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Kim, Kyunghun,An, Tae Kyu,Kim, Jiye,Jeong, Yong Jin,Jang, Jaeyoung,Kim, Haekyung,Baek, Jang Yeol,Kim, Yun-Hi,Kim, Se Hyun,Park, Chan Eon American Chemical Society 2014 Chemistry of materials Vol.26 No.22
<P>With the goal of achieving high-performance electrically stable organic field-effect transistors (OFETs), we chemically graft a fluorinated polymer nanolayer onto the polar oxide dielectric surfaces via a simple and easy fabrication process in ambient air. The para-fluorine-thiol click reaction between poly(pentafluorostyrene) (PFS) and mercaptopropyltrimethoxysilane is used to synthesize a graftable fluorinated polymer (gPFS). The surface characteristics of the gPFS-treated SiO<SUB>2</SUB> dielectrics and the crystal structure and grain growth of the overlying organic semiconductors are investigated. Various semiconductor materials are employed for the OFETs prepared with gPFS-treated SiO<SUB>2</SUB> dielectrics, including vacuum-processed pentacene, <I>N</I>,<I>N</I>-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide, solution-processed 5,11-bis(triethylsilylethynyl)anthradithiophene, and poly[2,5-bis(2-octyldodecyl)pyrrolo[3,4-<I>c</I>]pyrrole-1,4(2<I>H</I>,5<I>H</I>)-dione-(<I>E</I>)-1,2-di(2,2′-bithiophen-5-yl)ethane. Three OFETs are prepared with different dielectrics: (i) bare SiO<SUB>2</SUB>, (ii) gPFS-treated SiO<SUB>2</SUB>, and (iii) perfluorooctyltriethoxysilane-treated SiO<SUB>2</SUB>. The OFETs prepared with the gPFS-treated SiO<SUB>2</SUB> dielectrics display the highest mobilities and smallest hysteresis. Furthermore, the gPFS-treated SiO<SUB>2</SUB> provides the best device stability under a sustained gate bias, suggesting that the gPFS surface minimize the number of traps present in the OFET.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/cmatex/2014/cmatex.2014.26.issue-22/cm5030266/production/images/medium/cm-2014-030266_0011.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/cm5030266'>ACS Electronic Supporting Info</A></P>
IoT기반의 지능형 농업서비스를 위한 농업ICT 융합 모델
곽경훈 ( Kyunghun Kwak ),김홍근 ( Hong-geun Kim ),조경룡 ( Kyongryong Cho ),박장우 ( Jang Woo Park ),조용윤 ( Yongyun Cho ) 한국정보처리학회 2015 한국정보처리학회 학술대회논문집 Vol.22 No.1
최근, IT기술과의 융합은 전 산업 분야에서 활발히 적용되고 있으며, 기후 및 환경변화와 식품 안전에 대한 관심의 증대와 함께, 농축수산업 분야에서의 ICT융합 연구 시도가 크게 증가하고 있다. 특히, 농업환경에서의 생산성 향상 및 식품 안전성 확보를 위해 다양한 형태의 상황정보 기반 연구와 센서 네트워크를 활용한 지능형 서비스 제공 기술 연구가 활발히 진행되고 있다. 본 논문에서는 다양한 장비 및 센서가 컴퓨팅 장비와의 네트워킹을 통해 식물공장 및 유리온실과 같은 시설농업환경에서 지능형 농업서비스를 제공하기 위한 농업ICT 융합 모델을 제안한다. 제안하는 서비스 융합모델은 센서를 통해 획득한 다양한 상태정보를 인식하기 위해 상황정보 모델과, 이를 장비와 센서간에 공유된 지식으로 표현하고 활용하기 위한 온톨로지 모델을 사용한다. 제안하는 서비스 융합 모델은 농업ICT 융합 환경에서의 IoT기반 지능형 서비스를 위한 향후 관련 연구에 도움을 줄 것으로 기대한다.
