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이형윤,하성철,유회영,김상남,임상원,문기석 동국대학교 산업기술연구원 1997 산업기술논문집 Vol.9 No.-
This paper describes the discharge parameters in SiH_4 gas calculated for the range of E/N values from 0.5~300(Td) by the Monte Calro simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of the discharge parameters are obtained for the TOF method. The theoretical results of the discharge parameter such as the electron drift velocity, characteristic energy agree with the experimental values for the range of E/N. The electron energy distributions function were analyzed in monosilane at the E/N : 30, 50(Td) for a case of equilibrium region in the mean electron energy. The validity of the results obtained has been confirmed by the TOF method.