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Electronic and Optical Properties of ZnOS/ZnO Quantum-well Structures with Polarization Effects
전희창,선일쿠마르,이승주,T. W. Kang,S. H. Park 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.69 No.3
The optical properties of ZnOS/ZnO quantum-well (QW) structures, considering piezoelectric and spontaneous polarizations, are investigated by using many-body effects. The ZnOS/ZnO QW structure is found to have small optical gain because SP polarizations have a negative sign in the well and increase with the inclusion of S. These results demonstrate that ZnOS/ZnO QW structure have a strong internal field. This structure offers further flexibility for band-gap engineering and potentially facilitates p-type doping of ZnO-based light-emitting diodes.
전희창,이승주,선일쿠마르,강태원,이남현,김태환 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.8
GaN epilayers on AlN buffer layers with various thicknesses were grown on sapphire substratesby using plasma-assisted molecular-beam epitaxy. The GaN epilayer with an AlN buffer layerwas much smaller than the GaN epilayer without an AlN buffer layer. The crystal quality ofthe GaN active layer was improved by utilizing an AlN layer, which acted as a nucleation layer. The reduced defect density promoted GaN coalition. The double-crystal rocking curves and thephotoluminescence spectra showed that the GaN epilayer grown on a 4-nm AlN buffer layer hadthe best quality among the several kinds of samples. The photoluminescence intensity of the GaNepilayer which is related to the density of the crystal defects was lower when an AlN buffer layerwas used the thin AlN nucleation layer protected against stain propagation. These results indicatethat GaN epilayers grown on AIN buffer layers hold promise for applications in short-wavelengthoptoelectronic devices.