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      • SCOPUSKCI등재

        DC Reactive Magnetron Sputtering법에 의한 Ti-Al-V-N 박막의 성장거동

        손용운,정인화,이영기,Sohn, Yong-Un,Chung, In-Wha,Lee, Young-Ki 한국재료학회 1999 한국재료학회지 Vol.9 No.7

        Ti-6Al-4V 합금을 타겟트로 사용하여 유리 기판위에 dc reactive magnetron sputtering법으로 $N_2$/(Ar+N_2)$ 비, 기전력 및 시간등의 여러 가지 증착 조건에서 Ti-6Al-4V-N 필름을 증착하였고, 각각의 증착 조건에 따른 결정구조 및 우선방위 거동은 X-선 회절장치를 사용하여 조사하였다. Ti-6Al-4V-N 필름은 본질적으로 fcc 결정구조의 $\delta$-TiN에 Al과 V이 결함으로서 고용된 변형된 형태의 $\delta$-TiN구조이고, TiN의 격자상수(4.240 )보다 작은 값을 나타내었는데, 이는 Ti(1.47 )에 비하여 상대적으로 원자반경이 작은 Al(1.43 )과 V (1.32 )이 Ti의 격자위치에 치환된 결과이다. 그리고 Ti-6Al-4V-N 필름은 $_N2$가스 분압이 감소됨에 따라 (111) 우선방위 성장거동을 하였을 뿐만아니라 증착시간의 증가에 따라 뚜렷한 (111) 우선방위 성장거동을 나타내었다. 그리고 증착속도 및 결정입도의 거동 또한 여러 가지 증착 조건에 크게 의존한다 Ti-6Al-4V-N films have been grown onto glass substrates by dc reactive magnetron sputtering from a Ti-6Al-4V-N alloy target at different nitrogen partial pressure, input powers and sputtering times. The influence of various sputtering conditions on structural properties of Ti-6Al-4V-N films was investigated by measuring their X-ray diffraction. The quaternary Ti-6Al-4V-N film is crystallizing in a face centered cubic TiN structure, the lattice parameter is smaller than the TiN parameter as titanium atoms of the TiN lattice are replaced by aluminum and vanadium atoms. The films show the (111) preferred orientation and the (111) peak intensity decreases as the nitrogen partial pressure is increased, but the intensity increases as the sputtering time is increased. The deposition rate and the grain size are alto related with the variation of various sputtering conditions.

      • KCI등재

        직접질화법에 의한 (Ti , Al)N계 복합질화물의 합성 (1)

        손용운,이영기,황연,조영수,김석윤 ( Yong Un Sohn,Young Ki Lee,Yeon Hwang,Young Soo Cho,Suk Yoon Kim ) 한국열처리공학회 1995 熱處理工學會誌 Vol.8 No.3

        TiN and AlN are ceramic materials with mechanical and chemical properties for use in structural applications at elevated temperature. The purpose of this research is to develop the technology for the synthesis of (Ti. Al)N power, which shows simultancously the excellent properties of TiN and AlN, from the mixed powder(Ti_(0.25) Al_(0.75), Ti_(0.5) Al_(0.5) and Ti_(0.75) Al_(0.25)) by the direct nitriding method. The effects of variables such as temperature, mixing ratio of Al to Ti in raw material were investigated. The(Ti, Al)N powder can be easily synthesized from the mixed powder by the direct nitriding method. Among the mixed powdres, the rutriding behavior decreased with increasing the ratio of Al to Ti. This behavior is well explained by the nitriding mechanism presented in this research.

      • KCI등재

        직류 및 고주파 마그네트론 스퍼터링법으로 증착한 Ti - Al - V - N 박막의 특성

        손용운(Yong Un Sohn),정인화(In Wha Chung),이영기(Young Ki Lee) 한국열처리공학회 2000 熱處理工學會誌 Vol.13 No.6

        The Ti-Al-V-N films have been deposited on various substrates by d.c and r.f reactive magnetron sputtering from a Ti-6Al-4V alloy target in mixed Ar-N₂discharges. The films were investigated by means of XRD, AES, SEM/EDX, microhardness, TG and scratch test. The XRD and SEM results indicated that the films were of single B1 NaCl phase having dense columnar structure with the (111) preferred orientation. The composition of Ti-Al-V-N film was the Ti-7.1Al-4.3V-N(wt%) films. Adhesion and microhardness of Ti-Al-V-N films deposited by r.f magnetron sputtering method were better than those deposited by d.c magnetron sputtering method. The anti-oxidation properties of Ti-Al-V-N films were also superior to that of Ti-N film deposited by the same deposition conditions.

      • KCI등재

        직접질화법에 의한 (Ti , Al)N계 복합질화물의 합성 (2)

        조영수 ( Young Soo Cho ),이영기 ( Young Ki Lee ),손용운 ( Yong Un Sohn ),박경호 ( Kyong Ho Park ),김석윤 ( Seok Yoon Kim ) 한국열처리공학회 1996 熱處理工學會誌 Vol.9 No.3

        The purpose of this research is to develop the technology for the synthesis of (Ti, Al)N powder, which shows simultaneously the excellent properties of TiN and AlN, from the Ti-Al intermetallic compounds by the direct nitriding method. The effects of variables such as temperature, Ti-Al intermetallic compounds (TiAl₃, TiAl and Ti₃Al) were investigated by TG, XRD and SEM. The (Ti, Al)N powder can be easily synthesized from the intermetallic compounds by the direct nitriding method. Among the intermetallic compounds, the nitriding behavior increased with TiAl>Ti₃Al>TiAl₃, as the difference of diffusion coefficient for nitrogen in each materials. The ternary nitride such as Ti₂AlN and Ti₃Al₂N₂ can be synthesized by the direct nitriding method, although the ternary nitride coexist with TiN and AlN. The ternary nitrides are stable below 1400℃, but these are gradually decomposed into TiN and AlN above 1400℃.

