http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
오준호(Oh, Joon-Ho),김경국(Kim, Kyoung-Kook),송준혁(Song, Jun-Hyuk),성태연(Seong, Tae-Yeon) 한국신재생에너지학회 2010 한국신재생에너지학회 학술대회논문집 Vol.2010 No.11
Transparent conducting oxides (TCOs) are of significant importance for their applications in various devices, such as light-emitting diodes, thin-film solar cells, organic light-emitting diodes, liquid crystal displays, and so on. In order for TCOs to contribute to the performance improvement of these devices, TCOs should have high transmittance and good electrical properties simultaneously. Sn-doped In₂O₃ (ITO) is the most commonly used TCO. However, indium is toxic and scarce in nature. Thus, ZnO has attracted a lot of attention because of the possibility for replacing ITO. In particular, group III impurity-doped ZnO showed the optoelectronic properties comparable to those of ITO electrodes. Al-doped ZnO exhibited the best performance among various doped ZnO films because of the high substitutional doping efficiency. However, in order for the Al-doped ZnO to replace ITO in electronic devices, their electrical and optical properties should further significantly be improved. In this connection, different ways such as a variation of deposition conditions, different deposition techniques, and post-deposition annealing processes have been investigated so far. Among the deposition methods, RF magnetron sputtering has been extensively used because of the easiness in controlling deposition parameters and its fast deposition rate. In addition, when combined with post-deposition annealing in a reducing ambient, the optoelectronic properties of Al-doped ZnO films were found to be further improved. In this presentation, we deposited Al-doped ZnO (ZnO:Al₂O₃ = 98:2 wt%) thin films on the glass and sapphire substrates using RF magnetron sputtering as a function of substrate temperature. In addition, the ZnO samples were annealed in different conditions, e.g., rapid thermal annealing (RTA) at 900?C in N₂ ambient for 1 min, tube-furnace annealing at 500?C in N₂:H₂=9:1 gas flow for 1 hour, or RTA combined with tube-furnace annealing. It is found that the mobilities and carrier concentrations of the samples are dependent on growth temperature followed by one of three subsequent post-deposition annealing conditions.
Convolutional Neural Network Architecture 에 따른 Cone beam artifact 제거 성능 비교
오준호(Jun-Ho Oh),김병준(Byeong-Joon Kim),백종덕(Jong-Duk Baek) 대한전자공학회 2018 대한전자공학회 학술대회 Vol.2018 No.11
CBCT(Cone beam CT) is widely used in diagnosis and treatment planning of implant dentistry, orthopedics, and interventional radiology. However, the reconstructed images by CBCT geometry generate cone beam artifacts, which would disturb lesion detectability and degrade diagnostic accuracy. In this work, we present convolutional neural network(CNN) based cone beam artifacts correction method, which is computationally efficient and achieve better performance in artifact correction. We compared the performance of the cone beam artifacts reduction via U-Net and ResNet models, which are trained with simulated CBCT images. Our result showed that U-Net performs better than ResNet in cone beam artifact reduction.