정신질환자의 불법행위에 대한 감독자책임 -책임주체에 관한 논의를 중심으로-

방재호 원광대학교 법학연구소 2018 의생명과학과 법 Vol.20 No.-

민법 제755조 제1항은 “무능력자에게 책임이 없는 경우에는 이를 감독할 법정의무 있는 자가 그 무능력자의 제3자에게 가한 손해를 배상할 책임이 있다.”라고 규정하고 있을 뿐 법정감독의무자에 대하여 명확한 규정을 두지 않았다. 이에 아래와 같은 검토가 필요하다. 첫째, 성년후견개시의 심판을 받은 정신질환자가 가해행위 당시 책임을 변식할 지능이 없는 경우, 법정감독의무자를 누구로 볼 것인지가 문제된다. 일부 학자들은 민법 제947조의 신상보호의 범위에 정신질환자를 감호해야 할 의무까지 포함된다고 주장하나 이러한 해석은 성년후견인에게 과중한 부담을 주게 되어 민법 제755조 제1항의 면책을 위해 정신질환자를 감금, 억압할 수 있음을 간과한 것이다. 또한 민법 제947조의 복리배려의무 및 의사존중의무 및 UN 장애인권리협약 제12조에도 반할 수 있다. 따라서 성년후견인은 사실상의 감호행위까지 포함하는 넓은 의미의 신상보호의무를 진다고 볼 수 없으므로 제755조 제1항의 법정감독의무자도 될 수 없다. 둘째, 정신건강증진 및 정신질환자 복지서비스지원에 관한 법률 제39조(이하 정신건강복지법으로 통일한다)의 보호의무자가 민법 제755조 제1항의 법정감독의무자가 될 수 있는지 검토가 필요하다. 정신건강복지법 제39조는 후견인 또는 부양의무자가 정신질환자의 보호의무자가 된다고 규정하며, 동법 제40조 제3항은 보호의무자의 의무에 대해 구체적으로 규정하고 있는데, 제40조 제3항의 의무는 ‘자상타해방지감독의무’로 해석하는 것이 타당하다. 따라서 행위 당시 책임을 변식할 지능이 없는 정신질환자가 성년후견개시의 심판을 받았다면 성년후견인이 민법 제755조 제1항의 법정감독의무자가 되며, 성년후견개시의 심판을 받지 않았다면 부양의무자가 민법 제755조 제1항의 법정감독의무자가 될 것이다. 한편 정신건강복지법의 입법취지를 고려할 때 보호자제도는 그대로 유지하되 동법 제40조 제3항의 ‘자상타해방지감독의무’는 삭제됨이 타당하다. 셋째, 성년후견개시의 심판을 받지 않았거나, 정신건강복지법의 적용을 받지 않는 정신질환자의 경우, 민법 제755조의 감독의무자를 누구로 볼 것인지 문제된다. 성년후견제도 도입 전 대법원은 금치산선고를 받지 않은 심신상실자의 경우, 처・부모의 순위로 감독의무자가 된다고 판시한 바가 있으나, 처・부모・성인인 자녀에게 감독의무를 부과할 법적 근거가 없으며 이들은 민법 제755조에 의한 사실상의 감독자에도 해당하지 않는다. 정신건강복지법 제40조 제3항의 ‘자상타해방지감독의무’의 삭제를 전제로 상기 논의를 종합해 보면, 심신상실상태 있는 정신질환자가 가해행위로 인해 타인에게 손해를 발생케 한 경우, 피해자는 손해에 대한 배상을 청구할 수 있는 주체가 없다는 문제점이 발생한다. 따라서 심신상실 상태에 있는 정신질환자의 불법행위의 경우, 민법 제755조 감독자책임에 관한 새로운 제도설계가 필요하다. 생각건대 프랑스, 미국의 입법례를 차용하여 심신상실상태에 있는 정신질환자가 가해행위로 인해 타인에게 손해를 발생케 한 경우, 책임능력의 여부와 무관하게 민법 제750조에 의한 일반불법행위책임을 지도록 개정됨이 타당하다. Article 755, Clause 1 stipulates, “In the case that no responsibility lies with the incapable person, those with the legal obligation to supervise the incapable person bears the responsibility to pay damages for any losses incurred by a third party due to the acts of the incapable person.” However, the clause does not give clear stipulations concerning the legal supervisor. As such, the following review is needed. First, if there is no possibility of the person with mental illness who had been ordered by court to have a legal adult guardian to have had the logical judgment abilities at the time of the act, the issue of who is the person with the legal supervisory obligations rises. Some scholars argue that the protection of patients of mental illness needs to be included into the scope of physical protection under Article 947 of the Civil Code but this interpretation places excessive burden on the adult legal guardian and has not taken sufficient account the fact that to become immune from Article 755, Clause 1 of the Civil Code, the legal guardian may imprison or oppress the person with mental ilness. They can also go against the obligations to considering welfare and obligations to respect opinions under Article 947 of the Civil Code and Article 12 of the UN Convention on the Rights of the Physically Challenged. As such, since it cannot be seen that the adult legal guardian bears the obligation of broad physical protection that includes practical protection, he cannot become the person with the obligation for legal supervision under Article 755, Clause 1. Second, there is a need to review whether the person with the legal obligation under Article 39 of the law on the promotion of mental health and support for mental health welfare services (heretofore referred to as the Act on Mental Health and Welfare) can become the person with the legal obligation of supervision under Article 755, Clause 1 of the Civil Code. Article 39 of the Act on Mental Health and Welfare states that the legal guardian or the person with the obligation of care-taking becomes the person with the legal obligation to protect the patient with mental illness. Article 40, Clause 3 of the same law specifically defines the obligation of the person with the obligation of protection. The obligation under Article 40, Clause 3 should be interpreted as the ‘obligation to supervise in order to prevent injury or harm to self or others’. As such, if a patient of mental illness who does not have the logical judging ability to determine the consequences of his act at the time of the act had been ordered to receive legal adult guardianship, the legal adult guardian becomes the person with the legal obligation of supervision as per Article 755, Clause 1 of the Civil Code. If the patient of mental illness had not been ordered to receive legal guardianship, the person with the obligation of care-taking shall become the person with the obligation of legal supervision. Meanwhile, given the intention of the Act on Mental Health and Welfare, the policy of guardianship should be maintained but the ‘obligation to prevent harm or injury to self or others’ as per Article 40, Clause 3 of the same law should be deleted. Third, in the case of patients with mental illness who had not been ordered to receive legal adult guardianship or who are not subject to the Act on Mental Health and Welfare, there is the issue of who should be seen as the person with the legal obligation of supervision as per Article 755 of the Civil Code. Before adopting the legal adult guardianship, the Supreme Court had ordered that those who are not to full capacity of their body or mind and who have not been ruled as unable to manage their own property shall have first the wife and then the parent as the person with the obligation to supervise them. But there is no legal rationale to grant the obligation of supervision to the wife or parent, nor does this apply to the practical supervisior un...

