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HfO<sub>2</sub>/Hf/Si MOS 구조에서 나타나는 HfO<sub>2</sub> 박막의 물성 및 전기적 특성
배군호,도승우,이재성,이용현,Bae, Kun-Ho,Do, Seung-Woo,Lee, Jae-Sung,Lee, Yong-Hyun 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.2
In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.
HfO₂ MIM capacitor의 하부 금속에 따른 전기적 특성 변화
도승우(Seung-Woo Do),배군호(Kun-Ho Bae),이재성(Jae-Sung Lee),이용현(Yong-Hyun Lee) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.7
In this study, on the various metal electrodes a high-k dielectrics, HfO₂, thin film was deposited by reactive RF-magnetron sputtering method for the application of Metal-Insulator-Metal (MIM) capacitors. The metals, such as RuO₂, Pt, W, TiN and poly-Si were used as a bottom electrodes and AI as a top electrode. The characteristics of capacitance and leakage current depend on the interface properties between HfO₂ and the bottom electrode. Among the metals, Pt and W were g∞d candidates for a bottom electrode in the metal-HfO₂-metal structure.