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琴彩 忠南大學校 1962 論文集 Vol.5 No.-
These experiments were carried out the calculation of mobility in the thin film of InSb. The mobility was computed to the range of 1200∼1250 ㎠/Volt-sec. The thickness of the thin film was 2131Å, which was determined by the method of Tolansky multiple Beam Interferometry. The author found out the crystallite size, 550∼600Å, on the electro-photograph of the thin film. This value shows as agreement with one of the Koikes which was determined by the X-ray method.
Potassium Halide 및 Lead Halide 단결정에 첨부된 Tb^3+ 칼라센터에 관한 분광학적 연구
금채,장충근,김유배,강준길 충남대학교 기초과학연구소 1991 연구논문집 Vol.11 No.-
KI 및 PbI_2 단결정에 첨가된 Tb^3+ 칼라센터의 들뜸스펙트럼 및 방출스펙트럼을 극저온에서 측정하였고, 방출스펙트럼의 온도의존성을 측정하여 Tb^3+ 칼라센터의 광학적 특성을 규명하였다. Judd-Ofelt 이론에 의한 강도계수를 유도하여 측정된 광학적 과정을 활당하였다. KI:Tb^3+ phosphor에서는 I- 이온에 의한 charge transfer band가 관찰되었으며, PbI_2:Tb^3+에서는 Tb^2+ 이온의 들뜬에너지 준위 (sp)와 Tb^3+의 ^5D_4 준위간의 교차현상이 방출과정에 중요한 역할을 하고 있다. Excitation and emission spectra from Tb^3+ color centers doped in KI and PbI_2 single crystals were measured at very low temperature, and temperature dependence of the emission spectrum also were measured to reveal the optical properties of Tb^3+ color centers. The intensity parameters, calculated on the basis of Judd-Of theorem, led us to assign the observed optical process of Tb^3+ color centers. In the case of KI:Tb^3+ phosphor, the charge transfer band attributed to transitions from I- to Tb^3+ were observed, and in the case of PbI_2:Tb^3+ the crossing between the sp excited electronic state of Tb^2+ ion and the 5D4 state of Tb^3+ ion could play a key role in the emitting processes.
금채,이기선,허복회,김유배,이병주 충남대학교 기초과학연구소 1996 忠南科學硏究誌 Vol.23 No.2
In the visible region of spectral distribution, the photoconductivity of long wavelength in amorphous Se thin films showed an increase but that of short wavelength showed a decrease. After the sample was illuminated with high intensity white light for three hours at low temperature, we observed that the magnitude of the photoconductivity depended only on the spectral composition of the incident light and the dark conductivity showed a strong dependence on the wavelength to which the sample had been exposed beforehand at 100 K, which is called an anomalous photoconductivity. We believe that the mercuries in amorphous selenium film have generated the long-life traps contributing to the anomalous photoconductivity of samples. The height of the barrier generated by the long life traps was 2.4 eV
CdTe-CdS薄膜의 Photoluminescence 測定
琴彩,金東奭 충남대학교 자연과학연구소 1988 忠南科學硏究誌 Vol.15 No.1
CdTe and CdTe-CdS thin films are growned in 10^-6 torr by the vacuum evaporation method. The photoluminescence spectra of these films are measured at low temperature. In CdTe thin film, the photoluminescence peak os observed at 1.45 eV. This peak is associated with donor-acceptor pair transition and is separated in two peaks. The separation of the peak is caused by LO-phonon emission of which energy is 22meV. The intensity of the peak is decreased with increase of temperature. In CdTe-CdS thin films, two photoluminescence peaks are observed at 1.46 eV, 1.51 eV. The peak ar 1.46 eV is associated with the donor-acceptor pair transition. The peak at 1.51 eV is probably associated with negative charge complex. [Te-S]^-2. The position of peaks are varied with the quantity of CdS.
CdTe와 HgI_2(화합물 반도체)의 Photoacoustic Spectrum에 관한 연구
금채,이종화 충남대학교 자연과학연구소 1983 忠南科學硏究誌 Vol.10 No.1
We measured the energy band gap of CdTe and HgI_2 powder of which were 1.42eV and 2.18eV respectively using the photoacoustic spectrometer.
Photoacoustic 분광기의 성능 개발과 화합물 반도체 및 비정질 고체에 대한 그의 응용
금채 충남대학교 자연과학연구소 1982 忠南科學硏究誌 Vol.9 No.1
A new Photoacoustic cell was devised using stainless steel of low heat capacity. Its Photoacoustic spectroscopic characteristics were tested for the light source of Hg-arc lamp, Xe-arc lamp and tungsten lamp. The air column in the PA-cell was kept with in 5mm in length and the light chopping frequency was 2.0∼30Hz. We measured the energy band gaps of CdS, CdSe, ZnS, CdO and Fe_2O_3 powder and CdS, CdSe filming using the new PA-cell.
Fe-Ni에 Si와 Cr을 첨가한 박막의 자기적 특성에 관한 연구
금채,이명섭,전관수 충남대학교 자연과학연구소 1989 忠南科學硏究誌 Vol.16 No.1
Alloy thinfilms-Fe_50 Ni_59, Fe_47.5Ni47.5 Si47.5, Fe_47.5Ni_47.5 Cr_47.5- have been made by DC sputtering method. The electric and magnetic properties of alloy thinfilms have been measured between 100K and 300K. The temperature coefficients of resistivity of Fe_50Ni_50 was 0.7053 10^-6/K, that of Fe_47.5 Ni_47.5 Si_47.5 was 0.693 10^-6/K, that of Fe_47.5Ni_47.5 Cr_47.5 was 1.8363 10^-6/K. The magnetic properties of Fe-Ni compound containing Si have been better and Fe-Ni compounds containing Cr have had low electric resistance and high coercivity.
琴彩 충남대학교 자연과학연구소 1975 學術硏究誌 Vol.2 No.2
Photoelectric properties of a CdS_(50)-CdSe_(50) single crystal has intermediate properties from the characteristics of CdS to the characteristics of CdSe with a band gap energy 1.95 ev. This crystal has a sensitizing center which lies about 0.2 ev above the valence Land and the thermal quenching effect observed near 70℃ is higher than that of the CdSe single crystal.
琴彩 충남대학교 자연과학연구소 1976 學術硏究誌 Vol.3 No.2
Photovoltage and thermal quenching effect of CdSe thin films are investigated, using the thin films deposited on 200℃~230℃ substrates by vacuum evaporation of pure CdSe powder with source temperature kept in a range of 580℃~620℃ during the evaporation. The maximum peak in the spectral sensitivity curl-e is observed at 710 mμ-725 mμ which corresponds to the band gap of CdSe single crystal. The thermal quenching effect is observed near 5O℃ which is lower than that of CdS thin film.
금채,허복희,김유배,이병주 충남대학교 기초과학연구소 1995 忠南科學硏究誌 Vol.22 No.2
The effect of mercury impurities in amorphous selenium films have been observed. The photoconductivity of amorphous selenium films activated with mercury have been observed negatively at room temperature, and it was changed positively at low temperature. The energy band gap of amouphous selenium films doped with mercury impurities was decreased from 2.1eV to 2.03eV, and the depth of mercury traps was about 2.26 eV.