유전자변형생물체에 관한 나고야 추가의정서의 민사법적 책임의 한계

방재호(Bang, Jae-Ho),문상혁(Moon, Sang Hyuk) 이화여자대학교 생명의료법연구소 2013 생명윤리정책연구 Vol.7 No.1

「Additional Protocol regarding Responsibility and Aid」only prescribes a part of the conditions of civil responsibility and delegates the rest to the domestic law, and thus can be said to be a non-contained structure. Thus, this can be said to be applicable only if supplemented by implementing legislation. Therefore, now it is time for Korea to determine the method of implementing legislation. There are largely three methods to go about the implementation legislation. First is applying the current law, second is legislating a separate special law for genetically modified organisms, and third is applying the combination of special laws prepared separately from the current law. Accordingly, when there is a loss due to a genetically modified organism, the legal concept for responsibility according to the current law can be summarized into product responsibility, environmental policy basic law, contract responsibility, and illegal activity responsibility. First, in case of product responsibility, non-fault responsibility element is introduced for the defect in manufacturing, but fault responsibility element is introduced for design defects or indication defects with the structure where the issue of development risk is evaluated at the stage of defect. Therefore, the product responsibility law is quite inadequate as the legal system to represent the position of the importing country. Also, even if genetically modified organisms are included in the scope of products, it is almost impossible to prove the causal relationship between the design/manufacturing defects for the genetically modified organisms which are products of high-degree science technology and the damage. Second, in case of environment policy law, there is the problem that it cannot be applied to environment pollution damage that occurs outside ‘business site and such.’ Also, for genetically modified organisms, in most case the genetically modified foods are delivered to the final consumer through many stages of distribution networks. The environment policy law, however, cannot be applied to accidents that occurs while moving from the business site to another. Third, in case of contract responsibility, it is possible to constitute a legal theory of contract responsibility when there is a damage between the corresponding parties. The damage regarding genetically modified organisms, however, is generally the damage to crops of nearby farmers by the farmer growing the genetically modified seeds, or the damage incurred to the consumer after a complex distribution process. Therefore, in this case it is difficult to constitute a legal theory by the contract responsibility. Fourth, in case of illegal activity responsibility, most information regarding the genetically modified organisms is accumulated by large corporations, and the information is not provided to the victims. Accordingly, the victims in most cases lack the technical knowledge on the technical area of the science technology, and it is practically impossible for the victim to prove the damage from which the dispute arises. In such cases, the consumer rights may be protected by the legal analysis relieving the burden of proof for such conditions, or by probability theory/preemptive presumption theory, but it poses the concern that it may hinder the legal safety in that the criteria of legal analysis is unclear. Therefore, the application of the current law in the method of implementing legislation of additional protocol is limited. Therefore, in future, there should be studies on the method of legislating a separate special law or applying the combination of special laws prepared separately from the current law in preparation of the implementing regulations according to Article 12 of 「Additional Protocol for Responsibility and Aid.

