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RISS 인기검색어
- 검색키워드
- 저자 : ( Maneesha Gupta ) (검색결과 4 건)
- 무료
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- 유료
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The Design of the IIR Differintegrator and its Application in Edge Detection
( Madhu Jain ),( Maneesha Gupta ),( N K Jain ) 한국정보처리학회 2014 Journal of information processing systems Vol.10 No.2
New IIR digital differintegrators (differentiator and integrator) with very minor absolute relative errors are presented in this paper. The digital integrator is designed by interpolating some of the existing integrators. The optimum value of the interpolation ratio is obtained through linear programming optimization. Subsequently, by modifying the transfer function of the proposed integrator appropriately, new digital differentiator is obtained. Simulation results demonstrate that the proposed differintegrator are a more accurate approximation of ideal ones, than the existing differintegrators. Furthermore, the proposed differentiator has been tested in an image processing application. Edges characterize boundaries and are, therefore, a problem of fundamental importance in image processing. For comparison purpose Prewitt, Sobel, Roberts, Canny, Laplacian of Gaussian (LOG), Zerocross operators were used and their results are displayed. The results of edge detection by some of the existing differentiators are also provided. The simulation results have shown the superiority of the proposed approach over existing ones.
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The Design of the IIR Differintegrator and its Application in Edge Detection
Jain, Madhu,Gupta, Maneesha,Jain, N.K. Korea Information Processing Society 2014 Journal of information processing systems Vol.10 No.2
New IIR digital differintegrators (differentiator and integrator) with very minor absolute relative errors are presented in this paper. The digital integrator is designed by interpolating some of the existing integrators. The optimum value of the interpolation ratio is obtained through linear programming optimization. Subsequently, by modifying the transfer function of the proposed integrator appropriately, new digital differentiator is obtained. Simulation results demonstrate that the proposed differintegrator are a more accurate approximation of ideal ones, than the existing differintegrators. Furthermore, the proposed differentiator has been tested in an image processing application. Edges characterize boundaries and are, therefore, a problem of fundamental importance in image processing. For comparison purpose Prewitt, Sobel, Roberts, Canny, Laplacian of Gaussian (LOG), Zerocross operators were used and their results are displayed. The results of edge detection by some of the existing differentiators are also provided. The simulation results have shown the superiority of the proposed approach over existing ones.
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Prateek Kumar,Maneesha Gupta,Kunwar Singh,Naveen Kumar 한국전기전자재료학회 2022 Transactions on Electrical and Electronic Material Vol.23 No.2
Continuous failure of Metal oxide semiconductor field-effect transistors due to short channel effects has motivated researchers to find novel devices like tunnel field-effect transistors and junctionless transistors. The impractical nature of the analysed devices showed that the metal oxide semiconductor field-effect transistor is still the backbone of the industry. In this manuscript, a single transistor-based AND gate is analysed. For designing the gate, a split-gate metal oxide semiconductor field-effect-transistor is used. Due to the physical limitations of Silicon, MoTe2 is considered as the substrate material. To consider all the quantum effects, the Non-equilibrium Green’s function is used to solve the device behavior. The split-gate acts as the input for the designed AND logic structure. For state ‘01’ and ‘10’, different device properties are studied andit is shown that proper conduction does not take place when either of the gates is in OFF-state. For state ‘11’, the analysed device operates as conventional MOSFET, and the drain current–gate voltage characteristics are studied. To investigate the device thoroughly, the effect of parameter variation on device characteristics is examined. The device behavior as an AND gate is confi rmed by checking the linearity parameters. It is found that the device can be used as an AND gate with low noise and power dissipation.
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Prateek Kumar,Maneesha Gupta,Gaurav Kr,Naveen Kumar,Vishal Yadav 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.4
At nanoscale along with the failure of Metal oxide semiconductor field-effect transistor due to short channel effects, Silicon has raised as another bottleneck for researchers. In the last couple of decades, researchers have provided diff erent solutions in the form of Graphene and Transition Metal Dichalcogenides materials. Each Graphene and Transition Metal Dichalcogenides has its own set of disadvantages like poor I ON /I OFF ratio and lower carrier mobility and hence cannot be used individually. In this article, a tub type metal oxide semiconductor field-effect transistor is designed and for application of the device in a low power VLSI domain, the back-gated technique is used. Different device properties are studied first with a Silicon-based channel and then a Silicon-Tungsten Disulphide heterojunction channel. The selection of SiO2 as a gate insulator and contact material is also justified. This article shows that instead of using conventional Silicon-based devices it is better to use heterojunction devices, as they offer much lower OFF-state current and better linearity properties.
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