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여철호,정홍배 서경대학교 산업기술연구소 2002 産業技術硏究所論文集 Vol.12 No.-
chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the Ag/As40Ge10Se15S35 multi-layer. Mutilayer structures formed by alternating metal(Ag) and chalcogenide(As40Ge10Se15S35). The Ag polarized photodoping result in reducing time of saturation anisotrophy and increasing sensitivity of linearly anisotrophy intensity, up to maximum 220%. In the thin films of chalcogenide, the Ag polarized photodoping will be show a capability of new method that suggested more improvement of photoinduced anisotrophy property.
두께에 따른 비정질 칼코게나이드 $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ 박막의 홀로그래피 데이터 격자형성
여철호,정홍배,Yea, Chul-Ho,Chung, Hong-Bay 대한전기학회 2006 전기학회논문지C Vol.55 No.8
The Ag photodoping effect in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (${\lambda}$=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light ($d_p=1.66{\mu}m$). It exhibits a tendency of the variation of the diffraction efficiency (${\eta}$) in amorphous chalcogende films, independently of the Ag photodoping. That is, ${\eta}$ increases rapidly at the beginning of the recording process and reaches the maximum (${\eta}_{max}$) and slowly decreases slowly with the exposed time. In addition, the value of ${\eta}_{max}$ depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately 1/2 ${\Delta}n$), where ${\Delta}$n is the refractive index of chalcogenide thin film (${\Delta}n=2.0$). The ${\eta}$ is largely enhanced by Ag photodoping into the chakogenides. In particular, the value of ${\eta}_{max}$ in a bilayer of 10-nm-thick Ag/150-nm-thick $As_{40}Ge_{10}Se_{15}S_{35}$ film is about 1.6%, which corresponds to ${\sim}20$ times larger than that of the single-layer $As_{40}Ge_{10}Se_{15}S_{35}$ thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.
Ag/AsGeSeS 다층박막의 광유기 이방성(PA) 특성
여철호,나선웅,신경,박정일,정홍배,Yeo, Cheol-Ho,Na, Su-Woong,Shin, Kyung,Park, Jeong-Il,Chung, Hong-Bay 한국전기전자재료학회 2003 전기전자재료학회논문지 Vol.16 No.2
The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism using the irradiation with Polarized He-Ne laser light in the Ag/As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$ multi-layer. Multilayer structures were formed by alternating metal(Ag) and chalcogenide(As$_{40}$ Ge$_{10}$Se$_{15}$ S$_{35}$) thin film. The Ag Polarized photodoping result in reducing the time of saturation anisotropy and increasing the sensitivity of linearly anisotropy intensity As the results, the Ag polarized photodoping will be have a capability of new method that suggests more improvement of photoinduced anisotropy property in the thin films of chalcogenide.ogenide.ide.
두께에 따른 비정질 칼코게나이드 Ag/As40Ge10Se15S35 박막의 홀로그래피 데이터 격자형성
여철호,정홍배 대한전기학회 2006 전기학회논문지C Vol.55 No.8(C)
- The Ag photodoping effect in amorphous As40Ge10Se15S35 chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (λ=632.8 nm). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light (dp=1.66 μm). It exhibits a tendency of the variation of the diffraction efficiency (η) in amorphous chalcogende films, independently of the Ag photodoping. That is, η increases rapidly at the beginning of the recording process and reaches the maximum (ηmax) and slowly decreases slowly with the exposed time. In addition, the value of ηmax depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 nm is observed 0.083% at d = 150 nm (approximately l/2 Δn), where Δn is the refractive index of chalcogenide thin film (Δn=2.0). The η is largely enhanced by Ag photodoping into the chalcogenides. In particular, the value of ηmax in a bilayer of 10-nm-thick Ag/150-nm-thick As40Ge10Se15S35 film is about 1.6%, which corresponds to ~ 20 times larger than that of the single-layer As40Ge10Se15S35 thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.
