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주물공정 폐열 재이용을 위한 잠열소재기반 열저장 운송시스템 적용 연구
지형용(Hyung Yong Ji),정동열(Dong-yeol Chung),정순영(Soon Yung Jung),박동호(Dong-ho Park),이수양(Soo-yang Lee),백종현(Jong Hyeon Peck) 대한설비공학회 2020 대한설비공학회 학술발표대회논문집 Vol.2020 No.6
Design and manufacture of thermal storage and transportation system was performed in order to reuse the waste heat of the casting process, and the heat charge and discharge properties are analyzed in field site. In the heat charge of thermal storage tank, the waste heat from the casting process induction furnace is used as an evaporation heat source of heat pump, and condensing heat source supplied to thermal storage tank. Then, the thermal storage tank was transferred in order to supply the heat required for the concrete curing room as a supplementary heat source. As an experimented results of the latent heat temperature, capacity, and heat charge and discharge time of the heat storage tank, it is an appropriate method for this application study. However, energy saving and process condition analysis must be additionally secured to the power consumption of heat pump and heater mixing.
HWCVD를 이용한 Amorphous Si 박막 증착공정에서 수소량에 따른 박막성장 특성
박승일(Seungil Park),지형용(Hyung Yong Ji),김명준(MyeongJun Kim),김근주(Keunjoo Kim) 한국태양광발전학회 2013 Current Photovoltaic Research Vol.1 No.1
We investigated the growth mechanism of amorphous-phase Si thin films in order to improve the film characteristics and circumvent photo-degradation effects by implementation of hot-wire chemical vapor deposition. Amorphous silicon thin films grown in a silane/hydrogen mixture can be decomposed by a resistive heat filament. The structural properties were observed by Raman spectroscopy, FTIR, SEM, and TEM. The electrical properties of the films were measured by photo-conductivity, dark-conductivity, and photo-sensitivity. The contents of Si-H and Si-Hn bonds were measured to be 19.79 and 9.96% respectively, at a hydrogen flow rate of 5.5 sccm, respectively. The thin film has photo-sensitivity of 2.2×10<SUP>5</SUP> without a crystalline volume fraction. The catalyst behavior of the hot-wire to decompose the chemical precursors by an electron tunneling effect depends strongly on the hydrogen mixture rate and an amorphous Si thin film is formed from atomic relaxation.