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신훈범,안형근,한득영,Shin, Hoon-Beom,Ahn, Hyung-Keun,Han, Deuk-Young 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.9
This paper explains the design and fabrication of an inverter for LCD backlight using a multilayer piezoelectric transformer. That inverter is operated by the burst dimming method whose dimming signal is controlled by the duty ratio of rectangular switching signal to a PWM controller. The brightness of CCFL's are investigated according to the various dimming signals, and when those CCFL's are turned on, the temperature distributions on the piezoelectric transformer and circuit components of the inverter are also investigated by a thermo-camera.
Short Channel GaAs MESFET의 채널전하분포와 채널전하에 의한 전위장벽의 변화
원창섭,이명수,류세환,한득영,안형근,Sub, Won-Chang,Lee, Myung-Soo,Ryu, Se-Hwan,Han, Deuk-Young,Ahn, Hyung-Keun 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.9
In this paper, the gate leakage current is first calculated using the experimental method between gate and drain by opening source electrode. the gate to drain current has been obtained with ground source. The difference between two currents has been tested and proves that the electric field generated by channel charge effect against the image force lowering.
류세환,이호길,안형근,한득영,Ryu, Se-Hwan,Lee, Ho-Kil,Ahn, Hyung-Keun,Han, Deuk-Young 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.1
In this paper, transient characteristics of the Punch Through Insulated Gate Bipolar Transistor (PT-IGBT) have been studied. On the contrary to Non-Punch Through Insulated Gate Bipolar Transistor(NPT-IGBT), it has a buffer layer and reduces switching power loss. It has a simple drive circuit controlled by the gate voltage of the MOSFET and low on-state resistance of the bipolar junction transistor. The transient characteristics of the PT-IGBT have been analyzed analytically. Excess minority carrier and charge distribution in active base region, the rate of anode voltage with time are expressed analytically by adding the influence of buffer layer. The experimental data is obtained from manufacturer. The theoretical predictions of the analysis have been compared with the experimental data obtained from the measurement of a device(600 V, 15 A) and show good agreement.