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Zhenjie Tang,Dongqiu Zhao,Rong Li,Xinhua Zhu 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.1
Charge trapping nonvolatile memory capacitors with ZrO2 as charge trapping layer were fabricated, and the effectsof post annealing atmosphere (NH3 and N2) on their memory storage characteristics were investigated. It was foundthat the memory windows were improved, after annealing treatment. The memory capacitor after NH3 annealingtreatment exhibited the best electrical characteristics, with a 6.8 V memory window, a lower charge loss ~22.3% up toten years, even at 150℃, and excellent endurance (1.5% memory window degradation). The results are attributed todeep level bulk charge traps, induced by using NH3 annealing.
Zhenjie Tang,Jing Zhang,Yunhong Jiang,Guixia Wang,Rong Li,Xinhua Zhu 한국전기전자재료학회 2015 Transactions on Electrical and Electronic Material Vol.16 No.3
This research proposes the use of a composition modulated (ZrO2)x(Al2O3)1-x film as a charge trapping layer for charge trap flash memory; this is possible when the Zr (Al) atomic percent is controlled to form a variable bandgap as identified by the valence band offsets and electron energy loss spectrum measurements. Compared to memory devices with uniform compositional (ZrO2)0.1(Al2O3)0.9 or a (ZrO2)0.92(Al2O3)0.08 trapping layer, the memory device using the composition modulated (ZrO2)x(Al2O3)1-x as the charge trapping layer exhibits a larger memory window (6.0 V) at the gate sweeping voltage of ±8 V, improved data retention, and significantly faster program/erase speed. Improvements of the memory characteristics are attributed to the special energy band alignments resulting from non-uniform distribution of elemental composition. These results indicate that the composition modulated (ZrO2) x(Al2O3)1-x film is a promising candidate for future nonvolatile memory device applications.
Effect of Annealing Atmosphere on the La2O3 Nanocrystallite Based Charge Trap Memory
Zhenjie Tang,Dongqiu Zhao,Huiping Hu,Rong Li,Jiang Yin 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.2
Pt/Al2O3/La2Si5Ox/SiO2/Si charge trap memory capacitors were prepared, in which the La2Si5Ox film was used as thecharge trapping layer, and the effects of post annealing atmospheres (NH3 and N2) on their memory characteristicswere investigated. La2O3 nanocrystallites, as the storage nodes, precipitated from the amorphous La2Si5Ox film duringrapid thermal annealing. The NH3 annealed memory capacitor showed higher charge storage performances thaneither the capacitor without annealing or the capacitor annealed in N2. The memory characteristics were enhancedbecause more nitrogen was incorporated at the La2Si5Ox/SiO2 interface and interfacial reaction was suppressed afterthe NH3 annealing treatment.
Zhenjie Zhuang,Qianying Chen,Xiaoying Zhong,Huiqi Chen,Runjia Yu,Ying Tang The Korean Society of Ginseng 2023 Journal of Ginseng Research Vol.47 No.2
Introduction: Non-small cell lung cancer (NSCLC) patients are particularly vulnerable to the Coronavirus Disease-2019 (COVID-19). Currently, no anti-NSCLC/COVID-19 treatment options are available. As ginsenoside Rg3 is beneficial to NSCLC patients and has been identified as an entry inhibitor of the virus, this study aims to explore underlying pharmacological mechanisms of ginsenoside Rg3 for the treatment of NSCLC patients with COVID-19. Methods: Based on a large-scale data mining and systemic biological analysis, this study investigated target genes, biological processes, pharmacological mechanisms, and underlying immune implications of ginsenoside Rg3 for NSCLC patients with COVID-19. Results: An important gene set containing 26 target genes was built. Target genes with significant prognostic value were identified, including baculoviral IAP repeat containing 5 (BIRC5), carbonic anhydrase 9 (CA9), endothelin receptor type B (EDNRB), glucagon receptor (GCGR), interleukin 2 (IL2), peptidyl arginine deiminase 4 (PADI4), and solute carrier organic anion transporter family member 1B1 (SLCO1B1). The expression of target genes was significantly correlated with the infiltration level of macrophages, eosinophils, natural killer cells, and T lymphocytes. Ginsenoside Rg3 may benefit NSCLC patients with COVID-19 by regulating signaling pathways primarily involved in anti-inflammation, immunomodulation, cell cycle, cell fate, carcinogenesis, and hemodynamics. Conclusions: This study provided a comprehensive strategy for drug discovery in NSCLC and COVID-19 based on systemic biology approaches. Ginsenoside Rg3 may be a prospective drug for NSCLC patients with COVID-19. Future studies are needed to determine the value of ginsenoside Rg3 for NSCLC patients with COVID-19.
