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90 nm급 텅스텐 폴리사이드 게이트 식각공정에서 식각종말점의 안정화에 관한 연구
고용득,천희곤,이징혁,Ko, Yong-Deuk,Chun, Hui-Gon,Lee, Jing-Hyuk 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.3
The device makers want to make higher density chips on the wafer through scale-down. The change of WSix/poly-Si gate film thickness is one of the key issues under 100 nm device structure. As a new device etching process is applied, end point detection(EPD) time delay was occurred in DPS+ poly chamber of Applied Materials. This is a barrier of device shrink because EPD time delay made physical damage on the surface of gate oxide. To investigate the EPD time delay, the experimental test combined with OES(Optical Emission Spectroscopy) and SEM(Scanning Electron Microscopy) was performed using patterned wafers. As a result, a EPD delay time is reduced by a new chamber seasoning and a new wavelength line through plasma scan. Applying a new wavelength of 252 nm makes it successful to call corrected EPD in WSix/poly-Si stack-down gate etching in the DPS+ poly chamber for the current and next generation devices.
SF6와 SF6-N2 가스를 이용한 텅스텐 박막의 플라즈마 식각에 관한 연구
고용득,천희곤,조동율,정광진,최성호,구경완 한국센서학회 1999 센서학회지 Vol.8 No.3
The plasma etching of tungsten thin films has been studied with SF_6 gas in RIE system. The etch rate of a - phase W film with SF_6 gas plasma has been showed to depend strongly on process parameters (SF_6, SF_6-N₂ gas). Effect of Nz addition and etching selectivity between W film and photoresist have also been studied in detail. Etching profiles between W film and photoresist were investigated by SEM. The compounds on W surface after SF_6-N₂ gas plasma treatment were examined by XPS and the concentration of F ions was detected by OES during plasma on.
고용득,송재호,장일영,이승원 金烏工科大學校 1996 論文集 Vol.17 No.-
The purpose of this experimental study was carried out for the estimate of the properties of underwater non-segregation concrete. Properties of antiwashout underwater concrete is different from other type of concrete and the selection of cement types is greatly dependent on the structural requirement and construction location associated with control compressive strength and modulus of rupture Based on this, this study addresses the comparison of physical properties of concrete according to the use of different cement types. It is also recommended to select a proper cement type depending ton structural characteristics. Rational analytic formula for the modulus of rupture is to predicted from compressive strength of concrete cylinder.
장일영,고용득,윤영수 金烏工科大學校 1996 論文集 Vol.17 No.-
An experimented study was carried out for the estimate of the bond strength property of underwater non-segregation concrete. The action of bond force and slip are affected by various factors. Bond is made up of three components of chemical adhesion and friction, mechanical interaction between concrete and steel. But properties of underwater non-segregation concrete is different from other type of concrete. This study addresses the comparison of physical properties of concrete according to the use of different cement types. It is also recommended to select a proper cement type depending on structural characteristics. Rational analytic formula for the modulus of rupture and bond stress are to be predicted from compressive strength of concrete.
$UV/O_3$을 이용한 Si contact hole 건식세정에 관한 연구
최진식,고용득,구경완,김성일,천희곤 한국전기전자재료학회 1997 電氣電子材料學會誌 Vol.10 No.1
The UV/O$_{3}$ dry cleaning has been well known in removing organic molecules. The UV/O$_{3}$ dry cleaning method was performed to clean the Si wafer surfaces and contact holes contaminated by organic molecules such as residual PR. During the cleaning process, the Si surfaces were analyzed with X-ray photoelectron spectroscopy (XPS), atomic force microscope (AFM) and ellipsometer. When the UV/O$_{3}$ dry cleaning at 200'C was performed for 3 minutes, the residual photoresist was almost removed on Si wafer surfaces, but Si surfaces were oxidized. For UV/O$_{3}$ application of contact hole cleaning, the contact string were formed using the equipment of ISRC (Inter-university Semiconductor Research Center). Before Al deposition, UV/O$_{3}$ (at 200.deg. C) dry cleaning was performed for 3 minutes. After metal annealing, the specific contact resistivity was measured. Because UV/O$_{3}$ dry cleaning removed organic contaminants in contact holes, the specific contact resistivity decreased. Each contact hole size was different, but the specific contact resistivities were all much the same. Thus, it is expected that the UV/O$_{3}$ dry cleaning method will be useful method of removal of the organic contaminants at smaller contact hole cleaning.