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Tungsten 中間層을 使用한 Permalloy薄膜에 關한 硏究
洪鳳植 충남대학교 공업기술개발연구소 1976 工業技術開發硏究所論文集 Vol.3 No.2
The magnetic properties of wire memory depends on the surface condition of the substrate (Cu). Particularly, the problem of surface condition of the electrodeposited magnetic film is more critical than that of the vacuum evaporated one. In this paper, to improve the magentic properties of wire memory, the tungsten film is electrodeposited between substrate and magnetic film. The permalloy magnetic film in which the tungsten film is electrodeposited, improves remakably the magnetic properties. So this type of permally magnetic film can be effectively used for the memory element.
NAND Gate만을 使用한 同期 論理回路의 設計에 關한 硏究
洪鳳植,吳承燁 충남대학교 공업기술개발연구소 1974 工業技術開發硏究所論文集 Vol.1 No.1
This paper deals with the design of Flip-Flop circuits with only NAND Gates. In particular, the design of the JK Flip-Flop is discussed by the solutions of the Logic equation and Transition Method. And these theories are applied for synchronous Logic circuits in experiments. Its stability is very good at required frequency ; 20kHz, and the results agree with the theory. It is expected to study the synchronous sequential logic circuits for NAND Gates increasing of this type.
정신과학 임상실습 후 의학전문대학원생들과 의과대학생들의 환자중심태도 변화 비교
홍봉식,서정석,김동욱,문석우,김태호 한국의학교육학회 2009 Korean journal of medical education Vol.21 No.2
Purpose: The aim of this study was to compare patient-centeredness changes between medical school graduates and medical students after a psychiatric clinical clerkship. Methods: We focused on 40 medical school graduates. We received permission to use data from a 2006 study on patient-centeredness of 94 medical students. The following was repeated before and after clerkship: Minnesota Multiphasic Personality Inventory (MMPI), Meyers-Briggs type indicator (MBTI), Patient-practitioner Orientation Scale (PPOS) and Authoritarian Personality (AP) scale. Results: In the 2006 study on patient-centeredness of medical students, the AP scores were significantly lower than before clerkship and the PPOS scores were significantly higher than before clerkship. AP score changes were related to MBTI, correlated with MMPI subscales, but inversely correlated with PPOS changes. In this study, the change in PPOS scores was not significant after clerkship in case of medical school graduates. AP score changes inversely correlated with PPOS changes, but neither correlated with MMPI subscales or MBTI. Conclusion: Considering previous findings, medical school graduates tend to be more patient-centered than medical students, but medical students can adopt a more patient-centered attitude than graduates through a psychiatric clinical clerkship.
PSG막내 인(P)의 얕은 접합 형성을 통한 LDD형 nMOSFET의 제작에 관한 연구
류장렬,홍봉식 忠南大學校 産業技術硏究所 1994 산업기술연구논문집 Vol.9 No.1
The current trend of I.C technologies has reached at ULSI level, with the minimum feature size in the sub-half micron. Such high density I.Cs require divices which have shallower junction, higher doping concentration, thinner dielectrics and reduced defect densities. The most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defects and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep junction. These make it more difficult to form the shallow junction. Accordingly, to minimize impurity redistribution, the thermal-budget should be kept minimum, that is, RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weight%, times and temperatures of RTA. SIMS, ASR and 4-point probe measurement were used to analyze the diffused characteristics. From the results, it was found that low sheet resistance below 100Ω/□and shallow junction depths below 0.2㎛ can be obtained and the surface concentrations measured by SIMS analysis was shown to range from 2.5x10 atoms/㎤ to 3x10 atoms/㎤. Characteristics of LDD-structured nMOSFET with phosphorus junctions formed by RTA process have been investigated. The junction depths and the concentration of N- region were about 0.1㎛, 2.5x10 atoms/㎤, 4x10 atoms/㎤, and 8x10 atoms/㎤, respectively. It was found that the nMOS with phosphorus junction shows improved electrical characteristics. The improved performance is mainly due to the reduction of electric field which decreases hot carriers.
洪奉植,朴鏞寬 大田工業高等專門學校 1969 論文集 Vol.4 No.-
This paper discussed about the automatic voltage regulator by the method of feedback control system. The regulator containing 3 tubes 6Y6, 6SJ7 and VR-105, and the feedback network, consisting of R_1, R_2, and R_v, determines operating condition of 6SJ7, and then 6Y6, so that the output keeps up 220V, whatever the input voltage is between 290V and 370V.