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Bending Strength of Textured Alumina Prepared by Slip Casting in a Strong Magnetic Field
Suzuki Tohru S.,Uchikoshi Tetsuo,Morita Koji,Hirage Keijiro,Sakka Yoshio 한국분말야금학회 2006 한국분말야금학회 학술대회논문집 Vol.2006 No.1
The mechanical properties of ceramics materials can be tailored by designing their microstructures. We have reported that development of texture can be controlled by slip casting in a strong magnetic field followed by heating even for diamagnetic ceramics such as alumina. A strong magnetic field of 12T was applied to the suspension indcuding alumina powder to rotate each particle during slip casting. The sintering was conducted at the desired temperature in air without a magnetic field. C-axis of alumina was parallel to the magnetic field. Bending strength of textured alumina depended on the direction of oriented microstructure.
Sakka Yoshio,Saito Sho,Honda Atsushi,Suzuki Tohru S.,Moriyoshi Yusuke 한국분말야금학회 2006 한국분말야금학회 학술대회논문집 Vol.2006 No.1
We have demonstrated that textured nanocomposites can be fabricated by slip casting followed by partial oxidation. reaction sintering of mixed suspensions of and SiC powders in a high magnetic field. The sintered density was changed by the degree of oxidation at 1200C and 1300C. The degree of orientation of alumina in the nanocomposite was examined on the basis of the X-ray diffraction patterns and scanning electron micrographs. It is confirmed that aluminaoriented nanocomposites were fabricated. The three-point bending strength at room temperature was observed for the nanocomposites.
Fabrication of Alumina Free-standing Objects by Electrophoretic Deposition
Uchikoshi Tetsuo,Furumi Seiichi,Suzuki Tohru S.,Sakka Yoshio 한국분말야금학회 2006 한국분말야금학회 학술대회논문집 Vol.2006 No.1
The coating of conductive polypyrrole (Ppy) on nonconductive ceramic substrates was performed by polymerization of pyrrole (Py) in an aqueous solution. The Ppy film was characterized by scanning electron microscopy and conductivity measurements. Electrophoretic deposition of bimodal alumina suspension prepared with a phosphate ester was performed using Ppy film as a cathode. Fabrication of alumina ceramics with irregular shapes or complicated patterns were also attempted by sintering the deposits together with the Ppy coated substrates in air.
Sulphur dioxide plasma modification on poly(methyl methacrylate) for fluidic devices
Atsunori Hiratsuka,Hiroyuki Fukui,Yoshio Suzuki,Hitoshi Muguruma,Koji Sakairi,Toshiyuki Matsushima,Yuji Maruo,Kenji Yokoyama 한국물리학회 2008 Current Applied Physics Vol.8 No.2
We developed a sulphur dioxide plasma modication on a poly(methyl methacrylate) (PMMA) material for uidic electrophoresisdevices. The inner surface of the PMMA channel of a chip was modied by using sulphur dioxide plasma treatment. Contact angle mea-surements indicated that the buer solutions were able to ll the capillary because of the hydrophilic property of the internal surface ofthe chip. XPS analysis indicated that the sulphur dioxide plasma treatment introduced a negative charge originating from the dissoci-ation of the hydrogen atoms of sulphonic groups. Since this introduced a negative charge originating from strong acid sulphonic groupsonto the surface of the channel, the electroosmotic ow (EOF) was observed to be large (~7×10-⁴m²V-¹ s-¹) and stable over a widerange of pH (410). The chip was fabricated by using plastic injection moulding methods for enabling the mass fabrication and dispos-able use of chips. The separation method is based on the net electric charge of the material, which enables the separation of identicalsamples on the basis of both isoelectric points and molecular weight. Two synthetic peptides with similar isoelectric points and molecularweights but dierent net charges were selected as model protein samples for the separation. The sample peptides were detected underuorescence microscopy. The resulting electropherograms obtained by using the sulphur dioxide plasma-treated PMMA chip demon-strated that the two peptides were separated and that the migration time of the peptides was correlated with the net charge.
Relation between N–H complexes and electrical properties of GaAsN determined by H implantation
Jong-Han Lee,Hidetoshi Suzuki,Xiuxun Han,Katahiko Honda,Tomohiro Tanaka,Jong-Ha Hwang,Boussairi Bouzazi,Makoto Inagaki,Nobuaki Kojima,Yoshio Ohshita,Masafumi Yamaguchi 한국물리학회 2010 Current Applied Physics Vol.10 No.3
We investigated the relation between N–H complexes and the electrical properties of GaAsN, which is a potential material for fabricating super-high-efficiency multi-junction tandem solar cells. In order to separate the effect of other residual carrier such as carbon in a GaAsN film on the electrical properties, hydrogen (H) ions were implanted into GaAsN grown by chemical beam epitaxy (CBE) and then rapid thermal annealing from 250 to 650 ℃ was carried out. Two N–H complexes related to local vibrational modes (LVMs) in GaAsN were observed at 3098 and 3125 cm-1. With an increasing annealing temperature,the integrated peak intensity of the 3098 cm-1 peak (I3098) decreased, while that of the 3125 cm-1 peak (I3125) increased. This indicates that N–H complexes related to the 3125 cm-1 peak are thermally more stable than those related to the other peak. The hole concentrations and mobilities exhibited an increasing trend until an annealing temperature of 550 ℃ was reached. Their increases are attributed to the removal of donor-type defects. It is suggested that the N–H complexes related to the 3098 cm-1 peak are electrically active, while those giving the 3125 cm-1 peak are inactive.