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( A. S. Berdinsky ),( D. Fink ),( Hui Gon Chun ),( Yong Zoo Yoo ),( Ji Beom Yoo ),( A. V. Petrov ),( P. S. Alegaonkar ) 한국센서학회 2004 센서학회지 Vol.13 No.5
N/A It is known that the conductivity of fullerite depends on the applied pressure. In this paper we compare the variation of conductivity of three different fullerite structure with pressure. We examined C_(60) powder, filled into thin glass capillaries and also studied fullerite nanotubules produced within etched swift heavy ion tracks in polymer foils. These investigations are compared with the results of planar Si-C_(60)-Au structures.
( A. S. Berdinsky ),( Yu. V. Shevtsov ),( Hui Gon Chun ),( Yong Zoo Yoo ),( D. Fink ),( B. M. Ayupov ) 한국센서학회 2004 센서학회지 Vol.13 No.5
N/A We report on the technology of formation of sandwich structures based on fullerite films and on experimental results in research of optical and conductivity properties of these sandwich samples. Single crystals of sapphire (100) or silicon were used as substrates. The sandwich specimens were based on the structure M/C_(60)/M (M=Cr, Pd, Ag, Al, Cu). The thickness of the fullerite films was about 0.2~1.0 μm. The area of the C50 film under the top contact was about I cm². The specimens have been investigated by infrared spectroscopy, spectra-photometry. ellipsometry and X-ray diffraction analysis. Measurements of the current/voltage characteristics and research on the temperature dependence of conductivity were performed as well. It was shown that metals such as Cr, Pd. Ag. Al, and Cu penetrate easily into the fullerite films. It appears that these specimens have a large conductivity. For silver/C_(60) and other sandwich structures the conductivities show a semiconductor-like behaviour.
( Jae Hee Han ),( Jae Hong Park ),( A. S. Berdinsky ),( P. S. Alegaonkar ),( Ji Beom Yoo ),( Hae Jin Kim ),( Jin Joo Choi ),( Joong Woo Nam ),( Chun Kyu Lee ) 대한금속재료학회 ( 구 대한금속학회 ) 2006 ELECTRONIC MATERIALS LETTERS Vol.2 No.2
The field emission (FE) properties of carbon nanotube (CNT) paste on a cathode with a curved surface are reported in terms of its application in a traveling wave tube-microwave power amplifier (TWT-MPA). Initially, a stable and uniform emission current from the activated CNT paste emitter was obtained, during multiple trial of FE cycling (>80 mA/㎠ at 3.5 V/㎛). In addition, the effective electrical aging conditions (aging time and current) were investigated in an attempt to improve the emission reliability of the CNT emitters. After electrical aging, a gridded CNT cathode structure was fabricated, and the diode FE characteristics with the common ground configurations in anode and gate were investigated.
Influence of Axial Mechanical Stress on the Xonductivity of Fullerite Powder
A.S.Berdinsky,D.Fink,천희곤,L.T.Chadderton 한국센서학회 2004 센서학회지 Vol.13 No.4
The possibility to use powder consisting of fullerite microcrystallines as a device sensitive to the external axialmechanical load is considered. We suppose that the change of conductivity of fullerite microcrystalline powder as afunction of external mechanical stress will be useful for the creation of nanoscale devices of sensor electronics. This neweffect based on changing of intermolecular distance between fullerene molecules due to the action of external mechanicalforce, which can change the distance between fulerene molecules because of weak van der Waals interaction exists. Thefounded effect is quite linear and sensitive to external mechanical stress is better then in well-known pressure transducersis based on silicon technology.
Gas-Phase Technology and Microstructure of Fullerite Films
A.S. Berdinsky,Hui-Gon Chun,Jing-Hyuk Lee,Yong-Hwa Song,Yu. V. Shevtsov 한국표면공학회 2004 한국표면공학회지 Vol.37 No.2
The technology of C?? fullerite films preparation by means of gas-phase deposition and structure of fullerite films are described. A three-channel flow plant was used to obtain fullerite films. The films were deposited in the flow of inert gas under reduced pressure onto a cooled silicon or sapphire substrate placed inside the reaction chamber of the plant. The plant allows one to obtain the films of pure fullerenes and to synthesise the films from fullerene compounds and doped fullerenes. The structure of two types of films were investigated by FE-SEM and SEM techniques: pure fullerite films onto silicon and sapphire substrates as well as compound films were studied by FE-SEM technique. All samples have shown columnar structure with high level of porosity. The synthesis of films composed of fullerene and its compounds for use in electronics is demonstrated to be promising. For example, experiments confirm the possibility to use fullerite films in sensor electronics to produce humidity and thermal sensors. It is also possible to use the sensitivity of these films to isotropic pressure. The experiments with C??-Cu-J films have shown quite strong dependence of their resistance on pressure of different sort of medium-gas that could be used in gas-sensitive sensors. The structure and preparation technology of resistive sensor based on fullerite films are described.
GROWTH OF CARBON NANOTUBES IN ETCHED ION TRACKS IN SILICON OXIDE ON SILICON
J. S. JUNG,L. T. CHADDERTON,A. S. BERDINSKY,P. S. ALEGAONKAR,H. C. LEE,J. H. HAN,J. B. YOO,D. FINK 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2007 NANO Vol.2 No.1
Carbon nanotubes (CNTs) were selectively grown in etched ion tracks in SiO2 layers on Si. For this sake, Ni-catalyst nanocrystals were initially deposited within the ion tracks by galvanic deposition. The characteristics of plasma-enhanced chemical vapor deposition (PECVD)- and thermal chemical vapor deposition (TCVD)-grown CNTs, such as structural details and length distribution, were investigated. In addition, field emission properties were studied. The analysis revealed that the emerging PECVD-grown CNTs were of cylindrical and/or conical shape and usually had diameters as large as the etched tracks. The exponential length distribution of these CNTs can be well understood by applying a simple defect-growth model. For contrast, many narrow and curled CNTs were found to cluster in spots well separated from each other, after applying TCVD instead of PECVD. The Raman investigations of PECVD-grown CNTs showed that Si–O–C and Si–C phases had formed during the growth of the CNTs. These ion-track-correlated PECVD-grown CNTs open the way for the production of novel 3D nanoelectronic devices based on the TEMPOS concept. These structures are also excellent candidates for experiments on channeling in CNTs. Application as field emitting devices, however, appears unfavorable due to poor mean-field enhancement factors and insufficient stability.