http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Carrier Lifetimes in Thin-film Photovoltaics
백도현 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.67 No.6
The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.
Properties of Silicon for Photoluminescence
백도현 한국진공학회 2014 Applied Science and Convergence Technology Vol.23 No.3
For more than five decades, silicon has dominated the semiconductor industry that supports memory devices, ICs, photovoltaic devices, etc. Photoluminescence (PL) is an attractive silicon characterization technique because it is contactless and provides information on bulk impurities, defects, surface states, optical properties, and doping concentration. It can provide high resolution spectra, generally with the sample at low temperature and room-temperature spectra. The photoluminescence properties of silicon at low temperature are reviewed and discussed in this study. In this paper, silicon bulk PL spectra are shown in multiple peak positions at low temperature. They correspond with various impurities such as In, Al, and Be, phonon interactions, for example, acoustical phonons and optical phonons, different exciton binding energies for boron and phosphorus, dislocation related PL emission peak lines, and oxygen related thermal donor PL emissions.
전반사 방법을 이용한 표면 근처 액정의 동적 특성에 대한 연구
백도현,임동건 한국물리학회 2007 새물리 Vol.54 No.1
The dynamics of the director orientation of liquid crystals near the surface of a cell is studied. An experimental system based on total internal reflection is developed to measurement of the orientation dynamics. The dynamics of the director orientation near the surface is found to be about 10 to 100 times faster than that of the director at the bulk. Through a computer simulation of the angular distribution of the directors, we found that the large magnitude of the second spatial derivative of the orientation angle of the liquid crystal, compared those at the bulk, is the dominant cause for this phenomenon. 배향 표면근처 액정의 동적 특성을 실험하기 위하여 전반사 실험 장치를 구성하였고, 측정 결과 표면 근처에서의 액정 방향자의 각 완화 시간은 셀 내부에서의 액정 방향자 완화 시간보다 수십 배 빠름을 알 수 있었다. 이 현상의 원인을 분석하기 위하여 액정의 운동 방정식을 이용한 방향자 분포 함수의 시간 변화를 계산하는 프로그램을 제작하였고, 이로서 배향 표면 근처 액정의 빠른 움직임이 액정 방향자의 위치에 따른 2차 미분 항이 표면에서가 셀 내부에서보다 훨씬 크기 때문인 것을 발견하였다.