http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
TiO₂와 GaN를 이용한 Schottky diode의 제작 및 특성평가
유경호(Kyungho Yoo),강광선(Kwangsun Kang),김재환(Jaehwan Kim) 대한기계학회 2009 대한기계학회 춘추학술대회 Vol.2009 No.11
Poly(3,4-ethylenedioxythiophene):poly (styrenesulphonate) (PEDOT:PSS) have been paid great attention for various application fields. Schottky diodes were fabricated using four different concentrations of TiO₂ in PEDOT:PSSsolutions. The forward current increased as the TiO₂ concentration increased, and the enhancement of forward current was nearly four orders of magnitude with respect to pristine PEDOT:PSS Schottky diode. To fabricate GaN Schottky diode, Ga₂O₃ nanorods were fabricated. The conversion of gallium oxide to gallium nitride is important due to the variety of application fields of GaN including ultra-violet and blue light emitting diodes. Two different synthetic routes have been employed to fabricate the gallium oxide. Energy dispersive spectroscopy (EDS) was performed to analyze the composition. The X-ray diffraction (XRD) pattern of gallium oxide and GaN can be assigned to orthorhombic GaO(OH) and hexagonal wurtzite structure GaN, respectively.
졸-겔 방법으로 제조한 ZnO 쇼트키 다이오드의 특성 연구
한광준(Kwangjoon Han),강광선(Kwangsun Kang),김재환(jaehwan Kim) 대한기계학회 2008 대한기계학회 춘추학술대회 Vol.2008 No.11
ZnO thin films with preferred orientation along the (0 0 2) plane were fabricated by a sol-gel method. The effects of the annealing temperature, time, and thickness were studied by investigating UV-visible spectra, FT-IR spectra, and XRD of ZnO films. The films were dried and annealed at 100 ℃, 200 ℃, and 300 ℃ for 1hr, 2hrs, and 3hrs, respectively. The film showed the preferred (0 0 2) orientation and high transmittance near 90% in the visible range. Also, SEM images of the films exhibited very smooth surfaces without holes and cracks. Schottky diodes were fabricated by using ZnO sol-gel material. Au and Al were used as electrodes to make Ohmic and Schottky contacts, respectively. The annealing temperature, time and the thickness dependent I-V characteristics were presented in this article.