$CdS_{1-x}Se_{x}$ 광도전 박막의 전기-광학적 특성연구

양동익,신영진,임수영,박성문,최용대,Yang, D.I.,Shin, Y.J.,Lim, S.Y.,Park, S.M.,Choi, Y.D. 한국센서학회 1992 센서학회지 Vol.29 No.3

본 연구는 $CdS_{1-x}Se_{x}$의 박막을 제작하고 그 전기-광학적인 특성을 조사한 것이다. 전자선 가열증착법을 이용하여 $CdS_{1-x}Se_{x}$을 알루미나 기판위에 $1.5{\times}10^{-7}$ torr의 압력, 4kV의 전압, 2.5 mA의 전류 그리고 기판온도를 $300^{\circ}C$로 유지하여 증착하였다. 증착된 $CdS_{1-x}Se_{x}$ 박막은 X-ray 회절 실험을 통하여 볼 때, 육방정계의 결정구조를 가지며 성장되었다. $CdS_{1-x}Se_{x}$ 도전막은 특정분위기에서 $550^{\circ}C$, 30분간 열처리함으로써 높은 광전도성을 나타내게 되었다. 또한 Hall 효과, 광전류 스펙트럼, 감도, 최대 허용 전력과 응답시간 등을 조사하였다. We report the crystal growth and the electro-optic characteristics of $CdS_{1-x}Se_{x}$ thin films. $CdS_{1-x}Se_{x}$ thin films wire deposited on the alumina plate by electron beam evaporation technique in pressure of $1.5{\times}10^{-7}$ torr, voltage of 4kV, current of 2.5mA and substrate temperature of $300^{\circ}C$. The deposited $CdS_{1-x}Se_{x}$ thin films were proved to be a polycrystal with hexagonal structure through X-ray diffraction patterns. $CdS_{1-x}Se_{x}$ photoconductive films showed high photoconductivity after annealing at $550^{\circ}C$ for 30 minutes. And the films have been investigated the Hall effect, photocurrent spectra, sensitivity, maximum allowable power dissipation and response time.

온도 함수로서의 Energy Level 에 關하여

양동익 全北大學校 師範大學 1976 사대논문집 Vol.2 No.-

In the concepts of guantum mechanics, the energy levels are discontinuous. When energy level ε related to temperature T, an energy contained in a Boltzmann factor was expressed as a function of temperature. It was showed by G.S.Rushbrooke that it was a Helmholtz free energy. But the object of this paper is to show by using Asymptotic method that energy level ε depends on temperature T when there are diffusions in the energy levels of regular solution. Moreover, it was evident, physically, that implicit in these postulates (ⅰ) (ⅱ) are the assumptions. As a result, I got the increasing of entropy like an equation (6). This was quite corresponded to the increasing of entropy which G.S.Rushbrooke showed. It appears that if an energy level ε occurring in a partition function, or Boltzmann factor depends on the temperature T, then the expression e^-9/kT should always be replaced by e^ø(T)/kT where ø(T) is the Helmholtz free energy connected with the energy ε(T) through the Gibbs-Helmholtz equation. This is necessary in order that the resulting equations may be thermodynamically correct.

Nematic 액정의 전기광학적 특성 연구

양동익 全北大學校 1977 論文集 Vol.19 No.-

In this report, the electro-optical properties of Nematic liquid crystal (MBBA) are described by Sandwich cells. When the cell is set between crossed polarizers, the optical transmission is very low at any voltage V below the threshold voltage V_th. In the case of V>V_th, it shows nearly sinusoidal variation with V. The threshold voltage V_th decreases slowly as temperature rises up to 40℃ and activation energy is calculated as 0.25 ev.

(Zn,Cd)S:Ag 형광체의 발광특성에 관한 연구 : I. Flux 변화에 의한 고찰

양동익,신영진,윤희중 全北大學校 科學敎育硏究所 1980 과학과 과학교육 논문지 Vol.5 No.-

The photoluminescent(Zn, Cd)S: Ag phosphors are prepared by firing at 750℃, 850℃, 950℃ and 1050℃ in N_2 gas of atmospheric pressure for an hour. They are doped with(1) an activator Ag_2S(2) both an activator Ag_2S and each different flux; NaCl, NH_4C1, NH_4Br. The crystal structure of(Zn, Cd)S: Ag phosphors powder is the mixed phase of cubic and hexagonal. The photoluminescent cells are made with these phosphors and their emission spectra are measured at room temperature after these materials are excited with 3650A˚ (3.4eV) light. All these fluxes are found out to help the doping of the impurity energy level. The following results are also observed about (Zn, Cd)S: Ag phosphors. (1) Sufficient concentration of flux is enough with10^-2mole/mole(Zn, Cd)S. (2) (Zn, Cd)S: Ag phosphors with flux NH_4Br is stronger intensity than that of the orthers. (3) Variation of PL intensity of (Zn, Cd)S: Ag phosphors against gr molecule of flux seems to increase with logarithmic function like.

