http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Mn - Ir의 조성과 두께 및 초기진공도에 따른 Mn - Ir / Ni - Fe / Zr 다층막의 자기적특성과 미세구조 연구
노재철(J. C. Ro),최영석(Y. S. Choi),이경섭(K. S. Lee),김용성(Y. S. Kim),서수정(S. J. Suh) 한국자기학회 1999 韓國磁氣學會誌 Vol.9 No.3
The magnetic properties between Mn-Ir antiferromagnetic layer and Ni-Fe ferromagnetic layer have been investigated in Mn-Ir/Ni-Fe/Zr on Si wafer formed by magnetron sputtering. Mn-Ir was sputtered from Ir chips and Mn target using D.C. power, Ni-Fe and Zr were deposited from Ni-Fe and Zr targets using D. C. power under Ar atmosphere. We studied the dependence of the magnetic properties on Ir content of Mn-Ir layer for Mn-Ir/Ni-Fe bilayer, and obtained the highest Hex of 219 Oe and the low Hc of 30 Oe. And then focused on the effect of base pressure for Mn-Ir containing multilayers. Our experimental data showed that if the base pressure is higher than 3.0×10^(-6) Torr, the exchange anisotropy of Mn-Ir/Ni-Fe/Zr disappeared probably due to the grain refining of Mn-Ir film. In addition we have studied the dependence of Zr buffer on magnetic properties of Mn-Ir/Ni-Fe/Zr multilayers, and observed that Zr buffer bring about (111) texture and lower Hc of Mn-Ir/Ni-Fe/Zr multilayer.
NiO 증착시의 Ar 압력 변화에 따른 Ni - Fe / NiO 이층막의 자기적특성과 미세구조에 대한 연구
노재철(J. C. Ro),이두현(D. H. Lee),김용성(Y. S. Kim),서수정(S. J. Suh),박경수(G. S. Park) 한국자기학회 1998 韓國磁氣學會誌 Vol.8 No.6
The exchange anisotropy between NiO antiferromagnetic layer and NiFe ferromagnetic layer has been investigated in NiFe(10 ㎚)/NiO(60 ㎚) formed by magnetron sputtering. The NiO films were sputtered from nickel oxide using R. F. power and NiFe, Ta were deposited using D. C. power under Ar atmosphere. Above all, we studied the exchange anisotropy of Ni-Fe/NiO bilayer, and focused especially on the effect of NiO deposition condition. Our experimental data showed that the dominant factor for determining the exchange anisotropy properties was the Ar pressure during NiO deposition. The better exchange anisotropy properties were found when the NiO film was deposited at low Ar pressure probably due to the flatten interface and the epitaxial tendency of NiO grains and NiFe grains. However, as Ar pressure increased, interfacial diffusion at NiFe/NiO interface and oxygen content of NiO film increased, and consequently reduced the exchange anisotropy. We concluded that the flatten interface and relatively low oxygen content of NiO layer are dominant factors for the enhancement of the exchange anisotropy in NiFe/NiO bilayer.
Mn - Ir / Ni - Fe 다층막의 하지층과 적층구조에 따른 교환이방성과 미세구조 연구
노재철(J. C. Ro),윤성용(S. Y. Yoon),이경섭(K. S. Lee),김용성(Y. S. Kim),서수정(S. J. Suh) 한국자기학회 1999 韓國磁氣學會誌 Vol.9 No.4
The magnetic properties and the microstructures of the Mn-Ir/Ni-Fe multi layers with various stacking structures and buffer layer materials have been investigated. The (111) texture of Mn-Ir/Ni-Fe was observed in the top structures with Ta, Zr, or Ti buffer materials. However, all Mn-Ir/Ni-Fe mutilayers with top structures exhibit high Hex. regardless of the (111) preferred orientation of Mn-Ir film. The samples whose high Hex observed grain-to-grain epitaxial tendency and the large grain of Mn-Ir film at the interface. It can be explained that the Hex does not depend on the (111) texture of the Mn-Ir film and the interface roughness, but depends on the grain size of the Mn-Ir film and the morphology of the interface between the Mn-Ir and the Ni-Fe grains, and the Hc depends on the the interface roughness between the Mn-Ir and the Ni-Fe films.
김용성(Y. S. Kim),노재철(J. C. Ro),박현순(H. S. Park),서수정(S. J. Suh),김기출(K. C. Kim),송용진(Y. J. Song) 한국자기학회 1998 韓國磁氣學會誌 Vol.8 No.4
We investigated that the fabrication and reproducing signal characteristics of tri-layered magnetoresistance (MR) element for the high density magnetic thin film heads and sensors. Magnetoresistance curve of tri-layered MR element predicted by computer modeling was saturated above external field of -15 Oe~+22 Oe, and it was shifted to linearized region as large as 4 Oe. In the case of fabricated real device, magnetoresistance curve was saturated above external field of ±15 Oe, and it was shifted to linearized region as large as 4 Oe. As shown in real device, MR response curve was in good agreement with the simulation results. As a result of experimental data of reproducing output signal in real device, it retained normal sinusoidal waveforms in 1~4 Oe external magnetic field. In this magnetic field region, the fabricated heads with tri-layered MR element can be operated with good reproduced characteristics. This will be beneficial to the use of efficient processes of manufacturing elements and the vacuum deposition techniques which control thin film properties.
자기저항소자의 바이어스용 Co82Zr6Mo₁₂ 박막의 구조 및 전자기적 특성에 미치는 자장 중 열처리의 영향
김용성(Y. S. Kim),노재철(J. C. Ro),이경섭(K. S. Lee),서수정(S. J. Suh),김기출(K. C. Kim),송용진(Y. J. Song) 한국자기학회 1999 韓國磁氣學會誌 Vol.9 No.2
The effects of annealing in rotating magnetic field after deposition on electromagnetic properties of Co_(82)Zr_6Mo₁₂ thin (200~1200 Å) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity decreases, but 4πMs does not change with increasing the film thickness. The coercivity of the films was decreased below 300 ℃ due to stress relief and decreasing the surface roughness, while increased at 400 ℃ due to partial grain growth. And then, 4pMs was almost independent of annealing temperatures below 200 ℃, but increased from 7.4 kG to 8.0 kG at 300 ℃ and at 400 ℃, which was caused by precipitation and growth of fine Co particles in the films. The electrical resistivity of films was decreased with increasing annealing temperatures and the magnetoresistance was a negative value of nearly 0 μΩ㎝. After annealing at 300 ℃, maximum effective permeability was 1200 to the hard axis of the thin films according to high frequency change. Considering the practical application of biasing layers of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at 300 ℃ in 400 Oe rotating magnetic field.