탄산칼슘의 비등온 열적거동

손용운,임재원,최국선,Sohn, Yong-Un,Lim, Jae-Won,Choi, Good-Sun 한국분말야금학회 2009 한국분말재료학회지 (KPMI) Vol.16 No.3

This study has been carried out to investigate the non-isothermal behaviors and kinetic parameter of calcium carbonate by different thermal analysis methods. At the heating rate of $10^{\circ}C$/min, the onset calcination temperature, the peak and final temperatures of calcium carbonate were $612^{\circ}C$, $748^{\circ}C$, and $890^{\circ}C$ respectively. As the heating rate of the calcium carbonate increased from $5^{\circ}C$/min to $20^{\circ}C$/min, the peak temperature increased from $719^{\circ}C$ to $782^{\circ}C$. The activation energies of the calcium carbonate calculated by the methods of Kissinger and Freeman-Carroll were 40.15 kcal/mol and 43.47 kcal/mol, respectively.

DC Reactive Magnetron Sputtering법에 의한 Ti-Al-V-N 박막의 성장거동

손용운,정인화,이영기,Sohn, Yong-Un,Chung, In-Wha,Lee, Young-Ki 한국재료학회 1999 한국재료학회지 Vol.9 No.7

Ti-6Al-4V 합금을 타겟트로 사용하여 유리 기판위에 dc reactive magnetron sputtering법으로 $N_2$/(Ar+N_2)$ 비, 기전력 및 시간등의 여러 가지 증착 조건에서 Ti-6Al-4V-N 필름을 증착하였고, 각각의 증착 조건에 따른 결정구조 및 우선방위 거동은 X-선 회절장치를 사용하여 조사하였다. Ti-6Al-4V-N 필름은 본질적으로 fcc 결정구조의 $\delta$-TiN에 Al과 V이 결함으로서 고용된 변형된 형태의 $\delta$-TiN구조이고, TiN의 격자상수(4.240 )보다 작은 값을 나타내었는데, 이는 Ti(1.47 )에 비하여 상대적으로 원자반경이 작은 Al(1.43 )과 V (1.32 )이 Ti의 격자위치에 치환된 결과이다. 그리고 Ti-6Al-4V-N 필름은 $_N2$가스 분압이 감소됨에 따라 (111) 우선방위 성장거동을 하였을 뿐만아니라 증착시간의 증가에 따라 뚜렷한 (111) 우선방위 성장거동을 나타내었다. 그리고 증착속도 및 결정입도의 거동 또한 여러 가지 증착 조건에 크게 의존한다 Ti-6Al-4V-N films have been grown onto glass substrates by dc reactive magnetron sputtering from a Ti-6Al-4V-N alloy target at different nitrogen partial pressure, input powers and sputtering times. The influence of various sputtering conditions on structural properties of Ti-6Al-4V-N films was investigated by measuring their X-ray diffraction. The quaternary Ti-6Al-4V-N film is crystallizing in a face centered cubic TiN structure, the lattice parameter is smaller than the TiN parameter as titanium atoms of the TiN lattice are replaced by aluminum and vanadium atoms. The films show the (111) preferred orientation and the (111) peak intensity decreases as the nitrogen partial pressure is increased, but the intensity increases as the sputtering time is increased. The deposition rate and the grain size are alto related with the variation of various sputtering conditions.

폐 반도체 슬러리 및 폐 망간전지 흑연봉으로부터 탄화규소 합성

손용운,정인화,손정수,김병규,Sohn Yong-Un,Chung In-Wha,Sohn Jeong-Soo,Kim Byoung-Gyu 한국자원리싸이클링학회 2003 資源 리싸이클링 Vol.12 No.3

본 연구의 목적은 실리콘웨이퍼의 절단공정에서 발생한 폐슬러리와 폐망간전지에서 발생하는 흑연봉을 각각 규소 및 탄소의 출발물질로 사용하여 가스터빈 부품, 열교환기 등에 사용되는 탄화규소(SiC)를 합성하는 연구를 수행하였다. 실리콘웨이퍼의 절단공정에서 발생하는 폐슬러리로부터 비중차이에 의한 선별과 자력선별 등에 의해 정제된 규소와 탄화규소를 얻을 수 있었으며, 폐망간전지를 해체하여 얻은 탄소봉으로부터 수세와 분쇄를 통하여 탄소분말을 얻을 수 있었다. 탄화규소의 합성은 규소와 당량비의 탄소분발을 혼합하여 1$600^{\circ}C$이상의 온도에서 아르곤 분위기와 진공분위기 하에서 2시간 유지시켰을 때 이루어졌으며, 이때 합성된 탄화규소의 순도는 99% 이상이었다. The synthesis of SiC used for the parts of the gas turbine and the heat exchanger, was carried out. In this study, wire cutting slurry of silicon wafer and the graphite rod of spent zinc-carbon battery were applied to the starting materials for the synthesis. The powders of Si or Si+SiC were obtained from the waste material by filtration, gravity separation and magnetic separation. Graphite powder was produced by dismantling, grinding and gravity separation from spent zinc-carbon battery. The synthesis of SiC could be completed from the mixture powders of Si and C or Si+SiC and C at the condition of equivalent ratio of Si and C, atmosphere of Ar or vacuum, temperature of above 1$600^{\circ}C$ and 2 hours reactions. The purity of synthesized Si-C was above 99%.