저합금 내열강 와이어를 이용한 이종재료(SCM440/SS275)의 레이저-아크 하이브리드 용접 특성 고찰

방재호(Jae-Ho Bang),김종희(Jong-Hee Kim),김정식(Jung-Sic Kim),김연두(Yeon-Doo Kim),윤혜슬(Hye-Seul Yoon),방한서(Han-Sur Bang),방희선(Hee-Seon Bang) 대한용접·접합학회 2018 대한용접학회 특별강연 및 학술발표대회 개요집 Vol.2018 No.11

Ellipsometric Study of Strain Effect in Epitaxial CdTe Grown on GaAs(001)

Kim, Kwang Joo,Bahng, Jae Ho 建國大學校基礎科學硏究所 1996 理學論集 Vol.21 No.-

GaAs(001) 기판 위에 hot-wall epitaxy 방법을 이용하여 4.2 및 8.5 ㎛의 두께로 성장되어진 CdTe 박막들에 대하여 분광타원해석법을 이용한 유전함수를 1.6∼4.1 eV 영역에서 측정하여 bulk CdTe(001) 시료에서의 측정 결과와 비교하였다. 측정 결과들에 대한 분석 결과 박막들에 대한 E₁및 E₁+ △₁밴드간 전이에너지가 bulk CdTe에서의 위치인 3.3 및 3.8 eV와 비교하여 고에너지 쪽으로 이동하는 것이 발견되었다. 이와 같은 전이구조의 이동에 대한 정량적인 분석을 위하여 유전함수의 2차 미분값들에 대한 critical-point 해석을 수행하였고 그 결과 두 밴드간 전이구조의 에너지가 4.2-㎛ 박막의 경우 bulk CdTe에서의 값과 비교하여 8 meV만큼 고에너지 쪽으로 이동함을 알아내었다. 이와 같은 밴드간 전이의 critical-point 에너지 이동은 CdTe 박막에 대한 격자변형 텐소의 hydrostatic 성분에 의한 것으로 해석되어지며 shear 성분의 경우는 매우 큰 spin-orbit splitting(△₁)의 값으로 인하여 에너지 이동에 기여함이 무시할 만한 것으로 해석되어진다. Ellipsometrically measured dielectric functions of Cdte films grown on GaAs(001) substrates by hot-wall epitaxy to thicknesses of 4.2 and 8.5 ㎛ have been compared with those of a (001)-oriented bulk CdTe in the 1.6∼4.1 eV region. It is found that for the films the E₁and E₁+ △₁interband structures near 3.3 and 3.8 eV respectively in the dielectric function spectra tend to shift to slightly higher photon energies compared to those of the bulk. A critical-point analysis of the two interband structures has been performed for the second derivatives of the dielectric function spectra. The critical-point energies of the two structures for the 4.2-㎛ film are found to shift to higher energies by 8 meV from those for the bulk. The critical-point energy shifts can be explained in terms of the widening of the energy gap between the conduction and valence bands due to the hydrostatic contribution of the strain tensor in the film with the shear contribution unresolved due to the large spin-orbit splitting △₁.

Reducing the Linewidths and the Sizes of Metallic Patterns to the nm Scale by Ion-Milling

구자용,방재호,홍영규 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.4

We report a simple and reliable method of reducing the linewidths and the sizes of metallic patterns fabricated on a wide area of a silicon wafer. To test the feasibility of this method, we fabricated one-dimensional arrays of Ni and Au wires and two-dimensional arrays of Ni and Au boxes on SiO2/Si wafers by using electron beam lithography. We milled the metallic wires and boxes by using an Ar-ion beam to reduce the linewidths and sizes; afterwards, we etched the substrate chemically to remove the metallic shreds. The final linewidths of the metallic patterns were reduced to 10 nm with a linear milling rate with respect to the milling time.