WKB-Type 改良化의 調和振動子에 關한 應用

梁東翊 全北大學校 1970 論文集 Vol.12 No.-

The method of approximating solution of the one-dimensional Schro¨dinger equation closely resembles the usual WKB-Type approximation. In this parer, the WKB-Type approximation was shown to be quite useful for many wave functions at some distance from the classical turning point. It is well known that Certain results of using connection formulas were described. Thus, a) a good WKB approximation is obtained, if the arbitrary is chosen to resembles the Schro¨dinger equation to be solved b) the theory of Miller & Good was applied to a consideration of the perturbation theory, for both are similar c) the appliation of this method to the perturbation theory was compared to the result obtained by first order perturbation theory, to determine which method gave better results d) the motion equation of the harmonic oscillator was determined and compared with those of the first order perturbation theory.

Rare earth element(Er,Pr)를 doping한 ZnS:Ag 螢光體의 PL現象에 關한 硏究

양동익,신영진,이용택 全北大學校 科學敎育硏究所 1981 과학과 과학교육 논문지 Vol.6 No.-

The photoluminescent ZnS: Ag(Er, Pr) phosphors are prepared by firing at 850℃ in N, gas of atmospheric pressure for an hour. They are doped with (1) an activator Ag_2S (2) both sensitizer Ag_2S and each different activators Ercl_3, Prcl_3. The crystal structure of ZnS: Ag(Er, Pr) phosphor powder is the mixed phase of cubic and hexagonal. The photoluminescent cells are made with those phosphors and their emission spectra are measured at room temperature after these materials are excited with 3650 A˚(3, 4eV) light. The following results are also observed about ZnS: Ag (Er Pr) phosphors. (1) PL spectrum intensity of ZnS: Ag phosphors doped Er, Pr as ratio 10^-2 mole/mole ZnS is stronger than that of ZnS phosphors doped Er, Pr as ratio 10^-4 mole/mole ZnS. (2) As increase addional ratio of rare earth element, PL spectral peak of ZnS: Ag phosphor moved in short wave length. (3) PL spectrum intensity of ZnS: Ag phosphors are apeared differently for various impurity (Ag, Er, Pr).

(Zn.Cd)S Phosphor film의 발광현상에 관한 연구

양동익 全北大學校 1982 論文集 Vol.24 No.-

(Zn, Cd) S : Ag phosphor films were prepared by using electron beam evaporation technique in vacuum of 1.5×10 exp (-7) torr, and subsequent annealing at about 600℃ for 30-40 min. in argon gas. Thickness of the films is a few microns and the grain size after annealing is of the same order in its linear dimension. The profiles of PL and CL spectra of (Zn, Cd) S : Ag phosphor films show Gaussian type curves at room temperature. The spectrum peak shifts from blue (wavelength 475mμ) to red (wavelength 654mμ) as the content of CdS increases. The shift of PL and CL spectrum peak of mixed phosphors is due to the difference in the energy band gap and energy level of Ag luminescent center, depending on their mixing ratios. Energy band gap of the films varies in accord with Thompson's formula. The pure Zns and CdS films have cubic and hexagonal structure respectively. The mixed (Zn, Cd) S : Ag films prove to be predominantly hexagonal and obey Vegard's law. Those of smaller CdS content are poorly crystalline but show highly efficient luminescence.

