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수용성 희생층을 활용한 태양전지용 다결정 실리콘 멤브레인 제조
강세미(Semi Kang),권정규(Jungkyu Kwon),정창훈(Changhoon Jeong),모성인(Sung-In Mo),오준호(Joon-Ho Oh),유상우(Sangwoo Ryu) 한국세라믹학회 2022 세라미스트 Vol.25 No.1
During the fabrication of crystalline silicon solar cells, kerf-loss caused by the wire-sawing of silicon ingots to produce thin wafers inevitably limits the reduction of electricity production cost. To avoid the kerf- loss, direct growth of crystalline silicon wafers of 50-150 μm with a porous separation layer that can be mechanically broken during the exfoliation process, has been widely investigated. However, several issues including flattening of the surface after the exfoliation remain unsolved. In this work an alternative method that utilizes a water-soluble Sr3Al2O6 (SAO) sacrificial layer inserted between the mother substrate and the grown crystalline silicon layers is introduced. Polycrystalline silicon layers were grown on SAO/Si by plasma- enhanced CVD process and silicon membranes could be successfully obtained after the dissolution of SAO in the water. Same process could be applied to obtain flexible amorphous silicon membranes. Further research is being conducted to increase the size of the exfoliated wafer, which expects to reduce the production cost of crystalline silicon solar cells effectively.