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펄스파워용 고전압 MCT (MOS Controlled Thyristor) 소자 제작 및 특성 평가
조두형(Doohyung Cho),원종일(Jong il Won),권성규(Sungkyu Kwon),정동윤(Dongyun Jung),장현규(Hyungyu Jang),이성현(Seong Hyun Lee),임종원(Jong-Won Lim),박건식(Kunsik Park) 대한전자공학회 2021 대한전자공학회 학술대회 Vol.2021 No.6
ETRI DMC Convergence Research Department designed and fabricated MCT devices for pulse power systems. in this paper, we evaluated the electrical characteristics of the fabricated 1400V and 2500V class MCT devices. As a result, the 1400V class MCT device achieved a breakdown voltage of 1815V, and on/off-FET V<sub>Th</sub> achieved 0.9V/-0.5V. Additionally, the 2500V class MCT device achieved a breakdown voltage of 3150V, and on/off-FET V<sub>th</sub> achieved 1.1V/-1.0V respectively.