직접질화법에 의한 (Ti , Al)N계 복합질화물의 합성 (1)

손용운,이영기,황연,조영수,김석윤 ( Yong Un Sohn,Young Ki Lee,Yeon Hwang,Young Soo Cho,Suk Yoon Kim ) 한국열처리공학회 1995 熱處理工學會誌 Vol.8 No.3

TiN and AlN are ceramic materials with mechanical and chemical properties for use in structural applications at elevated temperature. The purpose of this research is to develop the technology for the synthesis of (Ti. Al)N power, which shows simultancously the excellent properties of TiN and AlN, from the mixed powder(Ti_(0.25) Al_(0.75), Ti_(0.5) Al_(0.5) and Ti_(0.75) Al_(0.25)) by the direct nitriding method. The effects of variables such as temperature, mixing ratio of Al to Ti in raw material were investigated. The(Ti, Al)N powder can be easily synthesized from the mixed powder by the direct nitriding method. Among the mixed powdres, the rutriding behavior decreased with increasing the ratio of Al to Ti. This behavior is well explained by the nitriding mechanism presented in this research.

합철고령토로부터 Al 추출에 관한 연구

손용운,김대수,한규진,임석중 대한금속재료학회 1981 대한금속재료학회 학술대회 개요집 Vol.1981 No.1

반응성 마그네트론 스퍼터링법으로 제조한 Ti-Al-V-N 박막의 미세조직 및 부착특성에 관한 연구

손용운,이영기 한국열처리공학회 1999 熱處理工學會誌 Vol.12 No.3

The quaternary Ti-Al-V-N films have been grown on glass substrates by reactive dc and rf magnetron sputter deposition from a Ti-6Al-4V target in mixed Ar-N₂discharges. The Ti-Al-V-N films were investigated by means of X-ray diffraction(XRD), electron probe microanalysis(EPMA) and scratch tester. Both XRD and EPMA results indicated that the Ti-Al-V-N films were of single B1 NaCl phase having columnar structure with the (111) preferred orientation. Scratch tester results showed that the adhesion strength of Ti-Al-V-N films which treated with substrate heating and vacuum annealing was superior to that of as-deposited film. The good adhesion strength was also achieved in the double-layer structure of Ti-Al-V-N/Ti-Al-V/Glass

규석광으로부터 직접 질화법에 의한 질화규소의 합성

손용운,주성민,정헌생,Sohn Yong-Un,Joo Sung-Min,Chung Hun-Saeng 한국재료학회 2004 한국재료학회지 Vol.14 No.5

$Si_3$$N_4$ ceramics have been identified as one of the promising structural ceramics. This study has been carried out to investigate of the synthetic behaviors of $Si_3$$N_4$ derived from domestic silica-stone by direct nitriding method. The silicon nitridation reaction has been studied in the temperature range of $1300~1550^{\circ}C$. Below the $1400^{\circ}C$, the nitriding rate was measured to be 16%. For the temperatures higher than the $1400^{\circ}C$, $\beta$-$Si_3$$N_4$ phase was formed mainly, and the nitriding rate showed above 98%. With the increasing of sample weight of silicon powder, the nitriding rate and $\beta$-$Si_3$$N_4$ phase increased at $1400^{\circ}C$ for 2 hours. The shape and particle size of$ Si_3$$N_4$ powder synthesized at $1400^{\circ}C$ for 2 hours showed the irregular angular-type and 10 $\mu\textrm{m}$, respectively.

직류 및 고주파 마그네트론 스퍼터링법으로 증착한 Ti - Al - V - N 박막의 특성

손용운(Yong Un Sohn),정인화(In Wha Chung),이영기(Young Ki Lee) 한국열처리공학회 2000 熱處理工學會誌 Vol.13 No.6

The Ti-Al-V-N films have been deposited on various substrates by d.c and r.f reactive magnetron sputtering from a Ti-6Al-4V alloy target in mixed Ar-N₂discharges. The films were investigated by means of XRD, AES, SEM/EDX, microhardness, TG and scratch test. The XRD and SEM results indicated that the films were of single B1 NaCl phase having dense columnar structure with the (111) preferred orientation. The composition of Ti-Al-V-N film was the Ti-7.1Al-4.3V-N(wt%) films. Adhesion and microhardness of Ti-Al-V-N films deposited by r.f magnetron sputtering method were better than those deposited by d.c magnetron sputtering method. The anti-oxidation properties of Ti-Al-V-N films were also superior to that of Ti-N film deposited by the same deposition conditions.

영동鑛山産 浮選金銀鑛의 靑化製鍊에 關한 硏究

손용운,崔舜惇 嶺南大學校 工業技術硏究所 1977 연구보고 Vol.5 No.1

The effects of cyanide concentration and protective alkali were investigated, in cyanide process of sulfide gold ore, flotated in Yeung Dong Mine. The important results of this study are as follows; (1) Mineral sizes of below 80 mesh were extracted to about the same extent in the recovery of gold by cyanidation. (2) A gold of above 90% in recovery was obtained when cyanidation was carried out for 24 hours with 0.5% NaCN solution containing 0.05% CaO to which was added 1kg per ton of ore, after pre-aeration for 2 hours.

금속티타늄으로부터 질화티타늄 합성연구

원창환,손용운,안성권 대한금속재료학회(대한금속학회) 1993 대한금속·재료학회지 Vol.31 No.11

Due to the great hardness, hard nitrides have been extensively used in cutting tools and wear-resistant parts. The nitride also shows excellent high-temperature strength and good corrosion resistance. The purpose of this research is to develop the technology for the synthesis of titanium nitride by the reaction of titanium metal and nitrogen. The titanium nitride(TiN_x) can be manufactured by the several methods. In the present work, bulk TiN_x has been synthesized by the reaction of titanium and nitrogen followed by homogenizing annealing. The homogeneous TiN_(x≥1.0) can be obtained at 1000℃ with the lattice parameter and specific gravity of 0.424㎚ and 5.39g/㎤, respectively similar to that of pure grade TiN.