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철을 오염시킨 n-GaAs의Photoreflectance에 관한 연구
유재인,문영희,이동울,이정열,배인호,장광수 嶺南大學校 基礎科學硏究所 1998 基礎科學硏究 Vol.18 No.-
We investigated the variation of PR signals for n-GaAs surface treated with Fe as annealing method. The samples were annealed by isochronal(200∼600 ℃, 10 min) and isothermal(300 ℃, 10 ∼60 min) method. In PR signals measured from isochronal annealed samples, the rate of intensity decreasing for n-GaAs was 49%, and that for n-GaAs surface treated with Fe was 66%. We assumed that the large amount of decreasing intensity for Fe contaminated sample caused by decreasing carrier density due to increasing of ?? neutral acceptor at higher annealing temperature. In PR signals measured from isothermal annealed samples, the signals for annealed n-GaAs decreased with increasing annealing time, and the signals for n-GaAs surface treated with Fe continuously increased with increasing annealing time. It can be assumed that the increasing of PR intensity for Fe contaminated samples as annealing time caused by the diffusion of Fe atoms from the surface.