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혀 저항정확도훈련이 만성 뇌졸중 환자의 혀 근력과 구어기능에 미치는 영향
김보중(Bo-Jung Kim),마성룡(Sung-Ryoung Ma) 한국콘텐츠학회 2017 한국콘텐츠학회논문지 Vol.17 No.11
본 연구는 만성 뇌졸중 환자들을 대상으로, 혀의 객관적인 수치로 측정할 수 있는 기계(Iowa Oral Performance Instrument, IOPI)를 사용하여 혀의 최대 저항 훈련프로그램을 수정하고, 혀 정확도 훈련을 추가한 프로그램을 적용하여 혀 근력과 구어기능에 미치는 효과를 비교하고자 실시하였다. 뇌졸중으로 진단받은 입원 및 외래환자를 각각 20명씩 실험군인 혀 저항정확도훈련 치료군과 대조군인 구강안면운동 치료군으로 나누어 각 치료를 대상자들에게 총 4주간 30분씩, 주 5회 실시하였고, 혀 근력과 구어기능 능력을 변화를 알아보기 위해 중재 전, 후에 혀 전방거상 압력(Anterior Tongue Pressure; ATP), 혀 후방거상압력(Posterior Tongue Pressure; PTP), 최대발성시간(Maximum Phonation Time; MPT)을 측정하였다. 본 연구의 결과 중재 전·후 혀 저항정확도훈련 치료군과 구강안면운동 치료군의 혀 근력과 구어기능은 유의하게 향상하였으나, 두 군 사이의 비교에서 혀 저항정확도훈련 치료군과 구강안면운동 치료군 간의 혀근력과 구어기능의 변화량은 유의한 차이가 없었다. 따라서 혀 저항정확도훈련이 기존 구강안면운동 치료보다 혀 근력 및 구어기능 향상에 효과적이지는 않은 것으로 나타났다. The purpose of this study was to evaluate the effect of the tongues maximum resistance training program on the accuracy of the tongue training program using the Iowa Oral Performance Instrument (IOPI) and to compare the effects of tongue muscle strength and spoken language function on objective function. The experiment was diagnosed with stroke hemiplegia divided into tongue pressure strength and accuracy training therapy group and the oromotor exercise therapy group Anterior Tongue Pressure(ATP), Posterior Tongue Pressure (PTP), and Posterior Tongue Pressure (PTP) were measured before and after the intervention to evaluate changes in tongue strength and verbal ability. Maximum Phonation Time (MPT). The results of this study are as follows. There was no significant difference in tongue strength and verbal function between training group and oral facial exercise group. There was no significant difference between tongue strength training and oral facial exercise group. Therefore, it was shown that the tongue pressure strength and accuracy training therapy group was not effective to improve tongue muscle strength and spoken language ability than the oromotor exercise therapy group.
PEALD를 이용한 HfO<sub>2</sub> 유전박막의 Al 도핑 효과 연구
오민정 ( Min Jung Oh ),송지나 ( Ji Na Song ),강슬기 ( Seul Gi Kang ),김보중 ( Bo Joong Kim ),윤창번 ( Chang-bun Yoon ) 한국전기전자재료학회 2023 전기전자재료학회논문지 Vol.36 No.2
Recently, as the process of the MOS device becomes more detailed, and the degree of integration thereof increases, many problems such as leakage current due to an increase in electron tunneling due to the thickness of SiO<sub>2</sub> used as a gate oxide have occurred. In order to overcome the limitation of SiO<sub>2</sub>, many studies have been conducted on HfO<sub>2</sub> that has a thermodynamic stability with silicon during processing, has a higher dielectric constant than SiO<sub>2</sub>, and has an appropriate band gap. In this study, HfO<sub>2</sub>, which is attracting attention in various fields, was doped with Al and the change in properties according to its concentration was studied. Al-doped HfO<sub>2</sub> thin film was deposited using Plasma Enhanced Atomic Layer Deposition (PEALD), and the structural and electrical characteristics of the fabricated MIM device were evaluated. The results of this study are expected to make an essential cornerstone in the future field of next-generation semiconductor device materials.