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임신중기 모체 혈청 알파 태아 단백 , free β - hCG 를 이용한 산전선별검사 위양성과 주산기 예후에 관한 연구
채명관(Myung Kean Chae),이해혁(Hae Hyeog Lee),최승도(Seung Do Choi),이항재(Hang Jae Lee),이정재(Jeong Jae Lee),남계현(Kae Hyun Nam),이임순(Im Soon Lee),이권해(Kwon Hae Lee) 대한산부인과학회 1999 Obstetrics & Gynecology Science Vol.42 No.2
N/A Objective: To determne whether abnormal results of doble saeening tests for Down syndrome with MSAFP and free B-hCG are associated with adverse pregnancy outcome. Methods: Between October 1994 and September 1997, 205 among 1731 who were screened had increased risk for Down screening program of CIS biointernational, Fetuses with Chromosomal abnormality or congenital anomalies and less than 35 years of maternal age were excluded from this study. Down syndrome screening test was performed between 14-22 weeks of gestation. Results: Of 1731 women, 205 (13.4%) had increased Down syndrome risk. The pregnancy outcome of women with increased Down syndrome risk were compared with those of women without such risk There were no significant difference in the incidence of preterm labor (6[2.9%] vs 112[7.3%)), premature rupture of the membranes (2[0.9%] vs 56[3.6%]), pregnancy induced hypertension (2[0.9%] vs 36[2.3%]), abruptio placentae (0[0%] vs 2[0.1%]), low birth weight (2[0.9%] vs 21[1.3%]), oligohydramnios (4[1.9%] vs 10[0.6%]), intrauterine fetal death (0[0%] vs 2[0.1%]). Conclusion: False positive results of Down syndrome screening test in the 2nd trimester do not appear to be associated with adverse pregnancy outcome. But there are statistically significant increases of adverse pregnancy outcome in wemen with elevation of MSAFP or elevation of free B-hCG.
Reactive Ion Beam Etching (RIBE) of MTJ Cell using H₂/NH₃ plasma for Magnetic Random Access Memories
김두산,김예은,장윤종,김인호,김형용,채명관,염근영 한국진공학회 2021 한국진공학회 학술발표회초록집 Vol.2021 No.2
MRAM을 구동하기 위해 Magnetic Tunnel Junction (MTJ)층이 사용되며, 일반적으로 MTJ 층은 fixed layer, free layer, barrier layer로 구성된다. MTJ의 자성층 재료로써 CoFeB 및 CoPt가 일반적으로 사용되고 있으며, 이러한 MTJ cell 식각을 위해서 halogen-based RIE가 이용된다. 그러나, halogen 기체와 자성재료가 반응하여 halogen compound를 형성할 경우, 이는 non-volatile한 화합물로써 화학적 손상을 주게 되며, 식각 과정에서 패턴의 측벽에 다시 재 증착 되는 문제 등으로 인해 쉽게 제거되지 않는다. 본 연구에서는 이러한 문제를 해결하기 위해 H<sub>2</sub>/NH<sub>3</sub> 가스조합을 이용한 RIBE를 통해 CoFeB 박막의 식각 특성을 확인하였다.