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Li과 B이 포함된 폴리머 전구체의 열처리에 의한 Li<sub>7</sub>La<sub>3</sub>Zr<sub>2</sub>O<sub>12</sub> 고체전해질의 소결조제 합성
신란희,류성수,Shin, Ran-Hee,Ryu, Sung-Soo 한국분말야금학회 2018 한국분말재료학회지 (KPMI) Vol.25 No.2
In this study, the compound $Li_3BO_3$ (LBO) is intended to be prepared by a polymeric complex method as a sintering aid for the densification of $Li_7La_3Zr_2O_{12}$ (LLZ) solid electrolyte. A polymeric precursor containing Li and B is heat-treated in an air atmosphere at a temperature range between $600^{\circ}C$ and $800^{\circ}C$. Instead of LBO, the compound $Li_{2+x}C_{1-x}B_xO_3$ (LCBO) is unexpectedly synthesized after a heat-treatment of $700^{\circ}C$. The effect of LCBO addition on sintering behavior and ion conductivity of LLZ is studied. It is found that the LCBO compound could lead to significant improvements in the densification and ionic conductivity of LLZ compared to pure LLZ. After sintering at $1100^{\circ}C$, the density of the LLZ-12wt%LBO composite is $3.72g/cm^3$, with a high Li-ion conductivity of $1.18{\times}10^{-4}Scm^{-1}$ at $28^{\circ}C$, while the pure LLZ specimen had a densify of $2.98g/cm^3$ and Li-ion conductivity of $5.98{\times}10^{-6}Scm^{-1}$.
신란희,오설희,이지혜,조윌렴,장성훈,한문섭,Sukgeun Choi 한국물리학회 2013 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.63 No.11
Gallium-ferrite thin films were studied to investigate the effects of the oxygen annealing conditionson the electrical properties. Ga0.8Fe1.2O3− thin films were prepared by using a sol-gel methodunder different oxygen partial pressures. The structural properties of the films were studied byusing X-ray diffraction. X-ray photoemission spectra of the core-levels of Ga, Fe, and O in the filmswere examined. The dielectric functions of the films were measured at energies from 0.73 to 6.45 eVby using spectroscopic ellipsometry. The Fe valence was changed by the oxygen vacancies, whichare dominantly responsible for the dielectric function and the charge conduction. Remarkably, theleakage current of the films annealed under intermediate oxygen atmospheric conditions showedthe lowest values. In the film, the oxygen vacancies, were indirectly estimated by using the ratioof Fe2+ to Fe3+, are important to reduce the leakage current, which can be explained by using aspace-charge-limited model with shallow traps.
냉동 후막 성형에 의한 다공성 Al<sub>2</sub>O<sub>3</sub> 필름 제조
신란희,구준모,김영도,한윤수,Shin, Ran-Hee,Koo, Jun-Mo,Kim, Young-Do,Han, Yoon-Soo 한국분말야금학회 2015 한국분말재료학회지 (KPMI) Vol.22 No.6
Porous thick film of alumina which is fabricated by freeze tape casting using a camphene-camphor-acrylate vehicle. Alumina slurry is mixed above the melting point of the camphene-camphor solvent. Upon cooling, the camphene-camphor crystallizes from the solution as particle-free dendrites, with the $Al_2O_3$ powder and acrylate liquid in the interdendritic spaces. Subsequently, the acrylate liquid is solidified by photopolymerization to offer mechanical properties for handling. The microstructure of the porous alumina film is characterized for systems with different cooling rate around the melting temperature of camphor-camphene. The structure of the dendritic porosity is compared as a function of ratio of camphene-camphor solvent and acrylate content, and $Al_2O_3$ powder volume fraction in acrylate in terms of the dendrite arm width.
테잎캐스팅을 이용한 전고체전해질 Li<sub>7</sub>La<sub>3</sub>Zr<sub>2</sub>O<sub>12</sub> 후막 제조
신란희,손삼익,류성수,김형태,한윤수,Shin, Ran-Hee,Son, Samick,Ryu, Sung-Soo,Kim, Hyung-Tae,Han, Yoon-Soo 한국분말야금학회 2016 한국분말재료학회지 (KPMI) Vol.23 No.5
A thick film of $Li_7La_3Zr_2O_{12}$ (LLZO) solid-state electrolyte is fabricated using the tape casting process and is compared to a bulk specimen in terms of the density, microstructure, and ion conductivity. The final thickness of LLZO film after sintering is $240{\mu}m$ which is stacked up with four sheets of LLZO green films including polymeric binders. The relative density of the LLZO film is 83%, which is almost the same as that of the bulk specimen. The ion conductivity of a LLZO thick film is $2.81{\times}10^{-4}S/cm$, which is also similar to that of the bulk specimen, $2.54{\times}10^{-4}S/cm$. However, the microstructure shows a large difference in the grain size between the thick film and the bulk specimen. Although the grain boundary area is different between the thick film and the bulk specimen, the fact that both the ion conductivities are very similar means that no secondary phase exists at the grain boundary, which is thought to originate from nonstoichiometry or contamination.
저온 GaN의 성장 온도에 따른 에피택셜 GaN의 stress relaxation 효과
이승훈,이주형,오누리,이성철,박형빈,신란희,박재화,Lee, Seung Hoon,Lee, Joo Hyung,Oh, Nuri,Yi, Sung Chul,Park, Hyung Bin,Shin, Ran Hee,Park, Jae Hwa 한국결정성장학회 2022 한국결정성장학회지 Vol.32 No.3
이종 기판과 GaN의 물성 차이로 인해 발생하는 결함을 제어하기 위한 다양한 방법 중 동종 물질을 완충층으로 사용하는 LT-GaN 방법을 사용하여 완충층과 성장 온도의 상관성을 자체 제작한 성장 장비를 통해 확인하고자 하였다. 성장 온도에 따라 표면에 형성된 LT-GaN 결정성에 변화가 있었으며, annealing 후 LT-GaN가 나타내는 결정성에 따라 epiGaN의 응력 완화 효과에 차이점이 있었다. 반면 LT-GaN의 높은 결정성은 다결정을 형성하는 원인으로 작용하여 그 위에 성장하는 epi-GaN의 결정질을 저해하는 결과를 유발하였다.