Progress of High-k Dielectrics Applicable to SONOS-Type Nonvolatile Semiconductor Memories
Zhenjie Tang,Zhiguo Liu,Xinhua Zhu 한국전기전자재료학회 2010 Transactions on Electrical and Electronic Material Vol.11 No.4
As a promising candidate to replace the conventional floating gate flash memories, polysilicon-oxide-nitride-oxidesilicon (SONOS)-type nonvolatile semiconductor memories have been investigated widely in the past several years. SONOS-type memories have some advantages over the conventional floating gate flash memories, such as lower operating voltage, excellent endurance and compatibility with standard complementary metal-oxide-semiconductor (CMOS) technology. However, their operating speed and date retention characteristics are still the bottlenecks to limit the applications of SONOS-type memories. Recently, various approaches have been used to make a trade-off between the operating speed and the date retention characteristics. Application of high-k dielectrics to SONOS-type memories is a predominant route. This article provides the state-of-the-art research progress of high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories. It begins with a short description of working mechanism of SONOS-type memories, and then deals with the material ’ requirements of high-k dielectrics used for SONOS-type memories. In the following section, the microstructures of high-k dielectrics used as tunneling layers, charge trapping layers and blocking layers in SONOS-type memories, and their impacts on the memory behaviors are critically reviewed. The improvement of the memory characteristics by using multilayered structures, including multilayered tunneling layer or multilayered charge trapping layer are also discussed. Finally, this review is concluded with our perspectives towards the future researches on the high-k dielectrics applicable to SONOS-type nonvolatile semiconductor memories.
Zhenjie Tang,Ma Dongwei,Zhang Jing,Jiang Yunhong,Wang Guixia,Zhao Dongqiu,Rong Li,Jiang Yin 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.5
Charge trap flash memory capacitors incorporating (HfO2)x(Al2O3)1-x film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found thatthe memory window and charge retention performance can be improved by adding Al atoms into pure HfO2; further,the memory capacitor with a (HfO2)0.9(Al2O3)0.1 charge trapping layer exhibits optimized memory characteristicseven at high temperatures. The results should be attributed to the large band offsets and minimum trap energylevels. Therefore, the (HfO2)0.9(Al2O3)0.1 charge trapping layer may be useful in future nonvolatile flash memory deviceapplication.
Zhenjie Li,Xuezhi Yang,Jun Ma,Mingfei Ban,Yiqi Liu 전력전자학회 2024 JOURNAL OF POWER ELECTRONICS Vol.24 No.3
This paper proposes a main-auxiliary cooperative receiving coil (MA-coil) with a lower space occupation rate and a simple control based on the time-sharing working principle, which can effectively improve the anti-misalignment capability of a dynamic wireless charging (DWC) system. First, the structure and circuit topology of the MA-coil are designed. The two auxiliary coils (A-coil) are connected in reverse series and symmetrically placed on both sides of the main coil (M-coil). Second, the output performance of the MA-coil in the y-direction is calculated based on the time-sharing working principle. The A-coil works by itself and enhances the output power when side shift occurs. Third, the most suitable ratio of coil width w M and w A is determined. The anti-misalignment performance and the effective side shift range are compared through simulation between the MA-coil in this case and the square coil. Finally, an experimental prototype is built to verify the feasibility of the proposed structure, and experimental results obtained from the prototype are basically consistent with the theoretical analysis. The anti-misalignment capability of the MA-coil is more than 20% higher than that of the square coil.
Study on the Matching Algorithm and 3D Virtual Reality System Based on SilverLight
Hou Zhenjie,Lu Zhongqiu,Yuan Dezheng 보안공학연구지원센터 2016 International Journal of Hybrid Information Techno Vol.9 No.1
Silverlight technology is a new generation of rich internet application technology. The paper proposes a new solution based on the Silverlight technology to achieve a 3D virtual reality system which takes the pictures around the objects with 360 degree displaying in the local computer or a web page. The 3D visual sense and image matching of this system are the key technical problems. The automatic matching technology in image synthesis field plays a very important role in the system. Based on the SURF algorithm, this paper takes strategies of density threshold suppression to reduce the number of matched feature points; using the quasi Euclidean distance to complete the feature points matching process, the improved algorithm also greatly reduces the matching time of feature points and improves the matching accuracy. Through theoretical analysis and experimental contrast, demonstrates the reliability and validity of the algorithm.