GaAs TCL from 580 to $650^{\circ}C$. This suggest that the thermal escape of bounded electrons and non-radiative transition become dominant due to the thermal inter-diffusion at the interface between InAs QDs and $In_{0.1}Ga_{0.9}As$ well layer.