환경교육에 관한 연구방법의 체계화

양동익,박승태,이국행,이광호,이기종 全北大學校 科學敎育硏究所 1981 과학과 과학교육 논문지 Vol.6 No.-

This study was investigated the environmental activities of the international and domestic situations for environmental education to specify the systematic analysis on the research tools for its education related to science fields. The concepts of environmental education were chosen on water, air and energy which they are referred to biological concentration of pollutants in water system, air quality diffusion by means of Gaussian plume model and solar fuels in the experimental model. The results of this study are as follows: 1. Mathematical model of the biological concentrationof pollutants in the water ecosystem is modified, and accumulation of pollutant can be calculated by the equation C_i=MC(l-e^-1/Ti) and shows the practical data of the DDT concentration. 2. The calculation of amount of pollutants in the air corresponding to the stable atmospheric index and topograghic levels is reviewed by the Gaussian plume model on air quality diffusion, and practical application of SO_2 gas concentration in Jeonju area is expressed by Le Blancs' IAP.(index of atmospheric purity). 3. Solar fuel model related to energy is rearranged and calculated solar power(E), maximum photochemical power yield (Y), their efficiencies, and efficiency of solar cells, which is made by Institute of Science education of Jeonbug N. University. 4. Questionnaire method is used to collection of data related to knowledges, inquiry skills and values on environmental education of secondary school teachers. The scores of them are measured by path analysis.

CdS_(1-x)Se_x 광도전 박막의 전기-광학적 특성연구

양동익,신영진,임수영,박성문,최용대 全北大學校 基礎科學硏究所 1994 基礎科學 Vol.16 No.-

본 연구는 CdS_1-XSe_X의 박막을 제작하고 그 전기-광학적인 특성을 조사한 것이다. 전자선 가열증착법을 이용하여 CdS_1-XSe_X을 알루미나 기판위에 1.5× 10 exp (-7) torr의 압력, 4kV의 전압, 2.5mA의 전류 그리고 기판온도를 300℃로 유지하여 증착하였다. 증착된 CdS_1-XSe_X 박막은 X-ray 회절 실험을 통하여 볼 때, 육방정계의 결정구조를 가지며 성장되었다. CdS_1-XSe_X 도전막은 특정분위기에서 550℃, 30분간 열처리함으로써 높은 광전도성을 나타내게 되었다. 또한 Hall 효과, 광전류 스펙트럽, 감도, 최대 허용 전력와 응답시간 등을 조사하였다. We report the crystal growth and the electro-optic characteristics of CdS_1-XSe_X thin films. CdS_1-XSe_X thin films were deposited on the alumina plate by electron beam evaporation technique in pressure of 1.5× 10 exp (-7) torr, voltage of 4kV, current of 2.5 mA and substrate temperature of 300℃. The deposited CdS_1-XSe_X thin films were proved to be a polycrystal with hexagonal structure through X-ray diffraction patterns. CdS_1-XSe_X photoconductive films showed high photoconductivity after annealing at 550℃ for 30 minutes. And the films have been investigated the Hall effect, photocurrent spectra, sensitivity, maximum allwable power dissipation and response time.

광센서개발을 위한 CdSe:Ag 광도전 박막의 전기-광학적 성질

양동익,최용대,임수영,박성문 경북대학교 센서기술연구소 1991 센서技術學術大會論文集 Vol.2 No.1

전자빔 증착기술을 이용하여 CdSe:Ag 박막을 성장하고 그 전기적,광학적인 성질을 조사하였다. X-ray 회절무늬를 .통해서 결정구조는 육방정계이고 공기, Ar,Cd,Cu 분위기에서 550℃로 30분간 열처리한 결과 grain size가 1μm 정도로 성장되었다. Van der Pauw 방법으로 구한 Hall data로 부터 CdSe:Ag 박막은 n형 반도체이고상온에서의 carrier 농도가 7×10^(12) cm^(-3)이고 이동도는 1.6X10^(9)cm^(2)/V·sec 정도임을 알았다. CdSe:Ag 박막의 광발광과 광전류를 즉청하고. 광전류(Pc)와 암전류(dc)의 비(pc/dc)를 조사한 결과 Cd 분위기에서 열처리한 시료의 값이 크다는 것을 알았다. We report the crystal growth and the electro-optic characteristics of CdSe thin films activated by silver. CdSe:Ag thin films were deposited by using electron beam evaporation(EBE) technique in vacuum 1.5x10^(-7)torr, voltage of 4KV, current of 2.5mA and substrate temperature of 250℃. This CdSe:Ag thin films was proved to be a polycrystal with hexagonal structure through X-ray diffraction method. CdSe:Ag photoconductive films prepared by EBE method show high photoconductivity after annealing at 550℃ for 30 minutes in Cd vapor. And the splitting of valence band in photocurrent peak analyses due to crystal field effect. We measured the photocurrent spectra and photoluminescence spectra, and compared the photocurrent(pc) with dark current(dc), respectively, in order to obtain the high sensitive CdSe photoconductors.