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APCVD법을 사용한 보론 포스파이드의 증착 및 특성에 관한 연구
김순영,문병필,윤여철,전호승,김철주 서울시립대학교정보기술연구소 2001 정보기술연구소 논문집 Vol.3 No.-
Boron Phosphide films were deposited on the glass substrate at the low temperature, 550℃, by the reaction of B₂H_6 with PH₃ using CVD. N₂ was employed as carrier gas. The reactant gas rates were 50 ㎖/min for B₂H_6, 50 ㎖/min for PH₃ and 1.5ℓ/min for N₂. The films were annealed for 1hour, 3hours in N₂ambient at 550℃. The deposition rate was 1000Å/min and the refractive index of film was 2.6. The measurement of XRD shows that the films have the preferred orientation of (1 0 1). The data of VIS spectrophotometer show 75.49% for as-deposited, 76.71% for 1hr-annealed and 86.4 % for 3 hrs-annealed. The data of AFM show 73Å for as-deposited, 88.9Å for 1hr-annealed and 220Å for 3hrs-annealed. Also, The data of the secondary electron emission rate(γ) s how 0.317 for as -deposited, 0.357 for 1hr-annealed and 0.537 for 3hrs-annealed. And, The film shows the surface deposited thin film, bu using FT-IR, has the O-H bond and this bond is greatly decreased as annealing.