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MgO 보호막의 결함 전위 레벨이 AC-PDP 방전 특성에 미치는 효과
권상직(Sang Jik Kwon),김용재(Yong Jae Kim),조의식(Eou Sik Cho) 대한전자공학회 2007 電子工學會論文誌-SD (Semiconductor and devices) Vol.44 No.12
본 연구에서는 전자빔 증착의 증착률이 MgO 보호막의 특성과 제작된 PDP의 방전 특성에 주는 영향에 대하여 연구, 분석하였다. MgO 박막을 여러 조건의 증착률로 증착하였고, 이 후 결정 구조, 표면 거칠기, 박막 구조와 같은 특성을 XRD, AFM 등을 사용하여 측정, 평가 하였다. 실험 결과와 Paschen law을 통해서 5 A/sec의 증착률에서 이차전자방출이 최대가 되는 것을 확인할 수 있었으며, 동일 조건에서 방전 전압이 가장 작고, 발광 효율은 가장 큰 값을 갖는 것이 확인되었다. 또한 5A/sec의 (200) 결정 방향과 F? center 측정값도 가장 높게 측정되었다. XRD와 CL 스펙트럼의 결과를 통하여 이차전자방출계수가 MgO 박막의 분자 결정상의 F/F+ centers구조와 관련 있음을 확인할 수 있었다. The effects of the evaporation rate of MgO films using an electron beam on the MgO properties and the discharge characteristics of a plasma display panel(PDP) were investigated and analyzed. MgO films were deposited with the various MgO evaporation rates. The MgO properties such as the crystal orientation, the surface roughness, and the film structure, were inspected using XRD(X-ray diffractometry), AFM(atomic force microscopy). From the experiments and Paschen law, the maximum value of the secondary electron emission coefficient () was obtained at the evaporation rate of 5 A/sec. The minimum firing voltage and the maximum luminous efficiency were obtained at an evaporation rate of 5 A/sec. In the MgO film deposited at 5 A/sec, the (200) orientation and F? center were most intensive. The XRD results and cathode-luminescence(CL) spectra show the values are correlated with F/F+ centers of the molecular structure of MgO films.
Oxygen Ion Beam Assisted Deposition법에 의해 형성된 AC PDP용 MgO 보호막의 특성 연구
권상직,이조휘,Kwon, Sang-Jik,Li, Zhao-Hui 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.7
MgO layer plays an important role for plasma display panels (PDPs). In this experiment, ion beam assisted deposition (IBAD) methode was uesed to deposit a MgO thin film and the assisting oxygen ion beam energy was varied from 100 eV to 500 eV. In order to investigate the relationship between the secondary electron emission and the defect levels of the MgO layer, we measured the cathodoluminescence (CL) spectra of the MgO thin films, and we analyzed the CL peak intensity and peak transition. The results showed that the assisting ion beam energy played an important role in the peak intensity and the peak transition of the CL spectrum. The properties of MgO thin film were also analyzed using XRD and SEM, these results showed the assisting ion beam energy had direct effect on characteristics of MgO thin film.
권상직,장찬규,Kwon, Sang-Jik,Jang, ChAn-Kyu 한국반도체디스플레이기술학회 2005 반도체디스플레이기술학회지 Vol.4 No.3
The effects of the base vacuum level on a plasma display panel (PDP) produced by the vacuum in-line sealing technology were investigated. The main equipment of the vacuum in-line sealing process consists of the sealing chamber, pumping systems for evacuating, mass flow controller for introducing the plasma gases, and other measuring systems. During the sealing process, the impurity gases were fully evacuated and the panel was prevented from the adsorption of impurity gases. As a result, the brightness increased as the impurity gas density decreased, so we found that the vacuum in-line sealing process was more efficient technology an the conventional sealing process.
진공에서 소성 가능한 프릿을 이용한 평판디스플레이 진공실장기술
권상직,유인상,Kwon, Sang Jik,Yoo, In Sang 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.3
One of the important issues for fabricating the microelectronic display devices such as FED, PDP, and VFD is to obtain a high vacuum level inside the panel. In addition, sustaining the initial high vacuum level permanently is also very important. In the conventional packing technology using a tabulation method, it is not possible to obtain a satisfiable vacuum level for a proper operation. In case of FED, the poor vacuum level results in the increase of operating voltage for electron emission from field emitter tips and an arcing problem, resultantly shortening a life time. Furthermore, the reduction of a sealing process time in the PDP production is very important in respect of commercial product. The most probable method for obtaining the initial high vacuum level inside the space with such a miniature and complex geometry is a vacuum in-line sealing which seals two glass plates within a high vacuum chamber. The critical solution for the vacuum sealing is to develop a frit glass to avoid the bubbling or crack problems during the sealing process at high temperature of about $400^{\circ}C$ under the vacuum environment. In this study, the suitable frit power was developed using a mixture of vitreous and crystalline type frit powders, and a vacuum sealed CNT FED with 2 inch diagonal size was fabricated and successfully operated.
