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N-methylpyrrolidine Alane 전구체를 사용한 Al 필름 합성 및 특성 분석
서문규,Seo, Moon-Kyu 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.7
Al thin films were synthesized on TiN/Si substrate by MOCVD using N-methylpyrrolidine alane (MPA) precursor. Effects of substrate temperature, reaction pressure on the deposition rate, surface roughness and electrical resistivity were investigated. The early stage of Al thin film formation was analyzed by in-situ surface reflectivity measurement with a laser and photometer apparatus. From the Arrhenius plot of deposition rate vs. substrate temperature, it was found that the activation energy of surface reaction was 91.1kJ/mole, and the transition temperature from surface-reaction-limited region to mass-transfer-limited region was about $150^{\circ}C$. The growth rate increased with the reaction pressure, and average growth rates of $200{\sim}1,200nm/min$ were observed at various experimental conditions. Surface roughness of the film increased with the film thickness. The electrical resistivity of Al film was about $4{\mu}{\Omega}{\cdot}cm$ in the case of optimum condition, and it was close to the value of the bulk Al, $2.7{\mu}{\Omega}{\cdot}cm$.
서문규 청주대학교 산업과학연구소 2024 産業科學硏究 Vol.41 No.2
Fischer-Tropsch(FT) reaction was performed with Ferrihydrite (Fe:Al:Cu:K, FeOOH·nH2O) catalyst. Effect of gas feed ratio of H2/CO on the composition of FT product was investigated with on-line GC and GC-MS analysis. As the feed ratio of H2/CO increased, the amount of the low molecular weight hydrocarbon compounds below C10 series increased while the amount of hydrocarbon compounds above C11 series decreased.
다이아몬드 CVD에서 산소혼입이 증착속도 및 결정성에 미치는 영향
서문규,이지화 한국세라믹학회 1990 한국세라믹학회지 Vol.27 No.3
Deposition of diamond films on Si(100) from the mixtures of methane and hydrogen were investigated using hot W filament CVD method. The nucleation density could be increased thousandfold by surface treatment with SiC powder. Upon oxygen addition to the mixture, crystal facets became developed more clearly by selectively removing non-diamond carbons, but the film growth rate generally decreased. However, at a very high methane content(e.g. 10%), a small amount of oxygen addition has resulted in an increase in the film deposition rate presumably by promotion of methane decomposition. When the gas pressure was varied, the growth rate exhibited a maxiumum at around 20torr and the film crystallinity steadily improved with the pressure increase. The observed variation of the growth rate by oxygen addition was discussed in terms of its role in the pyrolysis and the subsequent gas phase reactions.
서문규 한국공업화학회 2013 Journal of Industrial and Engineering Chemistry Vol.19 No.6
Fischer–Tropsch (FT) synthesis reaction was performed using ferrihydrite catalyst. During 100 h of FT synthesis reaction, composition changes of the reaction product were studied according to the reaction time using an on-line GC, and the final FT products collected in traps were analyzed by GC–MS. Also, an effect of gas feed ratio of H2/CO on the selectivity of the synthetic products was studied. As a H2/CO feed ratio increased, not only CO conversion and activity of catalyst improved two times, but also CO2conversion was reduced by approximately 40% thereby improving the efficiency of catalyst significantly.
페리하이드라이트 촉매 합성에서 공침 혼합 속도가 피셔-트롭스 촉매 효율에 미치는 영향
서문규 청주대학교 산업과학연구소 2023 産業科學硏究 Vol.40 No.2
Ferrihydrite (FHYD, Fe:Al:Cu:K, FeOOH·nH2O) catalysts were synthesized by a co-precipitation method and an impregnation method. Effect of co-precipitation mixing speed in the FHYD catalyst synthesis on the catalyst efficiency of Fischer-Tropsch(FT) reactions was investigated with on-line GC analysis. As the co-precipitation mixing time increased from zero to 4 hours, the activity of the FHYD catalyst increased from 1.70 to 3.52 g-CO/g-cat·h and the catalyst efficiency was enhanced.
W Filament CVD에 의한 Diamond의 합성
서문규,강동균,이지화 한국세라믹학회 1989 한국세라믹학회지 Vol.26 No.4
Polycrystalline diamond films have been deposited on Si wafer Ly hot W filament CVD method using CH4H2 mixtures. The effects of surface pretreatment, W filament temperature, CH4 volume fraction, and addition of water vapor on the growth rate and morphology of the films were investigated. Surface pretretment was essential for depositing a continuous diamond film. Raising the filament temperature resulted in an increased growth rate and a better crystal quality of the film. As the methane content is varied from 0.5% to 5%, well-faceted crystals gradually transformed into spherical particles of non-diamond phase with a simultaneous increase in the growth rate. Addition of water vapor markedly improved the crystallinity to produce crystalline particles even with 5% methane mixture.
열필라멘트법에 의한 다이아몬드 CVD반응의 기상 조성 분석
서문규 한국세라믹학회 1998 한국세라믹학회지 Vol.35 No.11
Gas phase compositions of the hot filament-assisted diamond CVD reaction were analyzed by on-line quadrupole mass analysis(QMA) technique. D2 isotope experiments showed that methance molecules were decomposed into atomic state and then recombined in to acetylene during transport the probe line. Although acetylene or ethylene was supplied instead of methane similar gas compositions were obtained when filament temperature was above 1500$^{\circ}C$ Therefore this system could be assumed near thermal equilibrium state. Filament temperature and reaction pressure variation experiments exhibited the same tendency between acetylene concentration and diamond growth rate and these results implied that acetylene molecule played the role of the reactive species in the diamond CVD reaction.
ESCA Depth Profiling에 의한 고무-황동 계면 분석
서문규 청주대학교 산업과학연구소 1998 産業科學硏究 Vol.16 No.-
Rubber-brass interface which was built up during vulcanization process was analyzed by ESCA depth profiling technic. The inteface was separated easily and clearly after vulcanrization when filter paper was inserted between rubber and brass sheet. Quantitative analysis of ESCA depth profile data was performed, and chemical bending states and relative compositions of compounds in the interfacial layer were presented. The interfacial layer was formed in thickness about 1000 A˚. The outer 500A˚ was consisted of Cu_(x)S mainly, and the inner region was consisted of ZnS, ZnO and metallic-Cu mixed together.