Kim, Lae Ho,Jang, Jin Hyuk,Jeong, Yong Jin,Kim, Kyunghun,Baek, Yonghwa,Kwon, Hyeok-jin,An, Tae Kyu,Nam, Sooji,Kim, Se Hyun,Jang, Jaeyoung,Park, Chan Eon Elsevier 2017 Organic Electronics Vol.50 No.-
<P><B>Abstract</B></P> <P>Polymer substrates are essential components of flexible electronic applications such as OTFTs, OPVs, and OLEDs. However, high water vapor permeability of polymer films can significantly reduce the lifetime of flexible electronic devices. In this study, we examined the water vapor permeation barrier properties of Al<SUB>2</SUB>O<SUB>3</SUB>/HfO<SUB>2</SUB> mixed oxide films on polymer substrates. Al<SUB>2</SUB>O<SUB>3</SUB>/HfO<SUB>2</SUB> films deposited by plasma-enhanced atomic layer deposition were transparent, chemically stable in water and densely amorphous. At 60 °C and 90% relative humidity (RH) accelerated condition, 50-nm-thick Al<SUB>2</SUB>O<SUB>3</SUB>/HfO<SUB>2</SUB> had water vapor transmission rate (WVTR) = 1.44 × 10<SUP>−4</SUP> g m<SUP>−2</SUP> d<SUP>−1</SUP>, whereas single layers of Al<SUB>2</SUB>O<SUB>3</SUB> had WVTR = 3.26 × 10<SUP>−4</SUP> g m<SUP>−2</SUP> d<SUP>−1</SUP> and of HfO<SUB>2</SUB> had WVTR = 6.75 × 10<SUP>−2</SUP> g m<SUP>−2</SUP> d<SUP>−1</SUP>. At 25 °C and 40% RH, 50-nm-thick Al<SUB>2</SUB>O<SUB>3</SUB>/HfO<SUB>2</SUB> film had WVTR = 2.63 × 10<SUP>−6</SUP> g m<SUP>−2</SUP> d<SUP>−1</SUP>, which is comparable to WVTR of conventional glass encapsulation.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Al<SUB>2</SUB>O<SUB>3</SUB>, HfO<SUB>2</SUB>, and Al<SUB>2</SUB>O<SUB>3</SUB>/HfO<SUB>2</SUB> mixed oxide films were deposited by plasma-enhanced atomic layer deposition (PEALD). </LI> <LI> Al<SUB>2</SUB>O<SUB>3</SUB>/HfO<SUB>2</SUB> mixed oxide films were prepared by alternating deposition of Al<SUB>2</SUB>O<SUB>3</SUB> and HfO<SUB>2</SUB> (one layer of each per cycle). </LI> <LI> Al<SUB>2</SUB>O<SUB>3</SUB>/HfO<SUB>2</SUB> mixed oxide films had densely-packed amorphous structure due to Al<SUB>2</SUB>O<SUB>3</SUB> and high chemical stability due to HfO<SUB>2</SUB>. </LI> <LI> All Al<SUB>2</SUB>O<SUB>3</SUB>/HfO<SUB>2</SUB> mixed oxide films were less permeable to moisture than were single Al<SUB>2</SUB>O<SUB>3</SUB> or HfO<SUB>2</SUB> films. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Park, Beomjin,Kim, Kyunghun,Park, Jaesung,Lim, Heeseon,Lanh, Phung Thi,Jang, A-Rang,Hyun, Chohee,Myung, Chang Woo,Park, Seungkyoo,Kim, Jeong Won,Kim, Kwang S.,Shin, Hyeon Suk,Lee, Geunsik,Kim, Se Hyun American Chemical Society 2017 ACS APPLIED MATERIALS & INTERFACES Vol.9 No.33
<P>Organic crystals deposited on 2-dimensional (2D) van der Waals substrates have been widely investigated due to their unprecedented crystal structures and electrical properties. van der Waals interaction between organic molecules and the substrate induces epitaxial growth of high quality organic crystals and their anomalous crystal morphologies. Here, we report on unique ambipolar charge transport of a 'lying-down' pentacene crystal grown on a 2D hexagonal boron nitride van der Waals substrate. From in-depth analysis on crystal growth behavior and ultraviolet photoemission spectroscopy measurement, it is revealed that the pentacene crystal at the initial growth stage have a lattice-strained packing structure and unique energy band structure with a deep highest occupied molecular orbital level compared to conventional 'standing-up' crystals. The lattice-strained pentacene few layers enable ambipolar charge transport in field-effect transistors with balanced hole and electron field-effect mobilities. Complementary logic circuits composed of the two identical transistors show clear inverting functionality with a high gain up to 15. The interesting crystal morphology of organic crystals on van der Waals substrates is expected to attract broad attentions on organic/2D interfaces for their electronic applications.</P>