고효율 PDP를 위한 진공 인라인 실장에서의 MgO 보호막 영향분석
권상직,장찬규,Kwon, Sang-Jik,Jang, Chan-Kyu 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.11
We have examined the electrical and optical characteristics of the plasma display panel produced by vacuum in-line sealing technology. In the MgO layer deposited at room temperature, after sealing at the panel temperature of $430^{\circ}C$, the luminous efficiency decreased compared with that of the panel before sealing. Moreover, firing and sustain voltage of the sealed panel increased compared with that of the panel before sealing. This was resulted from that the MgO protective layer was cracked by the softening of the dielectric layer during the sealing process. In order to avoid the MgO crack during the vacuum in-line sealing, thermally stable MgO layer or lower temperature sealing is required.
CBD 방법에 의한 ZnS 버퍼층 형성의 착화제 농도에 따른 영향
권상직,유인상,Kwon, Sang Jik,Yoo, In Sang 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.10
ZnS was chemically deposited as a buffer layer alternative to CdS, for use as a Cd-free buffer layer in $Cu(In_{1-x}Ga_x)Se_2$ (CIGS) solar cells. The deposition of a thin film of ZnS was carried out by chemical bath deposition, following which the structural and optical properties of the ZnS layer were studied. For the experiments, zinc sulfate hepta-hydrate ($ZnSO_4{\cdot}7H_2O$), thiourea ($SC(NH_2)_2$), and ammonia ($NH_4OH$) were used as the reacting agents. The mole concentrations of $ZnSO_4$ and $SC(NH_2)_2$ were fixed at 0.03 M and 0.8 M, respectively, while that of ammonia, which acts as a complexing agent, was varied from 0.3 M to 3.5 M. By varying the mole concentration of ammonia, optimal values for parameters like optical transmission, deposition rate, and surface morphology were determined. For the fixed mole concentrations of $0.03M\;ZnSO_4{\cdot}7H_2O$ and $0.8M\;SC(NH_2)_2$, it was established that 3.0 M of ammonia could provide optimal values of the deposition rate (5.5 nm/min), average optical transmittance (81%), and energy band gap (3.81 eV), rendering the chemically deposited ZnS suitable for use as a Cd-free buffer layer in CIGS solar cells.
고효율 PDP 제작을 위한 진공 인라인 실장에서의 초기 진공도에 따른 방전특성 분석
권상직,장찬규,김용재,Kwon Sang Jik,Jang Chan-Kyu,Kim Yong-Jae 한국진공학회 2006 Applied Science and Convergence Technology Vol.15 No.1
진공 인라인 실장기술에 의해 제조된 프라즈마 디스플레이 패널(PDP)의 전기적 및 광학적 특성을 분석하였다. 분석결과, 초기 진공도가 증가함에 따라 발광효율이 증가함을 확인하였다 즉, $1\times10^{-3}$ torr의 진공도인 경우에 대해서는, 동작전압이 235 V(방전가스의 압력을 400 Torr일 경우) 이고 발광효율이 0.8 1n,/W(180 V의 유지전압에 대해) 인데 반해 초기 진공도가 $1\times10^4 torr$일 경우에 대해서는, 동작전압이 215V로 낮아졌고 발광효율은 2.5lm/W로 향상되었음을 확인하였다. 더불어, 진공 인-라인 실장 방법을 이용하여 tip-]ess형 PDP 동작 패널을 성공적으로 제조할 수 있었다. We have examined the electrical and optical characteristics of the plasma display panel(PDP) produced by vacuum in-line sealing technology. We found that the luminous efficiency was decreased as the base vacuum level was increased. For the base vacuum level of $1\times10^{-3}$ Torr, the firing voltage was 235V at the discharge gas pressure of 400 Torr and the luminous efficiency was 0.8 lm/W at 180V sustaining pulse. However, for the base vacuum level of $1\times10^{-6}$ Torr, the firing voltage was reduced to 215V and the luminous efficiency was improved to 2.5lm/w. Finally, we demonstrated successfully the operation of tip-less PDP fabricated using vacuum in-line sealing method.
아르곤 이온빔을 이용한 CNT 페이스트 에미터의 표면처리에 관한 연구
권상직,Kwon, Sang-Jik 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.5
In this study, a surface treatment method using accelerated Ar ions was experimented for exposing the carbon nanotubes (CNT) from the screen-printed CNT paste. After making a cathode electrode on the glass substrate, photo sensitive CNT paste was screen-printed, and then back-side was exposed by UV light. Then, the exposed CNT paste was selectively remained by development. After post-baking, the remained CNT paste was bombarded by accelerated Ar ions for removing some binders and exposing only CNTs. As results, the field emission characteristics were strongly depended on the accelerating energy, bombardment time, and the power of RF plasma ion source. When Ar ions accelerated with 100 eV energy from the 100 W RF plasma source are bombarded on the CNT paste surface for 10 min, the emission level and the uniformity were best.