http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Wireless power transfer using resonance with small resonator
김용해(Yong-Hae Kim),강승열(Seung-Youl Kang),전상훈(Sanghoon Cheon),이명래(Myung-Lae Lee),윤재훈(Je-Hoon Yun),조인귀(In-Kui Cho),문정익(Jung-Ick Moon),김성민(Seong-Min Kim) 대한전기학회 2010 대한전기학회 학술대회 논문집 Vol.2010 No.10
We investigate the wireless power transmission characteristics through resonant coupling using small resonator. To reduce the device's size, we used the 4-layer PCB resonator for the sending part. As the geometry of resonator is reduced, the impedance matching becomes more important. By tuning the power coil's length, we can succeed to obtain the reflection free condition.
문석환(Seok-Hwan Moon),황건(Gunn Hwang),강승열(Seung-Youl Kang),조경익(Kyoung-Ik Cho) 대한설비공학회 2010 설비공학 논문집 Vol.22 No.9
Recently, a problem related to the thermal management in portable electronic and telecommunication devices is becoming issued. That is due to the trend of a slimness of the devices, so it is not easy to find the optimal thermal management solution for the devices. From now on, a pressed circular type cooling device has been mainly used, however the cooling device with thin thickness is becoming needed by the inner space constraint of the applications. In the present study, the silicon flat plate type cooling device with the separated vapor and liquid flow path was designed and fabricated. The normal isothermal characteristics created by vapor-liquid phase change was confirmed through the experimental study. The cooling device with 70 mm of total length showed 6.8 W of the heat transfer rate within the range of 4∼5℃/W of thermal resistance. In the future, it will be possible to develop the commercialized cooling device by revising the fabrication process and enhancing the thermal performance of the silicon and glass cooling device.
기계 - 화학적 연마 공정을 이용한 실리콘 전계방출 어레이의 제작
이진호(Jin Ho Lee),송윤호(Yoon-Ho Song),강승열(Seung Youl Kang),이상윤(Sang Yun Lee),조경익(Kyoung Ik Cho) 한국진공학회(ASCT) 1998 Applied Science and Convergence Technology Vol.7 No.2
본 연구에서는 기계-화학적 연마(Chemical-Mechanical-Polishing: CMP)공정을 이용하여 게이트 전극을 가지는 실리콘 전계방출 소자를 제작하였으며, 또한 그 전자방출 특성을 분석하였다. 실리콘 전계방출 소자를 제작하기 위해 실리콘을 두단계로 이루어진 건식식각과 산화공정으로 팁을 뾰족하게 만들었으며, 게이트를 형성하기 위하여 고 선택비를 가지는 CMP 공정을 사용하였으며, 연마 시간과 연마 압력의 변화로 게이트 높이와 개구의 직경을 쉽게 조절할 수 있었다. 또한, CMP공정시 발생되는 디싱(dishing)문제를 산화막 마스킹을 사용함으로 해결하여 자동 정렬된 게이트전극의 개구를 깨끗하게 형성할 수 있었다. 제작된 에미터의 높이와 팁끝의 반경은 각각 1.1 ㎛, 100 Å 정도이며, 제작된 2809개의 팁 어레이로 80 V의 게이트전압에서 31 ㎂의 방출전류를 얻을 수 있었다. The fabrication process and emission characteristics of gated silicon field emitter arrays (FEAs) using chemical-mechanical-polishing (CMP) method are described. Novel fabrication techniques consisting of two-step dry etching with oxidation of silicon and CMP processes were developed for the formation of sharp tips and clear-cut edged gate electrodes, respectively. The gate height and aperture could be easily controlled by varying the polishing time and pressure in the CMP process. We obtained silicon FEAs having self-aligned and clear-cut edged gate electrode opening by eliminating the dishing problem during the CMP process with an oxide mask layer. The tip height of the finally fabricated FEAs was about 1.1 ㎛ and the end radius of the tips was smaller than 100 Å. The emission current measured from the fabricated 2809 tips array was about 31 ㎂ at a gate voltage of 80 V.