Spectroscopic Ellipsometry Study on Strained and Relaxed Si₁-xGex Alloys

Kim, Kwang Joo,Bahng, Jae Ho,Park, Jung Hyun,Kwak, Chul Young 建國大學校基礎科學硏究所 1996 理學論集 Vol.21 No.-

Si(001) 기판위에 에피성장된 격자변형 및 격자완화된 Si₁-xGex(0.07≤ x ≤ 0.23) 합금에 대한 유효 유전함수들이 분광타원해석법을 이용하여 상온에서 2∼5.3 eV 에너지 영역에서 측정되었다. 격자완화된 의 경우 3.4 eV 근처에서 나타나는 , E₁ 및 E₁+△₁밴드간 전이에 의한 전이구조는 Ge 성분비가 증가함에 따라 점차 저에너지 쪽으로 이동하고 4.2 eV 근처에 나타나는 E₂밴드간 전이에 의한 전이구조는 거의 변화하지 않는 것이 발견되었다. 격자 변형된 경우 3.4 eV 근처에서 나타나는 전이구조의 저에너지 이동이 격자완화된 경우와 비교하여 적은 것으로 판명되었다. 시료들의 유효유전함수들에 대한 2차 미분 결과들에 대한 line-shape analysis를 수행하여 , E₁ 및 E₁+△₁전이구조들의 에너지 이동을 조사하였다. 조사 결과 전이구조의 저에너지 이동이 E₁및 E₁+△₁ 전이구조의 이동에 비하여 큰 것으로 나타났고 이동비율은 격자변형된 시료들에서 큰 것으로 나타났다. 또한 격자 변형된 합금에서의 전이구조들의 에너지가 격자완화된 합금에서와 비교하여 고에너지 쪽으로 이동하였다. 이와 같은 격자변형된 합금에서의 에너지 이동은 deformation potential 이론에 의한 예측 결과와 일치하였다. Pseudodielectric functions of strained and relaxed Si₁-xGex (0.07≤ x ≤ 0.23) alloys grown epitaxially on Si(001) substrates have been measured ellipsometrically at room temperature in the 2∼5.3 eV photon energy region. For the relaxed alloys, the structure at about 3.4 eV due to the and E₁+ △₁ interband transitions is found to shift gradually to lower energies as the Ge composition increases while the 4.2 eV structure due to the E₂interband transitions remains at about the same energy. On the other hand, for the strained alloys, the rate of the low-energy shift of the 3.4-eV structure for increasing Ge composition is found to be smaller than that for the relaxed alloys. A line-shape analysis on the numerical second derivative spectra of the pseudodielectric functions have been performed and the critical-point energies of the E , E₁, and E₁+△₁transition edges for the strained and relaxed samples are obtained. Results of the line-shape analysis indicate that the rate of decrease of the energy for increasing Ge composition is bigger than those of the E₁and E₁+△₁energies for both the relaxed and strained samples with the difference being bigger for the strained samples. Also, the , E₁ and E₁+△₁transition edges for the strained alloys shift to higher energies compared to those for the relaxed alloys. Such strain-induced shifts in the transition energies agree with the changes in the electronic band structure of alloys predicted by the deformation potential theory.

Photoluminescence Study on Crystalline Silicon Single Quantum Wells

홍영규,구자용,방재호,이재열,윤민중,송남웅,이세경,박태숙 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.5I

Crystalline silicon (c-Si) single quantum wells with the structure of SiO2/c-Si/SiO2 are fabri- cated by high-temperature thermal oxidation of silicon-on-insulator wafers and are studied by using photoluminescence (PL) measurements at room temperature. Four emission peaks are observed around 1.8, 2.3, 2.7, and 3.0 eV. The PL peak near 2.3 eV shows a clear blueshift, the magnitude of which depends on the thickness of the top SiO2 layer as the thickness of the c-Si layer shrinks to zero. The PL peaks observed from this structure are not related with the quantum con.nement eects; rather, they come from the SiO2 layers or the interface region between the c-Si and the SiO2 layers.f

DC 마그네트론 스퍼터링으로 제작한 Ti 박막의 광학적 성질 연구

강지훈,이명희,방재호,김광주 한국진공학회 1997 한국진공학회 학술발표회초록집 Vol.- No.-

Controlled Growth of Multi-walled Carbon Nanotubes Using Arrays of Ni Nanoparticles

