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Numerical Modeling for GaN Deposition by MOCVD: Effects of the Gas Inlet
양원균,주정훈 한국진공학회 2014 Applied Science and Convergence Technology Vol.23 No.3
GaN deposition equipment and processes for the fabrication of white LEDs (Light Emitting Diode) using MOCVD (Metal Organic Chemical Vapor Deposition) were numerically modeled to analyze the effects of a reactive gas introduction strategy. The source gases, TMGa and NH3, were injected from a shower head at the top of the chamber; the carrier gases, H2 or N2, were introduced using two types of injection structures: vertical and horizontal. Wafers sat on the holder at a radial distance between 100 mm and 150 mm. The non-uniformity of the deposition rates for vertical and horizontal injection were 4.3% and 3.1%, respectively. In the case of using H2 as a carrier gas instead of N2, the uniform deposition zone was increased by 20%.
Heat Transfer Analysis in ICP-Assisted Bipolar Pulsed DC Magnetron Sputtering
양원균,주정훈 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.3
An AI-doped ZnO thin film is deposited by using a bipolar pulsed de magnetron sputtering method. An internal inductively coupled plasma (ICP) was used as a secondary plasma source and could produce a better quality thin film due to the high ionization and the low-energy ion bombardment. Polymer substrates for display products and solar cells require a low deposition temperature, a high deposition rate and high quality. High-density plasmas, such as an ICP, can heat a polymer substrate by ion bombardment, a flux of electron energy and heat released by recombination of ions at the substrate's surface. We developed a numerical model for heat transfer from the plasma and confirmed it by direct measurements with thermocouples. The sputtering Ar plasma raised the substrate temperature by 132 within 10 min for a pulsed de power of 200 W at 50 kHz. Major sources of heating were ion recombination and kinetic impact. When the ion recombination coefficient of 0.1 was used, the modeling result, 137 , was in good agreement with the measured value, a temperature rise of 140 for an ICP power of 200 W at 2 MHz.
직류와 양극성 펄스직류에 의한 스퍼터링시 타겟 표면의 온도 분포와 그 영향
양원균,주정훈,김영우,이봉주,Yang, Won-Kyun,Joo, Jung-Hoon,Kim, Young-Woo,Lee, Bong-Ju 한국진공학회 2010 Applied Science and Convergence Technology Vol.19 No.1
We measured the temperature of target surface inducing by various physical phenomenon on magnetron sputtering target and confirmed the possibilities if the temperature distribution could affect plasma and deposited thin film. The target of magnetron sputtering has two types: round type and rectangular type. In a rectangular target, the concentrated discharge area by corner effect by magnetic field and non-uniform erosion of target are generated. And we found the generation of non-uniform temperature distribution on the target surface from this. This area was $10{\sim}20^{\circ}C$ higher than non-sputtering area. And if particles are generated during sputtering process, they were $20^{\circ}C$ higher than the area where is higher than non-sputtering area. These effects result in non-uniformity of thin films, crack of ceramic target, and shortening target life by non-uniform erosion. 마그네트론 타겟에서 일어나는 다양한 물리적 현상에 의한 결과로 인해 발생하는 타겟 표면의 온도를 측정함으로써 그 분포가 플라즈마, 혹은 증착되는 박막에 영향을 줄 수 있는 가능성을 분석하였다. 마그네트론 스퍼터링의 타겟은 크게 원형 타겟과 사각 타겟으로 구분되는데, 사각 타겟에서는 자기장에 의한 corner effect 등에 의해 전자 집중 방전 영역이 발생하고 그것에 의해 타겟 표면에서 불균일한 온도분포가 생성됨을 확인했다. 국부적으로 온도가 높게 올라가는 지역은 비스퍼터링 지역에 비해 $10{\sim}20^{\circ}C$ 정도 높았으며, 스퍼터링 공정 시 문제점 중에 하나인 particle이 발생하면 그 부분에서 온도가 $20^{\circ}C$ 정도 더 상승함을 알 수 있었다. 이런 영향은 증착되는 박막의 균일도에도 적지 않은 영향을 주었으며 세라믹 타겟의 경우, 균열의 원인이 될 수 있고, 불균일한 타겟 침식으로 타겟의 수명을 단축시키는 문제를 유발하기도 한다.