두께에 따른 비정질 칼코게나이드 Ag/As₄?Ge₁?Se₁?S₃? 박막의 홀로그래피 데이터 격자형성
余哲浩(Chul-Ho Yeo),鄭鴻倍(Hong-Bay Chung) 대한전기학회 2006 전기학회논문지C Vol.55 No.8
The Ag photodoping effect in amorphous As₄?Ge₁?Se₁?S₃? chalcogenide thin films for holographic recording has been investigated using a He-Ne laser (λ=632.8 ㎚). The chalcogenide films thickness prepared in the present work were thinner in comparison with the penetration depth of recording light (d<SUB>p</SUB>=l.66 ㎛). It exhibits a tendency of the variation of the diffraction efficiency (η) in amorphous chalcogende films, independently of the Ag photodoping. That is, η increases rapidly at the beginning of the recording process and reaches the maximum (η<SUB>max</SUB>) and slowly decreases slowly with the exposed time. In addition, the value of η<SUB>max</SUB> depends strongly on chalcogenide film thickness(d) and its maximum peak among the films with d = 40, 80, 150, 300, and 633 ㎚ is observed 0.083% at d = 150 ㎚ (approximately 1/2 Δn), where Δn is the refractive index of chalcogenide thin film (Δn=2.0). The η is largely enhanced by Ag photodoping into the chalcogenides. In particular, the value of η<SUB>max</SUB> in a bilayer of 10-㎚-thick Ag/150-㎚-thick As₄?Ge₁?Se₁?S₃? film is about 1.6%, which corresponds to ~ 20 times larger than that of the single-layer As₄?Ge₁?Se₁?S₃? thin film (without Ag). And we obtained the diffraction pattern according to the formation of (P:P) polarization holographic grating using Mask pattern and SLM.
Ag 및 MgF2/AsGeSeS 다층박막에서의 편광 홀로그래피 회절효율 특성
나선웅,여철호,김종빈,정홍배 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.12
We have carried out two-beam interference experiments to form holographic gratings on As40Se15S35Ge10 single layer, Ag/As40Se15S35Ge10 and MgF2/As40Se15S35Ge10 multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm) under different polarization combinations(intensity polarization holography, phase polarization holography). The diffraction efficiency was obtained by the +1st order intensity. The maximum diffraction efficiency of As40Se15S35Ge10 single layer, Ag/As40Se15S35Ge10 and MgF2/As40Se15S35Ge10 multi-layer were 0.8%, 1.4% and 3.1% under intensity polarization holography, respectively.
Ag 및 MgF<sub>2</sub>/AsGeSeS 다층박막에서의 편광 홀로그래피 회절효율 특성
나선웅,여철호,정홍배,김종빈 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.12
We have carried out two-beam interference experiments to form holographic gratings on As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ single layer, Ag/As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ multi-layer. In this study, holographic gratings have been formed using He-Ne laser(632.8nm) under different polarization combinations(intensity polarization holography, phase polarization holography). The diffraction efficiency was obtained by the +lst order intensity. The maximum diffraction efficiency of As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ single layer, As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ and MgF$_2$/As$_{40}$ Se$_{15}$ S$_{35}$Ge$_{10}$ multi-layer were 0.8%, 1.4% and 3.1% under intensity polarization holography, respectively.
Ag 편광 광도핑에 의한 칼코게나이드 박막의 광유기 이방성(PA)
장선주,여철호,박정일,정홍배 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.6
It was known that chalcogenide glasses have the superior property of the photoinduced anisotropy(PA). In this study we observed the phenomenon of Ag polarized-photodoping in chalcogenide As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ and the double-layer of Ag doped As$_{40}$ /Ge$_{10}$/Se$_{15}$ /S$_{35}$ thin film using the irradiation with the polarized He-Ne laser light. The Ag polarized-photodoping results in reducing the time of saturation anisotorpy and increasing the sensitivity of linearly anisotropy intensity up to maximum 220% The Ag polrized-photodoping shows improvement of the photoinduced anisotropy property in polarized photodoping of the chalcogenide thin film. It will offer lots of information for the photodoping mechanism and analysis of chalcogenide thin film.in film.ilm.