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시뮬레이션을 통한 TFET 소자에서의 Source-to-Gate Underlap/Overlap 길이에 따른 특성 변화 연구
김현민(Hyun-Min Kim),이준일(Junil Lee),권대웅(Dae Woong Kwon),박의환(Euyhwan Park),김시현(Sihyun Kim),이륭빈(Ryoongbin Lee),박태형(Taehyung Park),이기태(Kitae Lee),박병국(Byung-Gook Park) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.11
Tunneling field effect transistor (TFET) has been investigated as a substitute for a conventional metal-oxide-semiconductor field effect transistor (MOSFET) in the field of low-power operation device. Especially, the vertical TFET has been studied because it has high denity and merit for fabrication. In this paper, the source -to-gate underlap/overlap - dependent characteristic of TFET arising from a gate etch process in vertical TFET is investigated through a technology computer aided design (TCAD) simulation.
시뮬레이션을 통한 Tunneling Field Effect Transistor의 온도와 트랩 분포에 따른 전류 전달 특성 분석
이기태(Kitae Lee),이륭빈(Ryoongbin Lee),권대웅(Dae Woong Kwon),박의환(Euyhwan Park),이준일(Junil Lee),김시현(Sihyun Kim),박태형(Taehyung Park),김현민(Hyun-Min Kim),박병국(Byung-Gook Park) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.11
Tunneling field effect transistor (TFET) has been expected to replace conventional metal-oxide-semiconductor field effect transistor (MOSFET) in the field of low-power operation device. The traps in transistor can influence I-V characteristic of transistor. In this study, we investigate current transfer characteristics of TFET by temperature and trap distribution.
시뮬레이션을 통한 Double Gate Tunneling Field Effect Transistor의 최적화 연구
김현민(Hyun-Min Kim),이준일(Junil Lee),권대웅(Dae Woong Kwon),김장현(Jang Hyun Kim),박의환(Euyhwan Park),김시현(Sihyun Kim),박태형(Taehyung Park),이륭빈(Ryoongbin Lee),박병국(Byung-Gook Park) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.6
Tunneling field effect transistor (TFET) is expected to replace conventional Metal-oxide-semiconductor field effect transistor (MOSFET) in the field of low-power operation device. However, its relatively low on-current has still remained as a problem. This paper suggests the way to optimize TFET using technology computer aided design (TCAD) simulation. The effect of band gap energy and body thickness on the transfer characteristic was investigated.