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코로나 시대 이란의 음악교육 체계 변화: 테헤란 여자 음악학교 사례를 근거로
이기선 세계음악학회 2022 음악과 문화 Vol.- No.46
This study is about the history, the major, the curriculum, the current status of education since Covid-19 focusing on Tehran music school(girls branch) located in Teheran, Iran. Since the Islamic Revolution in 1979, Iran has strictly been under control of government regardless of the field of classical, traditional, and popular music. Therefore, music subject was not educated separately in the curriculum of the general elementary, middle, and high schools except for a few private schools, and because of this reason, it is very hard to explore the current status of music education in the public education of Iran. However, students who want to study or to major in music still can enter related music schools to have professional education, so it is still possible to study the current status of music education by it. Tehran music school located in Teheran, the capital of Iran, is a prestigious music school with a history of more than about a century. Since the established in 1914, the name of the school and the curriculum has reorganized. So, now the school is divided and operated into boys and girls separately. Since the spread of Covid-19, Tehran music school(girls branch) has been conducting both face-to-face and non-face-to-face classes, and non-face-to-face classes have been conducted from March 2020 to August 2021, and since September 2021, both face-to-face and non-face-to-face classes have been conducted. The teaching methods of face-to-face and non-face-to-face classes are similar with other music middle and high schools since Covid-19, so it was confirmed that the school follows the global educational trends. Moreover, there were some problems, for example, the use of government-provided “Shad” platforms being not familiar in the early non-face-to-face classes as well as other factors such as slow internet speed and unstable connection, pointed out. Moreover, other major issues, for instance, the lack of infrastructure, the spread of Internet networks, the government’s regulation of Internet speed, the lack of educational restrictions like laptops and mobile phones for students in poor areas, have emerged as well. The changes in the education field because of Covid-19 are still in progress, and this remote education system will continue in the future. Therefore, the efforts of Iranian government for improvement of many problems sincerely need to establish stable Internet infrastructure system, provide an appropriate environment for art education classes, and develop user-friendly educational platforms. This study is meaningful as a basic study because there is no any other research related to music education in Iran and nothing has not been introduced in Korea yet, so based on this study, it hopes to continue discussions on the music environment of Islamic culture countries as well as understanding the current status of music education in Iran. .
Sputtering법으로 제조된 Tungsten Nitride 박막의 저항변화에 미치는 급속 열처리 영향
이기선 공주대학교 자원재활용 신소재 연구센터 1999 1차년도 센터 성과집 Vol.1999 No.-
비정질 WNx 박막이 반응성 스퍼터링법으로 제조되었다. 비정질 형성을 위한 질소의 농도범위는 10~40at%이었다. 비정질 W67N33박막은 1273K에서 1분 동안 급속 열처리되어 저항이 낮은 동축정의 α-텅스텐 상과 과잉의 질소로 변태되었다. 이러한 박막의 저항은 순수한 텅스텐 박막과 유사하였다. α-텅스텐 상으로부터 방출된 과잉의 질소는 α-텅스텐/다결정 실리콘의 계면에 편석되었다. 편석된 질소는 Si₃N₄나노 결정으로 균일한 확산 장벽층을 형성시켰고, 저항이 높은 텅스텐 실리사이드의 반응을 억제하였다. The amorphous tungsten nitrides, WNx film could be fabricated by reactive sputtering process. The nitrogen concentration for the amorphization ranges from 10 at% to 40 at%. The amorphous W67N33 film was crystallized into low resistivity α-tungsten phase with equiaxed grains and excess introgen after the rapid thermal annealing for 1 min at 1273K, which was similar to the resistivity of the sputtered pure tung ten film. The excess nitrogen was dipleted from α-tungsten crystals and then segregated at α-tungsten/poly-Si ir terface. The segregated nitregen has favored the formation of the homogeneous diffusion barrier layer comprised of silicn nitrid, Si₃N₄ nano-crystals, which undertaken the inhibition of the high resistivity tungsen silicide reaction.
Magnetron sputtering 법으로 제조된 Al-1%Cu/Tungsten Nitride 다층 박막
이기선,김장현,서수정,김남철,Lee, Gi-Seon,Kim, Jang-Hyeon,Seo, Su-Jeong,Kim, Nam-Cheol 한국재료학회 2000 한국재료학회지 Vol.10 No.9
표면 탄성과 디바이스의 전극재료로 사용되는 Al-%Cu(4000$\AA$)/tungsten nitride 박막을 magnetron sputtering 법으로 제조하고 전기저항을 평가한 비정질상의 tungsten nitride 박막을 제조할 수 있었고, 비정질 형성을 위해 질소비(R =$N_2$/(Ar+$N_2$)가 10~40% 정도 필요하다. Tungsten nitride 박막의 잔류응력은 비정질이 형성되면서 급격히 감소되었다. 이러한 비정질 박막위에 Al-1%Cu 합금막이 형성되었다. 다층막은 453K에서 4시간 동안 열처리함으로써 $3.6{\mu}{\Omega}-cm$의 저항을 나타냈는데, 이는 박막내 결정립 성장과 결함의 감소에 기인하였다. As a power durable-electrode in SAW filter, Al-1%Cu/tungsten nitride multi-layer thin film was fabricated by magnetron sputtering process. Tungsten nitride films had the amorphous phase at the nitrogen ratio, R, ranging from 10~40%. The amorphization could be controlled by nitrogen ratio, R= $N_2$/($N_2$+Ar) as a sputtering process parameter. Residual stress in tungsten nitride abruptly decreased with the formation of amorphous phase. Al-1%Cu thin film was deposited on the amorphous tungsten nitride. After the multi-layed thin film was annealed for 4 hours at 453K, the resistivity decreased as $3.6{\mu}{\Omega}-cm$, which was due to grain growth reduced crystal defects.
Magnetron sputtering법으로 제조된 Al-1%Cu/Tungsten Nitride 다층 박막
이기선,서수정,김장현,김남철 공주대학교 자원재활용신소재지역협력센터 2000 2차년도 센터 사업 성과집 Vol.2000 No.1
표면 탄성파 디바이스의 전극재료로 사용되는 Al-1%Cu(4000Å)/tungsten nitride 박막을 magnetron sputtering법으로 제조하고 전기저항을 평가한 결과 비정질상의 tungsten nitride 박막을 제조할 수 있었고, 비정질 형성을 위해서 질소비 (R = N2/(Ar+N2))가 10∼40% 정도 필요하였다. Tungsten nitride 박막의 잔류응력은 비정질이 형성되면서 급격히 감소되었다. 이러한 비정질 박막위에 Al-1%Cu합금막이 형성되었다. 다층막은 453K에서 4시간 동안 열처리함으로써 3.6μΩ-cm의 저항를 나타냈는데, 이는 박막내 결정립 성장과 결정 결함의 감소에 기인하였다. As a power durable-electrode in SAW filter. Al-1%Cu/tungsten nitride multi-layer thin film was fabricated by magnetron sputtering process. Tungsten nitride films had the amorphours phase at the nitrogen ratio, R, ranging from 10~40%. The amorphization could be controlled by nitrogen ratio. R = N2/(N2+Ar) as a sputtering process parameter. Residual stress in tungsten nitride abruptly decreased with the formation of amorphous phase. Al-1%Cu thin film was deposited on the amorphous tungsten nitride. After the multi-layed thin film was annealed for 4 hours at 453K, the resistivity decreased as 3.6 μΩ-cm, which was due to grain growth and reduced crystal defects.