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Microcrystalline Silicon Growth by a Low Laser Energy Crystallization on Plastic Substrate
Do Young Kim,이준신,Chang Ki Seo,Chi Hyung Kim,Myung Suk Shim 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.44 No.52
We are reporting the crystallization of amorphous silicon (a-Si) using a XeCl excimer laser treatment. Although polycarbonate (PC) plastic substrates are very weak at high temperatures of more than 150 C, they are very useful for applications to microelectronics because of light weight, high transmittance, and exibility. In order to crystallize a-Si lms on plastic substrates, we suggest that a CeO2 seed layer will be very helpful at a low laser energy density. The seed layer is deposited at room temperature by rf using magnetron sputtering. A seed layer deposition method will be also presented in detail in this article. We compare a-Si crytallization without a seed layer with one with a seed layer deposited between the a-Si and the plastic substrate. The a-Si was deposited on the plastic substrate by using inductively coupled plasma Chemical-Vapor Deposition (ICPCVD) at the room temperature. In this paper, we will present the crystallization properties of a-Si with and without a CeO2 seed layer on the plastic substrate.
Hot-wire CVD Grown Microcrystalline Silicon Films with and without Initial Growing Layer
Do Young Kim,이준신,Chang Ki Seo,Myung Suk Shim,Suresh Kumar Dhungel 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.44 No.52
Microcrystalline Si (c-Si) lms have been deposited by using hot-wire chemical vapor deposition (HWCVD) with ve W wire laments of 0.5 mm in diameter. We compared the HWCVD-grown lms with the lm exposed to an inductively coupled plasma system for modication of the seed layer. The W-wire lament temperature was maintained below 1600 C to avoid metal contamination by thermal evaporation of the lament. The deposition conditions were varied, including the H2 dilution ratio, with and without a plasma treatment. From the Raman analysis, we observed that the lm crystallinity was strongly in uenced by the H2 dilution ratio and was weakly aected by the distance between the wire and the substrate. We were able to achieve a crystalline volume fraction of about 70 % with a SiH4/H2 ratio of 1.3 %, a wire temperature of 1514 C, a substrate distance of 4 cm, and a chamber pressure of 38 mTorr. We investigated the in uence of a c-Si seed layer by using plasma treatment. This article also deals with the in uence of the H2 dilution ratio in crystallinity modication.