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정권범,Byung Du Ahn,Joseph Park,박진성 한국물리학회 2011 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.59 No.6
Two different types of In-Ga-Zn-O thin-film transistors, each passivated with SiOx and SiNx, were studied under negative and positive bias illumination stress (NBIS and PBIS, respectively). Larger shifts in threshold voltage were observed in the SiNx-passivated device, under both NBIS and PBIS. Photo-excited charge collection spectroscopy analyses suggest that the incorporation of hydrogen during the nitride deposition has induced a larger concentration of sub-bandgap trap sites within the oxide semiconductor and/or at the semiconductor/dielectric interface. These are suspected to trap holes during NBIS and electrons during PBIS, which induce negative and positive shifts in the threshold voltage, respectively.
정권범,조만호,C. J. Yim,황정남,고대홍,J.-H. Lee,M. J. Kim,N. I. Lee,Y.-S. Kim 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.4
Hf-silicate films were grown by using atomic layer deposition with Hf[N(CH3)(C2H5)]4 and SiH[N(CH3)2]3 precursors. The composition of the Hf-silicate films was excellently well controlled by using the ratio of the deposition cycles of HfO2 and SiO2 (Hf/Si). The physical and the electrical characteristics of the Hf-silicate films were compared for Hf/Si = 3/1, Hf/Si = 1/1, and Hf/Si = 1/3. The relative Hf/(Hf+Si) compositions were 58 %, 41 %, and 25 % for Hf/Si = 3/1, Hf/Si = 1/1, and Hf/Si = 1/3, respectively. The binding characteristics of the Hf-silicate films were shifted in the direction of higher binding energy with increasing of SiO2 portion, resulting in electric charging. The molecular structure of the Hf-silicate films was changed by the relative compositions of HfO2 and SiO2. In addition, the dielectric characteristics of the Hf-silicate films were directly proportional to the HfO2 portion.
박현우,정권범 한국진공학회 2017 Applied Science and Convergence Technology Vol.26 No.3
Aluminum-doped ZnO (AZO) thin films were deposited by atomic layer deposition (ALD) with respect to the Al doping concentrations. In order to explain the chemical stability and electrical properties of the AZO thin films after hydrogen peroxide (H2O2) solution immersion treatment at room temperature, we investigated correlations between the electrical resistivity and the electronic structure, such as chemical bonding state, conduction band, band edge state below conduction band, and band alignment. Al-doped at ~ 10 at % showed not only a dramatic improvement of the electrical resistivity but also excellent chemical stability, both of which are strongly associated with changes of chemical bonding states and band edge states below the conduction band.