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손경춘,조금배,최창주,송찬일 조선대학교 전자정보통신연구소 1999 電子情報通信硏究所論文誌 Vol.2 No.1
On account of unusual change in the weather the frequency of the falling of a thunderbolt has been increased recently. Because of the thunderbolt, much damages of life and property are generated Therefore the protection method against the troubles and disaster by the falling of a thunderbolt have been researched world wide. To protect of electrical equipment against the risk of thunderbolt becomes an important duty for electrical engineers. The improve method of the confidence for communication by ground is proposed in this paper.
이우선,손경춘 조선대학교 에너지.자원신기술연구소 2000 에너지·자원신기술연구소 논문지 Vol.22 No.1
Magnetic Characteristics of InSb hall device of multilayerd structures were investigated. For the measurement of electrical properties of hall device, evaporated InSb thin film fabricated with series and parallel multilayers. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. We found that the XRD analysis of InSb thin film showed good properties at 200℃, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of magnetic characteristics were discussed.
이우선,손경춘,김남오 조선대학교 에너지.자원신기술연구소 1999 에너지·자원신기술연구소 논문지 Vol.21 No.1
STO thin films on Si substrate were deposited by on RF magnetron reactive sputter with various substrate temperature and film thickness. SEM analyses showed that STO films had a uniform and fine grain structure. The capacitance of the films properties were the highest value(1000pF) and dependent on substrate temperature. Dielectric constant of the films properties were the highest value(ε_(r) = 300) and dependent on film thickness.
티탄소 스트롬튬 상유전성 박막의 전기전도도 특성에 관한 연구
이우선,손경춘,김남오 조선대학교 에너지.자원신기술연구소 1999 에너지·자원신기술연구소 논문지 Vol.21 No.2
Temperature and frequency dispersion of dielectric permittivity was investigated on thin films of SrTiO_(3) deposited by on RF magnetron reactive sputtering. The thin films deposited on Ag/Si substrates. The SrTiO_(3) films was confirmed by XRD and it is exhibited by SEM that a uniform and fine grain structure. The electrical conduction of the films properties were dependent on temperature or frequency. Resistivity decrease with temperature and electric fild. Dielectric constant of the films properties were the highest value(ε_(r) = 300) and dependent on frequency.