http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
TiNiSn기 Half-Heusler 화합물의 고온 열전특성의 최적화
김성웅 ( Sung Wng Kim ),홍성길 ( Sung Kil Hong ),최답천 ( Dap Chun Choi ),( Yoshisato Kimura ),( Yoshinao Mishima ) 대한금속재료학회 ( 구 대한금속학회 ) 2006 대한금속·재료학회지 Vol.44 No.7
The effect of Hf alloying on Ti site, and Sb doping on Sn site for the optimization of high temperature thermoelectric properties of TiNiSn-based compounds was studied. Also, to achieve a low thermal conductivity, a powder metallurgy technique is used for the fabrication of the compounds. It was found that Hf alloying on Ti site reduced the thermal conductivity significantly to a low value of 3.8 W/mK at room temperature. Also, Sb doping on Sn site led to a remarkable enhancement of power factor of 4.1 mW/mK2. Further reduction of thermal conductivity was achieved in hot pressed samples. In hot pressed Ti(0.95)Hf(0.05)NiSn(0.99)Sb(0.01) sample, the dimensionless figure of merit, ZT reaches 0.78 at 770 K.
TiNiSn Half-Heusler 화합물의 열전특성에 대한 열처리 효과
김성웅 ( Sung Wng Kim ),홍성길 ( Sung Kil Hong ),최답천 ( Dap Chun Choi ),( Yoshisato Kimura ),( Yoshinao Mishima ) 대한금속재료학회 ( 구 대한금속학회 ) 2006 대한금속·재료학회지 Vol.44 No.7
A class of intermetallics of MNiSn (M=Ti, Zr Hf) half-Heusler compound is currently of interest as a promising thermoelectric material for application to power generation in high temperature range. We have studied the high temperature thermoelectric properties of TiNiSn half-Heusler compound. The present study reports the effect of heat treatment on high temperature thermoelectric properties of TiNiSn half-Heusler compound. It is shown that the transport properties of TiNiSn compound change from metallic to semiconducting by heat treatments. From the evaluation of microstructure, Seebeck coefficient, electrical resistivity and band gap for the heat-treated TiNiSn compounds, it is revealed that the heat treatment at 1073 K for 2 weeks is the optimum condition. This finding facilitates the research aiming the enhancement of high temperature thermoelectric properties of TiNiSn-based half-Heusler compounds.
Bi<sub>0.48</sub>Sb<sub>1.52</sub>Te<sub>3</sub>의 열전특성에 대한 Pb 도핑 영향
문승필,김태완,김성웅,전우민,김진헌,이규형,Moon, Seung Pil,Kim, Tae Wan,Kim, Sung Wng,Jeon, Woo Min,Kim, Jin Heon,Lee, Kyu Hyoung 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.7
$Bi_2Te_3$-based alloys have been intensively investigated as active materials for thermoelectric power generation devices from low-temperature (< $250^{\circ}C$) waste heat. In the present study, we fabricated Pb-doped, p-type $Bi_{0.48}Sb_{1.52}Te_3$ polycrystalline bulks by using meltsolidification and spark plasma sintering techniques, and evaluated their thermoelectric transport properties in an effort to develop optimized composition for low-temperature power generation applications. The electronic and thermal transport properties of $Bi_{0.48}Sb_{1.52}Te_3$ could be manipulated by Pb doping. As a result, the temperature for a peak thermoelectric performance (zT) gradually shifted toward higher temperatures with Pb content, suggesting that thermoelectric power generation efficiency can be enhanced by controlled Pb doping.