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SnOx/Pt 薄膜 가스感知素子의 製造 및 그 感知特性
이성필,정완영,이덕동,손병기,Lee, Sung-Pil,Chung, Wan-Young,Lee, Duk-Dong,Sohn, Byung-Ki 대한전자공학회 1988 전자공학회논문지 Vol. No.
$SnO_X$/Pt 薄膜형 가스感知素子의 製造하고 그 특성을 결정하였다. $SnO_X$/Pt 薄膜은 $SnO_2$에 Pt를 重量比로 2% 섞은 표적을 電子량 加熱승치法으로 形成하였다. 素子의 전도도는 온도의존성을 보였고, CO 가스에 대한 感度는 2000 ppm 이하의 낮은 농도범위에서 가스농도는 평방근에 비례하였다. 최적동작온도는 약 300$^{\circ}$C 였고 CO 가스농도가 5000 ppm에서의 응답시간은 약 20초 였다. $SnO_X$/Pt thin film gas sensors were fabricated and their performance characteristics were measured. The $SnO_X$/Pt films were deposited by vacuum evaporating the $SnO_2$ target mixed with 2 wt% Pt. The conductivity showed the temperature dependence and the sensitivity to CO gas was proportional to the square root of gas concentration below 2000 ppm. The optimum operating temperature of the fabricated devices was about 300$^{\circ}$C and the response time in 5000 ppm CO gas was about 20 sec.
정욱진,권영규,배영호,김광일,강봉구,손병기 ( W. J . Chung,Y . K . Kwon,Y . H . Bae,K . I . KIm,B . K . Kang,B . K . Sohn ) 한국센서학회 1996 센서학회지 Vol.5 No.1
Silicon epitaxial films of submicron level were successfully grown by the RTCVD method. For the growth of silicon epitaxial layers, SiH₂Cl₂/ H₂ gas mixtures and various process parameters including Hz prebake process were used. The growth conditions were varied to investigate their effects on the interface abruptness of doping profile, the film growth rates and crystalline properties. The crystallinity of the undoped silicon was excellent at the growth temperature of 900℃. The doping profiles were measured by SIMS technique. The abruptness of doping profile would be controlled within about 200A /decade in the structure of undoped Si / n^+ -Si substrate.
RTCVD 법으로 성장한 Si1-xGex 에피막의 특성
정욱진,군영규,배영호,김광일,강봉구,손병기 ( W . J . Chung,Y . K . Kwon,Y . H . Bae,K . I . Kim,B . K . Kang,B . k. Sohn ) 한국센서학회 1996 센서학회지 Vol.5 No.2
The growth and characterization of heteroepitaxial Si_(l-x)Ge_x films grown by the RTCVD (Rapid Thermal Chemical Vapor Deposition) method were described. For the growth of Si_(l-x)Ge_x heteroepitaxial layers, SiH₄/ GeH₄ / H₂ gas mixtures were used. The growth conditions were varied to investigate their effects on the Si / Ge composition ratios, the interface abruptness and crystalline properties. The experimental data shows that the misfit threading dislocation in Si_(l-x)Ge_x / Si heteroepitaxial film of about 400 A thickness was not observed at the growth temperature of as low as 650℃, and the composition ratios of Si / Ge changed linearly with SiH₄ / GeH₄ gas mixing ratios in our experimental ranges. In the in-situ boron doping experiments, the doping abruptness would be controlled within several hundreds Å/decade.