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소프트 스위칭 Single Stage AC/DC Full Bridge Boost 컨버터
김은수(E. S. Kim),조기연(K. Y. Joe),김윤호(Y. H. Kim),조용현(Y. H. Cho),박경수(G. S. Park),안호균(H. G. An),박순구(S.G.Park) 전력전자학회 1999 전력전자학술대회 논문집 Vol.1999 No.7
A new soft switching single stage AC-DC full bridge boost converter with unit input power factor and isolated output is presented in this paper Due to the use of a non-dissipative snubber on the primary side, a single stage high-power factor isolated full bridge boost converter has a significant reduction of switching losses in the main switching devices, The non-dissipative snubber adopted in this study consists of a snubber capacitor Cr. a snubber inductor Lr, a fast recovery snubber diode Dr, and a commutation diode Dr, This paper presents the complete operating prin챠ples, theoretical analysis and experimental results.
홍현선,박경수,이찬기,김범성,강이승,진연호,Hong, H.S.,Park, K.S.,Lee, C.G.,Kim, B.S.,Kang, L.S.,Jin, Y.H. 한국분말야금학회 2012 한국분말재료학회지 (KPMI) Vol.19 No.6
Nowadays, research and development on quantum dot have been intensively and comprehensively pursued worldwide in proportion to concurrent breakthrough in the field of nanotechnology. At present, quantum dot technology forms the main interdisciplinary basis of energy, biological and photoelectric devices. More specifically, quantum dot semiconductor is quite noteworthy for its sub-micro size and possibility of photonic frequency modulation capability by controlling its size, which has not been possible with conventionally fabricated bulk or thin film devices. This could lead to realization of novel high performance devices. To further understand related background knowledge of semiconductor quantum dot at somewhat extensive level, a review paper is presently drafted to introduce basics of (semiconductor) quantum dot, its properties, applications, and present and future market trend and prospect.
NiO 증착시의 Ar 압력 변화에 따른 Ni - Fe / NiO 이층막의 자기적특성과 미세구조에 대한 연구
노재철(J. C. Ro),이두현(D. H. Lee),김용성(Y. S. Kim),서수정(S. J. Suh),박경수(G. S. Park) 한국자기학회 1998 韓國磁氣學會誌 Vol.8 No.6
The exchange anisotropy between NiO antiferromagnetic layer and NiFe ferromagnetic layer has been investigated in NiFe(10 ㎚)/NiO(60 ㎚) formed by magnetron sputtering. The NiO films were sputtered from nickel oxide using R. F. power and NiFe, Ta were deposited using D. C. power under Ar atmosphere. Above all, we studied the exchange anisotropy of Ni-Fe/NiO bilayer, and focused especially on the effect of NiO deposition condition. Our experimental data showed that the dominant factor for determining the exchange anisotropy properties was the Ar pressure during NiO deposition. The better exchange anisotropy properties were found when the NiO film was deposited at low Ar pressure probably due to the flatten interface and the epitaxial tendency of NiO grains and NiFe grains. However, as Ar pressure increased, interfacial diffusion at NiFe/NiO interface and oxygen content of NiO film increased, and consequently reduced the exchange anisotropy. We concluded that the flatten interface and relatively low oxygen content of NiO layer are dominant factors for the enhancement of the exchange anisotropy in NiFe/NiO bilayer.