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R.F Sputtering 법으로 증착한 ITO 박막의 미세구조와 전기ㆍ광학적 특성
전영희(Y.H. Jung),이은수(E.S. Lee),B. Munir,R.A. Wibowo,김규호(K.H. Kim) 한국표면공학회 2005 한국표면공학회지 Vol.38 No.4
Highly conductive and transparent in the visible region tin-doped indium oxide(ITO) thin films were deposited on Corning glass by r.f sputtering. To achieve high transmittance and low resistivity, we examined various parameters such as r.f power and deposition time. The films crystallinity shifted from (222) to (400) and (440) orientation as deposition time and r.f power increased. Surface roughness RMS value increased proportionally with deposition time. The lowest resistivity was 5.36 × 10<SUP>-4</SUP> Ωㆍ㎝ at 750 ㎚ thickness, 200℃ substrate temperature and 125 w r.f power. All of the films showed over 85% transmittance in the visible wavelength range.