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습식텍스쳐를 이용한 단결정 실리콘 광학적 · 전기적 특성 연구
한규민(Han Kyu-min),유진수(Yoo Jin-su),유권종(Yoo Kwon-jong),이희덕(Lee Hi-deok),최성진(Choi Sung-jin),권준영(Kwon Jun-young),이준신(Yi Jun-sin) 한국태양에너지학회 2010 한국태양에너지학회 학술대회논문집 Vol.2010 No.4
The presence of ultrasonic wave in caustic cleaning process enhances the remove pollutants, and more homogeneous, textured structure. The silicon wafers, cleaning in Deconex OF 145 solution (0.5~2wt %) with DIW under ultrasonic environment for 5 min. The presence of uniform thin layer of SiO2 on c-Si surface enhances etching rate in the caustic etching mixture solution of NaOH (1.5 wt %), DI water and IPA (6 wt %) at 90℃ for 20 min and results in a fine, more homogeneous and small textured structure.
습식텍스쳐를 이용한 삼결정 실리콘 광학적.전기적 특성 연구
한규민(Han, Kyu-Min),유진수(Yoo, Jin-Su),유권종(Yoo, Kwon-Jong),이희덕(Lee, Hi-Deok),최성진(Choi, Sung-Jin),권준영(Kwon, Jun-Young),김기호(Kim, Ki-Ho),이준신(Yi, Jun-Sin) 한국신재생에너지학회 2009 한국신재생에너지학회 학술대회논문집 Vol.2009 No.06
Two different wet etching solutions, NaOH 40% and Acid, were used for etching in tri-crystalline Silicon(Tri-Si) solar cell fabrication. The wafers etched in NaOH40% solution showed higher reflectance compared to the wafers etched in Acid solution after SiN_x deposition. In light current-voltage results, the cells etched in Acid solution exhibited higher short circuit current and open circuit voltage than those of the cells etched in NaOH 40% solution. We have obtained 16.70% conversion efficiency in large area(156cm²) Tri-Si solar cells etched in Acid solution.
레이저를 이용한 결정질 실리콘 태양전지의 Double Texturing 제조 및 특성
권준영,한규민,최성진,송희은,유진수,유권종,김남수,Kwon, Jun-Young,Han, Kyu-Min,Choi, Sung-Jin,Song, Hee-Eun,Yoo, Jin-Soo,Yoo, Kwon-Jong,Kim, Nam-Soo 한국재료학회 2010 한국재료학회지 Vol.20 No.12
In this paper, double texturization of multi crystalline silicon solar cells was studied with laser and reactive ion etching (RIE). In the case of multi crystalline silicon wafers, chemical etching has problems in producing a uniform surface texture. Thus various etching methods such as laser and dry texturization have been studied for multi crystalline silicon wafers. In this study, laser texturization with an Nd:$YVO_4$ green laser was performed first to get the proper hole spacing and $300{\mu}m$ was found to be the most proper value. Laser texturization on crystalline silicon wafers was followed by damage removal in acid solution and RIE to achieve double texturization. This study showed that double texturization on multi crystalline silicon wafers with laser firing and RIE resulted in lower reflectance, higher quantum yield and better efficiency than that process without RIE. However, RIE formed sharp structures on the silicon wafer surfaces, which resulted in 0.8% decrease of fill factor at solar cell characterization. While chemical etching makes it difficult to obtain a uniform surface texture for multi crystalline silicon solar cells, the process of double texturization with laser and RIE yields a uniform surface structure, diminished reflectance, and improved efficiency. This finding lays the foundation for the study of low-cost, high efficiency multi crystalline silicon solar cells.
이영석(Young-seok Yi),한규민(Kyu-min Han),김경해(Kyung-hae Kim),이준신(Jun-sin Yi) 대한전기학회 2007 대한전기학회 학술대회 논문집 Vol.2007 No.10
높은 효율의 태양전지의 개발은 태양전지 상용화에 꼭 필요한 일이다. 고효율 태양전지 개발을 위해 태양전지 시뮬레이션 프로그램인 PC1D를 이용하여 현재 많이 사용되고 있는 p-n 접합형 실리콘 태양전지의 변환효율에 영향을 주는 요소들, 특히 웨이퍼 표면의 texturing과 doping 농도를 변화시켜 최적의 요건을 찾고자하였다. texture depth = 3㎛, texture angle = 80°, base의 비저항 = 0.1Ω · ㎝, emitter doping 농도 = 5e+18㎝?³ 에서 20.37%의 고효율을 얻을 수 있다.
권준영(Kwon Jun-young),유진수(Yoo Jin-su),유권종(Yoo Kwon-jong),한규민(Han Kyu-min),최성진(Choi Sung-jin),김남수(Kim Nam-su) 한국태양에너지학회 2010 한국태양에너지학회 학술대회논문집 Vol.2010 No.4
This paper, laser edge isolation for crystalline silicon solar cell was tested. Existing methods to plasma etching and wet etching to proceed with the separation process, but the material damage aspect ratio greater problems in the aspects of the laser separation process can reduce a lot of time there can be an inline assembly line, this has the advantage. Nd: YV04 laser were used wavelength 532㎚ reduced by Green laser used. In addition, the shorter the wavelength of the laser thermal effect due to the lower load receives a clean surface was obtained.
