전동밸브의 구동회로에서 Opto-coupler들의 one chip화 구현

정원채(Won-Chae Jung) 대한전자공학회 2001 대한전자공학회 학술대회 Vol.2001 No.6

전이금속을 담지한 Ti-SCM 제조 및 특성연구

정원채 ( Won Chae Jung ),홍지숙 ( Ji Sook Hong ),서정권 ( Jeong Kwon Suh ),서동학 ( Dong Hack Suh ) 한국공업화학회 2010 공업화학 Vol.21 No.4

실리콘에 MeV 로 이온주입된 인의 결함분포와 profile 에 관한 연구

정원채 ( Won Chae Jung ) 한국전기전자재료학회 1997 전기전자재료학회논문지 Vol.10 No.9

실리콘 직접 본딩에 의한 P-N 접합의 특성에 관한 연구

정원채,Jung, Won-Chae 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.10

This study investigated the various physical and electrical effects of silicon direct bonding. Direct bonding means the joining of two wafers together without an intermediate layer. If the surfaces are flat, and made clean and smooth using HF treatment to remove the native oxide layer, they can stick together when brought into contact and form a weak bond depending on the physical forces at room temperature. An IR camera and acoustic systems were used to analyze the voids and bonding conditions in an interface layer during bonding experiments. The I-V and C-V characteristics are also reported herein. The capacitance values for a range of frequencies were measured using a LCR meter. Direct wafer bonding of silicon is a simple method to fuse two wafers together; however, it is difficult to achieve perfect bonding of the two wafers. The direct bonding technology can be used for MEMS and other applications in three-dimensional integrated circuits and special devices.

비정질 및 단결정 실리콘에서 10~50 keV 에너지로 주입된 안티몬 이온의 분포와 열적인 거동에 따른 연구

정원채,Jung, Won-Chae 한국전기전자재료학회 2015 전기전자재료학회논문지 Vol.28 No.11

For the formation of $N^+$ doping, the antimony ions are mainly used for the fabrication of a BJT (bipolar junction transistor), CMOS (complementary metal oxide semiconductor), FET (field effect transistor) and BiCMOS (bipolar and complementary metal oxide semiconductor) process integration. Antimony is a heavy element and has relatively a low diffusion coefficient in silicon. Therefore, antimony is preferred as a candidate of ultra shallow junction for n type doping instead of arsenic implantation. Three-dimensional (3D) profiles of antimony are also compared one another from different tilt angles and incident energies under same dimensional conditions. The diffusion effect of antimony showed ORD (oxygen retarded diffusion) after thermal oxidation process. The interfacial effect of a $SiO_2/Si$ is influenced antimony diffusion and showed segregation effects during the oxidation process. The surface sputtering effect of antimony must be considered due to its heavy mass in the case of low energy and high dose conditions. The range of antimony implanted in amorphous and crystalline silicon are compared each other and its data and profiles also showed and explained after thermal annealing under inert $N_2$ gas and dry oxidation.

집속이온빔 연마에 의한 패턴의 형태에 관한 연구

정원채,Jung, Won-Chae 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.11

For the measurements of surface shape milled using FIB (focused ion beam), the silicon bulk, $Si_3N_4/Si$, and Al/Si samples are used and observed the shapes milled from different sputtering rates, incident angles of $Ga^+$ ions bombardment, beam current, and target material. These conditions also can be influenced the sputtering rate, raster image, and milled shape. The fundamental ion-solid interactions of FIB milling are discussed and explained using TRIM programs (SRIM, TC, and T-dyn). The damaged layers caused by bombarding of $Ga^+$ ions were observed on the surface of target materials. The simulated results were shown a little bit deviation with the experimental data due to relatively small sputtering rate on the sample surface. The simulation results showed about 10.6% tolerance from the measured data at 200 pA. On the other hand, the improved analytical model of damaged layer was matched well with experimental XTEM (cross-sectional transmission electron microscopy) data.

동해항(東海港)의 부진동(副振動) 특성(特性)(2. 수치계산(數値計算))

정원무,정경태,채장원,Jeong, Weon Mu,Jung, Kyung Tae,Chae, Jang Won 대한토목학회 1993 대한토목학회논문집 Vol.13 No.3