지승묵,이태진,방재호,홍영규,김한철,하동한,김창수,구자용,Ji, Seung-Muk,Lee, Tae-Jin,Bahng, Jae-Ho,Hong, Young-Kyu,Kim, Han-Chul,Ha, Dong-Han,Kim, Chang-Soo,Koo, Ja-Yong The Korean Vacuum Society 2008 Applied Science and Convergence Technology Vol.17 No.5

화학기상증착법과 Ni 나노입자 배열을 이용한 탄소나노튜브의 최적 성장 조건을 연구했다. Ni 입자의 크기를 변화시키는 방법으로 탄소나노튜브의 직경을 20 nm 이하까지 제어할 수 있었다. 개별 Ni 입자의 크기와 위치는 기존의 식각법 등을 이용하여 웨이퍼 수준의 대면적에서 연속적으로 제어가 가능하였다. 성장온도, 탄소원, 희석가스 등의 비율을 최적화 함으로써 $SiO_2/Si$ 웨이퍼의 넓은 면적에서 각 Ni 입자로부터 단 한 개씩의 탄소나노튜브가 100% 확률로 성장 가능하다는 것을 보였다. 탄소나노튜브의 위치, 직경, 벽두께 등의 특성들은 성장조건을 조정하여 제어가능하다는 것을 보였다. We have investigated the optimal growth conditions of carbon nanotubes (CNTs) using the chemical vapor deposition and the Ni nanoparticle arrays. The diameter of the CNT is shown to be controlled down to below 20 nm by changing the size of Ni particle. The position and size of Ni particles are controlled continuously by using wafer-scale compatible methods such as lithography, ion-milling, and chemical etching. Using optimal growth conditions of temperature, carbon feedstock, and carrier gases, we have demonstrated that an individual CNT can be grown from each Ni nanoparticle with almost 100% probability over wide area of $SiO_2/Si$ wafer. The position, diameter, and wall thickness of the CNT are shown to be controlled by adjusting the growth conditions.

GaAs(001) 기판위에 에피성장된 CdTe 박막의 격자변형 효과에 대한 분광타원해석적 연구

김광주 ( Kwang Joo Kim ),방재호 ( Jae Ho Bahng ) 건국대학교 기초과학연구소 1996 理學論集 Vol.21 No.-

GaAs(00l) 기판, 위에 hot-wall epitaxy 방법을 이용하여 4.2 및 8.5 μm의 두께로 성장되어진 CdTe 박막들에 대하여 분광타윈해석법을 이용한 유진함수를 1.6 ~ 4.1 eV 영역에서 측정하여 bulk CdTe(00l) 시료에서의 측정 결과와 비교하였다. 측정 결과들에 대한 분석 결과 박막들에 대한 E1 및 E1+△1 밴드간 전이에너지가 bulk CdTe에서의 위치인 3.3 및 3.8 eV와 비교하여 고에너지 쪽으로 이동하는 것이 발견되었다. 이와 같은 전이구조의 이동에 대한 정량적인 분석을 위하여 유전함수의 2차 미분값들에 대한 critical-pointl해석을 수행하였고 그 결과 두 밴드간 전이구조의 에너지기 4.2-μm 박막의 경우 bulk CdTe에서의 값과 비교하여 8 meV만큼 고에너지 쪽으로 이동함을 알아내었다. 이와 같은 밴드간 전이의 critical-point 에너지 이동은 CdTe 박막에 대한 격자변형 텐소의 hydrostatic 성분에 의한 것으로 해석되어지며 shear 성분의 경우는 매우 큰 spin-orbit splitting(△1)의 값으로 인하여 에너지 이동에 기여함이 무시할 만한 것으로 해석되어진다. Ellipsometrically measured dielectric functions of CdTe films grown on GaAs(00l) substrates by hot-wall epitaxy to thicknesses of 4.2 and 8.5 μm have been compared with those of a (00l)-oriented bulk CdTe in the 1.6~4.1 eV region. It is found that for the films the E1 and E1+△l interband structures near 3.3 and 3.8 eV respectively in the dielectric function spectra tend to shift to slightly higher photon energies compared to those of the bulk. A critical-point analysis of the two interband structures has been performed for the second derivatives of the dielectric function spectra. The critical-point energies of the two, structures for the 4.2-μm film are found to shift to higher energies by 8 meV from those for the bulk. The critical-point energy shifts can be explained in terms of the widening of the energy gap between the conduction and valence bands due to the hydrostatic contribution of the strain tensor in the film with the shear contribution unresolved due to the large spin-orbit splitting △1