http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Kawan Faiq Ahmed,Asaad Mubdir Jassim Al-Hindawi 한국인터넷정보학회 2023 KSII Transactions on Internet and Information Syst Vol.17 No.12
This work designs an eighteen-channel bidirectional Intensity Modulation with Direct Detection (IM/DD) Wavelength Division Multiplexing-Passive Optical Network (WDM-PON) system. The proposed system meets the requirement of the ITU-T 5G fronthaul link suggested design in G-series Recommendations-Supplement 66. The newly designed system, with a 25Gb/s/λ data rate (450Gbps as a system capacity), has been tested and simulated using OptiSystem V.19 software. The system has been evaluated by the BER with respect to variable the optical span and CW laser power. Based on the ITU-T recommendations, the simulation results demonstrate that this system might be used as an F1 and as an Fx 5G fronthaul link for functional split choices starting from options 1 to 7a. These options are required under 25Gbps/λ for each upstream and downstream link direction. Furthermore, the proposed system utilized a bidirectional single-mode optical fiber within short optical spans of up to 10 km. The proposed system is characterized by a low-cost, simple, DSP-free and amplifier-free system with a reasonable system capacity.
Kawan, Anil,Yu, Soon-Jae,Sung, Jun-Ho The Korean Institute of Electrical and Electronic 2018 Transactions on Electrical and Electronic Material Vol.19 No.3
The objective of this study was to develop a fabrication process to realize feasible n-type GaN thinning on a 365-nm flip chip ultraviolet LED for enhancement of light output power. The fabrication process included isolation trench filling using epoxy-based SU-8 photoresist, aligned wafer bonding, and sapphire laser lift-off techniques. Study of laser lift-off process for successful transfer of the flip chip LED GaN epilayers to the carrier wafer using different SU-8 trench filling methods are in progress. The first method of SU-8 trench filling was implemented on a flip chip LED wafer with chip isolation defined up to n-type GaN, whereas the second method of SU-8 trench filling was implemented on a flip chip LED wafer with chip isolation defined down to the sapphire substrate. SU-8 2 and SU-8 2025 series were used for the first and second trench filling methods, respectively. In addition to SU-8 trench filling, the second method comprised Cu electroplating and planarization polishing.
Fabrication of Geometric Sapphire Shaped InGaN/Al2O3 (S) LED Scribed by Using Wet Chemical Etching
Anil Kawan,S. J. Yu,Hwa Jin Park,Ju-Ok Seo,Seok-Beom Yoon 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.4
The wet chemical etching method for etching V-grooves into sapphire substrates is used as scribingtechnique, and a geometric sapphire shaped InGaN/Al2O3 (S) light-emitting diode (LED) chip isfabricated. The V-groove is formed on the backside of a 150-μm-thick sapphire substrate by wetetching in a 3H2SO4:1H3PO4 chemical solution. The fabricated wet scribed geometric sapphireshaped LED exhibits a 15.86% enhancement in the light output power at 60-mA compared tothe laser-stealth-scribed conventional rectangular LED. In addition, a ray-tracing simulation using“Light Tools” is performed on shaped geometric sapphire samples to investigate the enhancementof the light extracted from the substrate. The enhancement of the light output power for the wetscribedgeometric sapphire shaped LED is thought to be due to the elimination of thermal damageand to an increase in light extraction from geometric sapphire shaped structure.
Anil Kawan,Soon-Jae Yu,성준호 한국전기전자재료학회 2018 Transactions on Electrical and Electronic Material Vol.19 No.3
The objective of this study was to develop a fabrication process to realize feasible n-type GaN thinning on a 365-nm fl ipchip ultraviolet LED for enhancement of light output power. The fabrication process included isolation trench fi lling usingepoxy-based SU-8 photoresist, aligned wafer bonding, and sapphire laser lift-off techniques. Study of laser lift-off process forsuccessful transfer of the fl ip chip LED GaN epilayers to the carrier wafer using diff erent SU-8 trench fi lling methods are inprogress. The fi rst method of SU-8 trench fi lling was implemented on a fl ip chip LED wafer with chip isolation defi ned up ton-type GaN, whereas the second method of SU-8 trench fi lling was implemented on a fl ip chip LED wafer with chip isolationdefi ned down to the sapphire substrate. SU-8 2 and SU-8 2025 series were used for the fi rst and second trench fi lling methods,respectively. In addition to SU-8 trench fi lling, the second method comprised Cu electroplating and planarization polishing.
Anil Kawan,유순재 한국전기전자재료학회 2021 Transactions on Electrical and Electronic Material Vol.22 No.2
In this study we report chip fabrication process that allows the laser lift-off of the sapphire substrate for the transfer of the GaN based thin film flip chip to the carrier wafer. The fabrication process includes 365-nm ultraviolet flip chip LED wafer align bonding with through-AlN-via wafer and sapphire laser lift-off . n-holes with the diameter of 100 μm were etched on the GaN epilayers for accessing n-type GaN. Through-AlN-via size was 110-μm and filled by Cu electroplating method for the electrical connection. Mechanical stabilization to prevent the GaN epilayers cracking and fragmentation during laser lift-off was achieved by utilizing epoxy based SU-8 photoresist support.
Comparison between basal and conventional implants as a treatment modality in atrophied ridges
Shakhawan M,Ali,Kawan S,Othman,Abduljaleel A,Samad,Payman Kh,Mahmud 대한치과이식임플란트학회 2019 The Korean Academy of Implant Dentistry Vol.38 No.2
Implant placement in severely atrophic jaws is especially challenging because of the poor quality and quantity of the future implant bed. Although various bone augmentation procedure like ridge augmentation, sinus lift these procedures are possible today but it may lead to surgical morbidity they increase the risks and costs of dental implant treatment as well as the number of necessary operations. Also sometimes the patient is not agreeing for such extensive surgical procedures, according to the well-known implantological rules for dental restorations, crestal implants are indicated in situations when an adequate amount of bone is present but basal implant a viable treatment option derives support from the basal bone area which usually remains free from the infection and less prone to resorption. This article discusses about the review literature of using basal implants and the differences that exist between basal implants and crestal implants in rehabilitation of atrophied edentulous jaws.