장주기파(長週期波)의 침입(侵入) 변형(變形)에 의한 항내(港內) 수면교란(水面攪亂) 현상(現像)을 효과적(效果的)으로 분석(分析) 및 예측(豫測)하기 위하여 해석해(解析解)와 유한요소(有限要素)를 복합적(複合的)으로 사용한 수치모형(數値模型)을 이용하였다. 기본방정식(基本方程式)으로 완경사(緩傾斜) 방정식(方程式)을 사용하였으며, 고체(固體) 경계면(境界面)에서는 부분흡수(部分吸收) 경계조건(境界條件)을 사용하였다. 방파제(防波堤) 주변(周邊)과 항내(港內) 영역(領域)은 유한요소(有限要素)로 모형화(模型化)하고 항외(港外) 영역(領域)에서는 Helmholtz 방정식(方程式)의 해석해(解析解)를 이용하였다. Chen과 Mei(1974)의 방법(方法)을 이용하여 경계치(境界値) 문제(問題)의 범함수(凡?數)를 구한 후 구성(構成)되는 최종적(最終的)인 연립방정식(聯立方程式)을 Gauss 소거법(消去法)으로 푸는 수치모형(數値模型)을 수립(樹立)하였다. 현장관측(現場觀測) 자료(資料)의 스펙트럼 분석(分析)으로 제시된 동해항(東海港)의 Helmholtz natural period 및 제(第)2 첨두주기(尖頭週期)는 수치계산(數値計算)으로 구해진 것과 잘 일치(一致)하였다. 항만구조물(港灣構造物)에서의 반사율(反射率)을 변화(變化)시키면서 구한 증폭비(增幅比)와 관측치(觀測値)의 비교(比較) 결과(結果) 반사계수(反射係數)를 0.99로 했을 때 가장 양호(良好)한 일치(一致)를 나타내었다. A numerical model has been used for the prediction of wave agitations in a harbor which are induced by the intrusion and transformation of incident waves. Based on linear wave theory a mild-slope equation has been used. A partial absorbing boundary condition has been used on solid boundary. Functional has been derived following Chen and Mei(l974)'s technique based on Hybrid Element Method which uses finite discretisation in the inner region and analytical solution of Helmholtz equation in the outer region. Final simultaneous equation has been solved using the Gaussian Elimination Method. Helmholtz natural period and second peak period of seiche in Donghae Harbor coincide very well with the results from numerical calculation. Computed amplification factors show good agreement, especially when the reflection coefficient on solid boundary is 0.99, with those of measurements.

낮은 에너지로 실리콘에 이온 주입된 분포와 열처리된 인듐의 거동에 관한 시뮬레이션과 모델링

정원채,Jung, Won-Chae 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.12

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

전도성 네피온필름-금 전극층 액츄에이터에 관한 연구

정원채,김형민,Jung, Won-Chae,Kim, Hyung Min 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.5

For conventional electrical actuators, the materials are mainly made up of metals, which mean they are prone to corrosion and electrical sparking. Replacing these systems with polymer metal composite based materials can be solved both problems. Considering their excellent electromechanical property, low device fabrication cost, light weight, and good electrical conductivity, the actuator based on ionic polymer metal composite (IPMC) was fabricated using Nafion film, NaOH 0.1 molar solution, and Au electrode. IPMCs exhibit good electrostatic property which means they can in principle be used in making actuators based on electromechanical motions. The resistance measurements of Nafion film after soaking in NaOH and deionized water were demonstrated and compared each other. The result of sample soaked in NaOH showed better electrical conductivity than in deionized water. The fabricated IPMC actuator exhibits a large deformation of bending displacement of approximately 9 mm with applied low AC voltage 6.89 V at 2.84 Hz. The result of computer simulation was also very similar and shown as a bending displacement of 8.6085 mm.

SiGe에 이온 주입과 열처리에 의한 불순물 분포의 연구

정원채,Jung, Won-Chae 한국전기전자재료학회 2018 전기전자재료학회논문지 Vol.31 No.6

For the investigation of dopant profiles in implanted $Si_{1-x}Ge_x$, the implanted B and As profiles are measured using SIMS (secondary ion mass spectrometry). The fundamental ion-solid interactions of implantation in $Si_{1-x}Ge_x$ are discussed and explained using SRIM, UT-marlowe, and T-dyn programs. The annealed simulation profiles are also analyzed and compared with experimental data. In comparison with the SIMS data, the boron simulation results show 8% deviations of $R_p$ and 1.8% deviations of ${\Delta}R_p$ owing to relatively small lattice strain and relaxation on the sample surface. In comparison with the SIMS data, the simulation results show 4.7% deviations of $R_p$ and 8.1% deviations of ${\Delta}R_p$ in the arsenic implanted $Si_{0.2}Ge_{0.8}$ layer and 8.5% deviations of $R_p$ and 38% deviations of ${\Delta}R_p$ in the $Si_{0.5}Ge_{0.5}$ layer. An analytical method for obtaining the dopant profile is proposed and also compared with experimental and simulation data herein. For the high-speed CMOSFET (complementary metal oxide semiconductor field effect transistor) and HBT (heterojunction bipolar transistor), the study of dopant profiles in the $Si_{1-x}Ge_x$ layer becomes more important for accurate device scaling and fabrication technologies.