      • KCI등재

        금속티타늄분말의 질화반응과 산화반응에 관한 연구

        이영기,손용운,조영수,김용석,김석윤 ( Young Ki Lee,Yong Un Sohn,Young Soo Cho,Yong Seog Kim,Suk Yoon Kim ) 한국열처리공학회 1995 熱處理工學會誌 Vol.8 No.2

        The nitridation kinetics of titanium powder were studied by isothermal and non-isothermal (dynamic) methods in high purity nitrogen under 1 atm pressure. For the comparison with nitridation, the oxidation kinetics of titanium powder were also studied in dry oxygen at 1 atm pressure. An automatic recording electrobalance was used to measure the weight gain as a function of time and temperature. For the reaction with nitrogen, the nitride was formed at over 700℃. The reaction with nitrogen followed the parabolic rate law, and the activation energy was calculated to be 31 ㎉/㏖ in the isothermal method (above 900℃). The non-stoichiometric TiNx has been synthesized by the nitridation at a proper temperature and time, followed by the homogenizing treatment above 1100℃. In comparison with the stoichiometric TiN_(1.0) and the non-stoichiometric TiNx(TiN_(0.5) and TiN_(0.65)), the hot oxidation characteristics of the former is superior to that of the latter. However, both non-stoichiometric nitrides make little difference in the hot oxidation characteristics.

      • KCI등재

        (Ti1-xAlx)N 계 질화물의 소결특성에 미치는 Co , CO - Ti 금속결합제의 영향

        이영기,손용운 ( Young Ki Lee,Young Un Sohn ) 한국열처리공학회 1998 熱處理工學會誌 Vol.11 No.3

        N/A The purpose of this research is to investigate the effects of Co, Co-Ti addition on the sintering characteristic of (Ti_(1-x)Alx)N material synthesized by the direct nitriding method for a application as a cermet material. The observed shrinkage rates of (Ti_(1-x)Alx)N pellets increase with the additive (Co, Co-Ti) content, temperature and time, and also the pellets with the same additive content exhibit the shrinkage behavior that depends on the Ti/Al ratio. However, although the shrinkage rates in this study is the mast higher (36%), the density of the sintered (Ti_(1-x)Alx)N pellet is below 80% density in theory because of the partial segregation and the dense band defect of AlCo compound. Consequentely, it is considered that Co was not effective as a binder material because the wettability of liquid Co metal on (Ti_(1-x)Alx)N materials is poor, In (Ti_(1-x)Alx)N with Ti-Co additive, the stoichiometric TiN is transformed by the under-stoichiometric TiNx(x<1.0) during sintering, leading to the good properties such as hardnees and hot oxidation.

      • KCI등재

        상호확산법에 의한 (Ti , Al)N계 복합질화물의 합성

        이영기,김정열,김동건,손용운 ( Young Ki Lee,Jung Yeul Kim,Dong Kun Kim,Yong Un Sohn ) 한국열처리공학회 1997 熱處理工學會誌 Vol.10 No.2

        TiN and AlN are ceramic materials with extensive applications due to its excellent mechanical and chemical properties at elevated temperature. The purpose of this research is to develop the method for the synthesis of ternary nitride powder, titanium-aluminum-nitrogen system, which have an excellent property of both TiN and AlN. The ternary nitride such as Ti₃AlN, Ti₂AlN and Ti₃Al₂N₂can be synthesized by the interdiffusion nitriding method in Ar gas, however, the ternary nitride coexist with TiN, AlN, Ti₃Al and α-Ti. The ternary nitride are stable below 1400℃ but these are gradually decomposed into TiN, Ti₃Al and AlN above 1400℃. The thermal oxidation characteristics of the Ti-Al-N compound synthesized by the interdiffusion nitriding method is superior to that of the TiN+AlN mixed powder, and the oxidation for both materials show the differential behaviors.

      • KCI등재

        반응성 마그네트론 스퍼터링법으로 제조한 Ti-Al-V-N 박막의 미세조직 및 부착특성에 관한 연구

        손용운,이영기 한국열처리공학회 1999 熱處理工學會誌 Vol.12 No.3

        The quaternary Ti-Al-V-N films have been grown on glass substrates by reactive dc and rf magnetron sputter deposition from a Ti-6Al-4V target in mixed Ar-N₂discharges. The Ti-Al-V-N films were investigated by means of X-ray diffraction(XRD), electron probe microanalysis(EPMA) and scratch tester. Both XRD and EPMA results indicated that the Ti-Al-V-N films were of single B1 NaCl phase having columnar structure with the (111) preferred orientation. Scratch tester results showed that the adhesion strength of Ti-Al-V-N films which treated with substrate heating and vacuum annealing was superior to that of as-deposited film. The good adhesion strength was also achieved in the double-layer structure of Ti-Al-V-N/Ti-Al-V/Glass

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