http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
이종접합 바이폴라 트랜지스터의 광응답 특성 및 모델링에 관한 연구
김해택,김동명 국민대학교 생산기술연구소 2002 공학기술논문집 Vol.25 No.-
In this work, optoelectronic responses of heterojunction bipolar transistors are characterized. Single and double heterojunction bipolar transistors (HBTs) are employed for the characterization as a function of optical power with a wavelength l=1550nm. InP-based HBTs are fabricated by the transferred-substrate technology. At the expense of complicated fabrication process, It is observed that transferred-substrate HBT has good optical responses. High-speed and high power handling capability of HBTs can also be utilized with transferred-substrate technology with high-performance HBTs.
T. E. Kim,김해택,김대정,D. M. Kim,D. W. Kang,H. S. Park,H. T. Shin,I. C. Nam,J. B. Choi,J. U. Lee,K. H. Kim,K. S. Kim,K. S. Min,S. W. Kim 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.44 No.6
A sub-bandgap photonic gated-diode method was applied to comparatively extract the energydependent, spatial distributions of traps at the SiO2/Si heterojunction interface in MOSFETs before and after electrical stress. The sub-bandgap photonic gated-diode method was also applied to investigate the interface states (Dit, Nit) and the oxide (Qox) trap distributions caused by the channel's hot carrier injection with electrical overstress in an n-MOSFET. An optical source with a sub-bandgap energy less than the silicon bandgap energy (Eph = 0.95 eV < Eg = 1.12 eV) was employed for the photonic characterization of the interface states (Eit) distributed within the photo-responsive energy band (EC - 0.95 Eit EC) in MOS systems. We obtained Dit;max = 2.5 1013 [1/(cm2eV)], Nit;max = 1.65 1014 [1/cm2], and Qox;max = 1.18 1011 [q/cm2]. Through experimental observations with electrical overstress for hot-carrier injection, we observed that the reliability of MOSFETs was dominated more by the interface states than by the oxide trapped charges.
In Cheol Nam,J.U. Lee,K.H. Kim,K.S. Kim,민경식,S.W. Kim,김동명,김대정,G.C. Kang,H.S. Park,김해택,J.B. Choi 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.2
The substrate current is a good indicator for the hot-carrier and electrostatic discharge reliability of MOSFETs. However, the observation of the substrate current induced by generated holes from hot-carrier or impact ionization in dark condition does not objectively oer information on the interface states. By using a sub-bandgap optical source (Eph = 0.95 eV, Popt = 5 dBm, = 1310 nm), electrons on the traps below the Fermi level (Et < EF and EC