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MOCVD 더스트 합성용액으로부터 D2EHPA를 이용한 In의 선택적 용매추출
임병용,이찬기,박재량,박경수,심종길,박정진,Im, Byoungyong,Swain, Basudev,Lee, Chan Gi,Park, Jae Layng,Park, Kyung-Soo,Shim, Jong-Gil,Park, Jeung-Jin 한국자원리싸이클링학회 2015 資源 리싸이클링 Vol.24 No.5
In, Ga, Fe, Al이 함유되어 있는 혼합용액으로부터 In을 분리하기 위해 D2EHPA를 이용한 용매추출 연구를 수행하였으며, In의 추출에 대한 수상의 HCl 및 추출제 농도 효과를 확인하였다. In과 Ga의 추출률은 HCl 농도의 감소에 따라 증가하였지만, Fe와 Al의 추출률에는 큰 영향을 미치지 않았다. In과 Ga의 분리인자($D_{In}/D_{Ga}$)는 1.0 M D2EHPA, 0.5 M HCl조건에서 115로 나타났다. 즉, D2EHPA는 혼합용액으로부터 In을 분리하는 추출제로 적합하며, 추출률 및 분리인자는 HCl 및 추출제의 농도 조절을 이용하여 조절할 수 있다. The separation of In from the synthesis solution with Ga, Fe, and Al has been studied by the solvent extraction using D2EHPA as an extractant. The effects as a function of the concentration of extractant and HCl on the extraction of In were investigated. The extraction of In and Ga increased with decreasing HCl concentration, but that of Fe and Al was independent. Separation factor between In and Ga of 115 was obtained at 1.0 M D2EHPA in the presence of 0.5 M HCl of feed solution. Consequently, this study shows that D2EHPA is suitable extractant for In extraction from the synthesis solution. Extraction efficiency and separation factor could be increased by controlling HCl and extractant concentration.
박경수,강이승,이찬기,홍현선,심종길,박정진,Park, Kyung-Soo,Swain, Basudev,Kang, Lee Seung,Lee, Chan Gi,Hong, Hyun Seon,Shim, Jong-Gil,Park, Jeung-Jin 한국분말야금학회 2014 한국분말재료학회지 (KPMI) Vol.21 No.3
Leaching of MOCVD dust in the LED industry is an essential stage for hydro-metallurgical recovery of pure Ga and In. To recover Ga and In, the leaching behavior of MOCVD scrap of an LED, which contains significant amounts of Ga, In, Al and Fe in various phases, has been investigated. The leaching process must be performed effectively to maximize recovery of Ga and In metals using the most efficient lixiviant. Crystalline structure and metallic composition of the raw MOCVD dust were analyzed prior to digestion. Subsequently, various mineral acids were tested to comprehensively study and optimize the leaching parameters such as acidity, pulp density, temperature and time. The most effective leaching of Ga and In was observed for a boiling 4 M HCl solution vigorously stirred at 400 rpm. Phase transformation of GaN into gallium oxide by heat treatment also improved the leaching efficiency of Ga. Subsequently high purity Ga and In can be recovered by series of hydro processes.
MOCVD dust로부터 Ga 금속 회수를 위한 전해채취 연구
임병용(Byoungyong Im),이지은(Jieun Lee),이찬기(Chan Gi Lee),엄성현(Sunghyun Uhm),박경수(Kyung-Soo Park),심종길(Jong-Gil Shim),박정진(Jeung-Jin Park) 한국에너지기후변화학회 2016 에너지기후변화학회지 Vol.11 No.1
Recovery of Ga from highly crystalline GaN of MOCVD dust by hydro-metallurgical has been investigated. Because of high crystallinity, the GaN is highly stable in the MOCVD dust, which is extremely difficult to leach out the Ga by ordinary acidic or alkaline media. For easier leaching, GaN was converted to leachable NaGaCO₂ by a solid-solid reaction between GaN-Na₂CO₃ through heat treatment at 800 °C. The heat treated materials was leached using 4 M HCl with a pulp density of 100 g/L at 70 °C. Above 99% of leaching efficiency was achieved using 4 M HCl. Followed by electrowinning was applied for recovery of Ga from leach solutions. Electrowinning reveals that, Faradic efficiency was increased with increasing pH. Ga with 97% purity can be obtained at all pH ranges (pH 0.5-2). In the electrowinning of Ga from HCl media under investigated condition, the purity of recovered Ga is independent of leach solution pH.
LED 공정스크랩으로부터 Ga 회수를 위한 침출 거동 연구
박경수 ( Kyung Soo Park ),( Basudev Swain ),강이승 ( Lee Seung Kang ),이찬기 ( Chan Gi Lee ),엄성현 ( Sung Hyun Uhm ),홍현선 ( Hyun Seon Hong ),심종길 ( Jong Gil Shim ),박정진 ( Jeoung Jin Park ) 한국공업화학회 2014 공업화학 Vol.25 No.4
LED scraps consisting of highly crystalline GaN and their leaching behavior are comprehensively investigated for hydro-metallurgicalrecovery of rare metals. Highly stable GaN renders the leaching of the LED scraps extremely difficult in ordinaryacidic and basic media. More favorable state can be obtained by way of high temperature solid-gas reaction of GaN-Na2CO3powder mixture, ball-milled thoroughly at room temperature and subsequently oxidized under ambient air environment at1000-1200 ℃ in a horizontal tube furnace, where GaN was effectively oxidized into gallium oxides. Stoichiometry analysisreveals that GaN is completely transformed into gallium oxides with Ga contents of ~73 wt%. Accordingly, the oxidized powdercan be suitably leached to ~96% efficiency in a boiling 4 M HCl solution, experimentally confirming the feasibility ofGa recycling system development.