PC1D simulation을 이용한 결정질 실리콘 태양전지의 도핑 최적화
최성진(Choi SUNG-Jin),유진수(Yoo Jin-Su),유권종(Yoo Kwon-Jong),한규민(Han Kyu-Min),권준영(Kwon Jun-Young),이희덕(Lee Hi-Deok) 한국태양에너지학회 2010 한국태양에너지학회 학술대회논문집 Vol.2010 No.4
Doping process of crystalline silicon solar cell process is very important which is as influential on efficiency on solar cell. Using PC1D simulator we optimized the solar cell to get the high efficiency, by adjusting doping condition(sheet resistance, concentration of dopant, junction depth). The PC1D simulation's fix condition are area(240㎠), thickness(200㎛), reflectance rate(7%), pyramid size(3㎛), resistance, recombination rate and measurement condition. Efficiency is measured with various sheet resistances. Under the optimized condition, the solar cell showed a high efficiency 18.17%.
단결정 실리콘 태양전지의 도핑 최적화를 위한 확산 온도에 대한 연구
최성진(Choi Sung-Jin),송희은(Song Hee-Eun),유권종(Yoo Kwon-Jong),유진수(Yoo Jin-Soo),한규민(Han Kyu-Min),권준영(Kwon Jun-Young),이희덕(Lee Hi-Deok) 한국태양에너지학회 2011 한국태양에너지학회 논문집 Vol.31 No.1
In this paper, the optimized doping condition of crystalline silicon solar cells with 156 × 156㎟ area was studied. To optimize the drive-in temperature in the doping process, the other conditions except variable drive-in temperature were fixed. These conditions were obtained in previous studies. After etching 7㎛ of the surface to form the pyramidal structure, the silicon nitride deposited by the PECVD had 75∼80㎚ thickness and 2 to 2.1 for a refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were for medby screen-printing method, followed by firing in 400-425-450-550-850℃ five-zone temperature conditions to make the ohmic contact. Drive-in temperature was changed in range of 830℃ to 890℃ to obtain the sheet resistance 30∼70Ω/□ with 10Ω/□ intervals. Solar cell made in 890℃ as the drive-in temperature revealed 17.1% conversion efficiency which is best in this study. This solar cells showed 34.4 ㎃/㎠ of the current density, 627 ㎷ of the open circuit voltage and 79.3% of the fill factor.
결정질 실리콘 태양전지의 도핑 최적화를 위한 선 증착 온도에 대한 연구
최성진(Choi Sung-Jin),송희은(Song Hee-Eun),유권종(Yoo Kwon-Jong),유진수(Yoo Jin-Soo),한규민(Han Kyu-Min),권준영(Kwon Jun-Young),이희덕(Lee Hi-Deok) 한국태양에너지학회 2010 한국태양에너지학회 학술대회논문집 Vol.2010 No.11
In this paper, the optimized doping condition of mono crystalline silicon solar cells with 156 × 156 ㎟ area was studied. To optimize the pre-deposition temperature in the doping process, the other conditions except variable pre-deposition temperature were fixed. These conditions were obtained in previous studies. After etching 7 μm of the surface to form the pyramidal structure, pre-deposition temperature was changed in range of 780 ℃ to 820 ℃ with 10 ℃ increment and drive-in temperature were fixed at 865 ℃. The silicon nitride deposited by the PECVD had 75 nm thickness with 2-2.1 refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in 400-425-450-550-880 ℃ five-zone temperature conditions to make the ohmic contact. Mono crystalline silicon solar cell made in 790 ℃ as the pre-deposition temperature revealed 16.9 % conversion efficiency which was best in this study. This solar cells showed 34.78 ㎃/㎠ of the current density, 629 ㎷ of the open circuit voltage and 77.1 % of the fill factor.
스크린 프린팅을 이용한 결정질 실리콘 태양전지 소성 조건 최적화
권준영(Kwon Jun-Young),송희은(Song Hee-Eun),유권종(Yoo Kwon-Jong),유진수(Yoo Jin-Soo),최성진(Choi Sung-Jin),한규민(Han Kyu-Min),김남수(Kim Nam-Soo) 한국태양에너지학회 2010 한국태양에너지학회 학술대회논문집 Vol.2010 No.11
In this paper, the firing condition among crystalline silicon solar cell fabrication processes was studied. Many studies have been performed to improve the efficiency of crystalline silicon solar cell. Both single and multi crystalline silicon wafers in p-type were used with surface area 156×156 ㎟ and resistance 0.5?2 mΩ. To find the optimized firing condition to fabricate the silicon solar cell, the five-zone belt furnace was used with changing the temperatures of the each zone. As a result, the firing condition for single and multi silicon solar cell was different and found to gain the best conversion efficiency. We achieved the energy conversion efficiencies of 17.3 % and 16.3 % for single and multi crystalline silicon solar cell, respectively.